Abstract:The dimension and size of the building blocks as well as the preferential orientation, geometry and regularity of their assemblies are the most important key factors for fabricating thermoelectric materials with a high figure-of-merit (ZT) which is governed by the efficiencies in transporting electrical and thermal energies along the measurement direction. A one-step and large-area growth approach has been successfully developed employing pulsed laser deposition (PLD) for producing physically self-assembled and well-aligned Bi2Te3 nanostructures on SiO2/Si substrates without pre-built templates or catalysts. The precisely parameter-controlled growth provides four highly reproducible and significant Bi2Te3 assemblies, comprising 0-dimensional (0-D) nanoparticles, 1-D nanorods, 2-D nanoflakes, and 3-D nanocanyons, respectively exhibiting an overall (006), (015), (110), and (006) preferential orientation normal to the substrate surface. The nanoparticle assisted crystal growth is proposed, mainly involving the condensation of the plasma species in the gas phase at higher ambient pressures and the following diffusion and reorganization of the deposited nanoparticle atoms on the substrates. The well-aligned 0-D to 3-D Bi2Te3 nanostructures show more excellent in-plane power factors than most of the randomly aligned Bi2Te3 nanostructures at room temperature mainly due to significantly reducing inter resistance. The thermoelectric properties of these well-aligned Bi2Te3 nanostructures are comparable to any other intrinsic Bi2Te3 nanostructures that have ever been reported. The present data are valuable for further improving and designing advanced thermoelectric materials and confirm that precise control of nanostructural aggregation is an effective strategy for enhancing the thermoelectric performance.

Self-assisted nucleation and growth of [010]-oriented Sb2Se3 whiskers: the crystal structure and thermoelectric properties

Enhanced Thermoelectric Properties of SnSe Thin Films Grown by Pulsed Laser Glancing-Angle Deposition

Microstructures and Thermoelectric Properties of GeSbTe Based Layered Compounds

Anionic regulation and valence band convergence boosting the thermoelectric performance of Se-alloyed GeSb 2 Te 4 single crystal

Structurally nanocrystalline electrically monocrystalline Sb2Te3 with high thermoelectric performance

Strong lattice anharmonicity securing intrinsically low lattice thermal conductivity and high performance thermoelectric SnSb2Te4 via Se alloying

Growth of SnSe Single Crystal Via Vertical Vapor Deposition Method and Characterization of Its Thermoelectric Performance

Crystalline Structure-Dependent Mechanical and Thermoelectric Performance in A g 2 S e 1 ‐ x S x System

Enhancing thermoelectric performance of SrFBiS2−Se via band engineering and structural texturing

High Thermoelectric Performance of AgSb1-xPbxSe2 Prepared by Fast Non-Equilibrium Synthesis.

Bi8Se7: Delocalized Interlayer π-Bond Interactions Enhancing Carrier Mobility and Thermoelectric Performance near Room Temperature

Engineering atomic-level crystal lattice and electronic band structure for extraordinarily high average thermoelectric figure of merit in n-type PbSe

Band Modification Towards High Thermoelectric Performance of SnSb2Te4 with Strong Anharmonicity Driven by Cation Disorder

Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb2Te4 Single Crystals

Growth of Large Size SnSe Single Crystal and Comparison of Its Thermoelectric Property with Polycrystal

Modulating Electrical Transport Properties of SnSe Crystal to Improve the Thermoelectric Power Factor by Adjusting Growth Method

Rational triple optimizations boost near-room-temperature thermoelectric performance of BiSe

Thermoelectric Properties of an Individual Suspended Single-Crystalline Sb2Se3 Nanowire

Polycrystalline SnSe–Sn1–vS Solid Solutions: Vacancy Engineering and Nanostructuring Leading to High Thermoelectric Performance

Self-assembled bismuth telluride films with well-aligned zero- to three-dimensional nanoblocks for thermoelectric applications

van der Waals p-n heterostructure GaSe/SnS2: high thermoelectric figure of merit and strong anisotropy