Abstract:Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method. In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga degrees C.Temperature is the metals at a low growth temperature of 550 d critical experimental parameter for the formation of Ga-dope the ZnO nanowires.This evaporation process can be attributed to Ga dopant In the lattice position of he ZnO nanowires. As shown In scanning electron microscopy (SEM), nanowires of different diameters are evenly arranged on the Si substrate and nucleated via a self-catalysed mechanism by depositing a layer of ZnO film as the crystallization plant before growing ZnO nanowires on the film. Self-catalyzed growth of Ga-doped ZnO nanowires are of diameters 35-150nm and lengths up to several ones of micrometers. High resolution Transmission electron microscope (HRTEM) those lattice image of Ga doped ZnO nanowires, wherein nanowires are seen a lattice of a=3.25 angstrom and c=5.19 angstrom. As determine by selected area diffraction (SAD), the growth direction of Ga-doped ZnO nanowires is [001] and the nanowire consists of single-crystailline ZnO crystals.The luminescence spectra of the Ga-doped ZnO nanowires exhibit a UV band at 374nm and a strong green band at 498nm. In addition, the Ga-doped ZnO nano,wires with different diameters have a larger green light/UV ratio due to the recombination of holes with the electrons occupying the singly ionized more O vacancies that are larger In number. By virue of the doping of Ga, we observe that Ga-doped ZnO nanowires becomes broader and shifts to a longer wave 498nm at a lower energy and a strong green emission as compared to the undoped one in the cathodoluminescence and photoluminescence spectra. The Ga-doped ZnO nanowires; have a greater field-enhancement factor than the undoped ZnO nanowies. The Ga-doped ZnO nanowires with a low turn on field (12V mu m(-1)) are apparently lower than the undoped ZnO nanowires. Our results demonstrate that Ga-doped ZnO nanowires can provide the possibility of application In optoelectric nanodevices.

Surface-diffusion enhanced Ga incorporation in ZnO nanowires by oxygen vacancies

Spontaneous Ga Incorporation in Zno Nanowires Epitaxially Grown on Gan Substrate

First-principles Study of Diffusion of Oxygen Vacancies and Interstitials in ZnO

First-principles Study of the Diffusion of Ga Via Interstitial-Mediated Mechanisms in ZnO

Zn-dopant dependent defect evolution in GaN nanowires

First-principles study of diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO

Characterization of Ga-doped ZnO Nanowires Grown by Thermal Chemical Vapor Deposition

Suppression of Visible Light Emission of Zno Nanostructures by Ga-Doping

Field Emission and Optical Properties of Ga-doped ZnO Nanowires Synthesized Via Thermal Evaporation

Optical and Electrical Properties of Ga-Doped ZnO Nanowire Arrays on Conducting Substrates

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Tunable N‐type Conductivity and Transport Properties of Ga‐doped ZnO Nanowire Arrays

Compensation Mechanism in N-doped ZnO Nanowires

Surface effects on photoluminescence of single ZnO nanowires

Studies on the Synthesis and Growth Mechanism of Single Crystal ZnO Nanowires

Complete replacement of metal in metal oxide nanowires via atomic diffusion: In/ZnO case study.

Manipulating the Quantum Interference Effect and Magnetotransport of ZnO Nanowires Through Interfacial Doping.

Detailed Study on Photoluminescence Property and Growth Mechanism of ZnO Nanowire Arrays Grown by Thermal Evaporation

Vacancy-Assisted Diffusion Mechanism of Group-Iii Elements in Zno: an Ab Initio Study

Photoluminescence of Ga-doped ZnO Nanorods Prepared by Chemical Vapor Deposition

Quantification of the Zinc Dopant Concentration in GaAs Nanowires