Abstract:We study the electronic surface states of the semiconducting alloy BiSb. Using a phenomenological tight binding model we show that the Fermi surface of the 111 surface states encloses an odd number of time reversal invariant momenta (TRIM) in the surface Brillouin zone confirming that the alloy is a strong topological insulator. We then develop general arguments which show that spatial symmetries lead to additional topological structure, and further constrain the surface band structure. Inversion symmetric crystals have 8 Z_2 "parity invariants", which include the 4 Z_2 invariants due to time reversal. The extra invariants determine the "surface fermion parity", which specifies which surface TRIM are enclosed by an odd number of electron or hole pockets. We provide a simple proof of this result, which provides a direct link between the surface states and the bulk parity eigenvalues. We then make specific predictions for the surface state structure for several faces of BiSb. We next show that mirror invariant band structures are characterized by an integer "mirror Chern number", n_M. The sign of n_M in the topological insulator phase of BiSb is related to a previously unexplored Z_2 parameter in the L point k.p theory of pure Bi, which we refer to as the "mirror chirality", \eta. The value of \eta predicted by the tight binding model for Bi disagrees with the value predicted by a more fundamental pseudopotential calculation. This explains a subtle disagreement between our tight binding surface state calculation and previous first principles calculations on Bi. This suggests that the tight binding parameters in the Liu Allen model of Bi need to be reconsidered. Implications for existing and future ARPES experiments and spin polarized ARPES experiments will be discussed.

Surface vs bulk electronic structures of a moderately correlated topological insulator YbB6 revealed by ARPES

Surface and Electronic Structure of Smb6 Through Scanning Tunneling Microscopy

Angle-resolved Photoemission Spectroscopy Study on the Surface States of the Correlated Topological Insulator YbB 6

Electronic Structure of Correlated Topological Insulator Candidate YbB6 Studied by Photoemission and Quantum Oscillation

Additional Energy Scale in SmB6 at Low-Temperature

Non-Kondo-like Electronic Structure in the Correlated Rare-Earth Hexaboride YbB(6).

Nanoscale Conducting and Insulating Domains on YbB$_6$

Heavy Surface State In A Possible Topological Kondo Insulator: Magnetothermoelectric Transport On The (011) Plane Of Smb6

Surface and Bulk Electronic Structure of the Strongly Correlated System SmB6and Implications for a Topological Kondo Insulator

Metallic Surface Electronic State in Half-Heusler Compoundsrptbi (r=lu, Dy, Gd)

Direct Observation of Spin-Polarized Surface States in the Parent Compound of Topological Insulator Bi-Sb Using Spin-Resolved-arpes in a 3D Mott-polarimetry Spin Mode

Kondo Hybridization and the Origin of Metallic States at the (001) Surface Ofsmb6

Surface States of the Topological Insulator Bi_{1-x}Sb_x

Direct Observation of Spin-Polarized Surface States in the Parent Compound of a Topological Insulator Using Spin- and Angle-Resolved Photoemission Spectroscopy in a Mott-polarimetry Mode

Surface electronic structure of the topological Kondo insulator candidate correlated electron system SmB6

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

Topological surface conduction in Kondo insulator YbB$_{12}$

Determination of the Surface States from the Ultrafast Electronic States in a Thermoelectric Material

The Test of Topological Property of YbB6

Direct Observation of the Spin Texture in SmB6 As Evidence of the Topological Kondo Insulator

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering