Unit-Cell by Unit-Cell Homoepitaxial Growth Using Atomically Flat SrTiO 3 (001) Substrates and Pulsed Laser Deposition

YY Fei,X Wang,HB Lu,GZ Yang,XD Zhu
DOI: https://doi.org/10.1088/0256-307x/22/4/062
2005-01-01
Abstract:Using a combination of chemical etching and thermal annealing methods, we have obtained atomically flat TiO2-terminated SrTiO3 (001) with large terraces. The average width of the terrace is only determined by miscut angles. When we continuously grow tens of SrTiO3 monolayers on such a surface under pulsed laser ablation deposition condition at 621 degrees C, the growth proceeds in a layer-by-layer mode characterized by un-damped oscillations of the specular RHEED intensity. After the growth of 180 monolayers, the surface morphology is restored to the pre-growth condition with similarly large terraces after annealing in vacuum for only 30 min, indicating efficient mass transfer on TiO2-terminated terraces.
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