Metal–insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

huafu zhang,zhiming wu,ruihua niu,xuefei wu,qiong he,yadong jiang
DOI: https://doi.org/10.1016/j.apsusc.2015.01.013
IF: 6.7
2015-01-01
Applied Surface Science
Abstract:•Si-doped VO2 films were prepared on high-purity single-crystal Si substrates.•The surface morphology and phase transition properties depend on the Si content.•All the films show a high transmission modulation ratio at terahertz range.•Small hysteresis width of 4.5°C and large terahertz modulation ratio of about 82%.
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