Computer Simulation of Marker Evolution Upon Ion Irradiation

Cui Fu-Zhai,Li Heng-De,Liu Bai-Xin
DOI: https://doi.org/10.1557/proc-54-227
1985-01-01
MRS Proceedings
Abstract:In ion beam mixing, the subject on the marker evolution of Si/Pt/Si target during 300 keV Xe ion irradiation has been an interesting topic of recent years. A computer simulation for this system by using the Monte Carlo code TCIS-4 is reported here. Dynamic target model was employed. Some radiation-enhanced diffusion and relaxation of the displacement cascades were also considered. Results of this simulation study reveal the evolution of Pt marker profile with fluences during bombardment. The shifts of Pt marker and the dispersions evaluated from the profiles agree fairly well with experimental date, demonstrating a reslistic model of the target being irradiated is important.
What problem does this paper attempt to address?