Passivation Effect of Graphene on Algan/Gan Schottky Diode

Lingyan Shen,Xinhong Cheng,Zhongjian Wang,Chao Xia,Duo Cao,Li Zheng,Qian Wang,Yuehui Yu

DOI: https://doi.org/10.1039/c5ra12550b

IF: 4.036

2015-01-01

RSC Advances

Abstract:Monolayer graphene was used as a passivation layer on a AlGaN/GaN diode to reduce surface leakage current and increase flat-band voltage.

What problem does this paper attempt to address?

Effects of an Aln Passivation Layer on the Microstructure and Electronic Properties of Algan/Gan Heterostructures

C. Chen,D.J. Chen,Z.L. Xie,P. Han,R. Zhang,Y.D. Zheng,Z.H. Li,G. Jiao,T.S. Chen

DOI: https://doi.org/10.1007/s00339-007-4301-5

2007-01-01

Applied Physics A

Abstract:Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN heterostructures were investigated by X-ray diffraction and Hall effect measurements. AlN passivation induced an additional compressive stress in an AlGaN barrier layer instead of an additional tensile stress induced by Si3N4 passivation. The change of strain after passivation contributes in a relatively small proportion to the variation of the carrier concentration in AlGaN/GaN heterostructures compared with the contribution from passivation of surface traps. The results from Hall effect measurements show that the AlN passivation layer has a better effect on passivation of deep levels than the Si3N4 film and also results in a remarkable increase in mobility of the two-dimensional electron gas.
Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Sen Huang,Bo Shen,Fujun Xu,Fang Lin,Zhenlin Miao,Jie Song,Lin Lu,Zhixin Qin,Zhijian Yang,Guoyi Zhang

DOI: https://doi.org/10.1109/ICSICT.2008.4734648

2008-01-01

Abstract:The leakage current mechanism in Schottky contacts (SCs) to Al o25Ga0.75N/GaN heterostructures incorporated by thin high-temperature (HT) AlN interlayer has been investigated using current-voltage measurements, atomic force microscopy, and deep level transient spectroscopy. The HT AlN interlayer thickness has a significant effect on the leakage current in SCs. The leakage current density is reduced to 1.1×10 -4A/cm2 rapidly when the growth time of AlN interlayer increases from 0 to 10 s, and then changes to increase with increasing the growth time. Correspondingly, the heterostructure with 10 s AlN interlayer has the least number of surface pinholes. HT AlN thickness also influences significantly the density of the electron traps with the activation energy of 0.762 eV in Al0.25Ga0.75N barrier. It is suggested that HT AlN interlayer adjusts microstructures and defect states density in Al 1-xGaxN barrier, and leakage via these defect states makes the primary contribution to the leakage in SCs to Al1-xGa xN/GaN heterostructures. © 2008 IEEE.
Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Muhammad Asif,Ding Peng,Chen Chen,Wang Xi,Saeedullah Jan,Jin Zhi

DOI: https://doi.org/10.1166/jno.2018.2303

2018-01-01

Journal of Nanoelectronics and Optoelectronics

Abstract:Surface passivation has a great impact on the DC and RF performance of HEMTs. In this paper, a comparative study of the DC and RF performance of InAlAs/InGaAs InP HEMTs (with L-g = 100 nm), passivated by Si3N4-PECVD and Al2O3-ALD has been presented. Increase in C-gd and C-gs is significantly limited. After passivation, an increase in g(m.MAX) up to 1160 mS/mm and 1150 mS/mm is observed in both cases. Improvement in the RF performance in case of Si3N4-PECVD is more obvious than Al2O3-ALD. In addition, a small-signal equivalent circuit model has been developed. It provides excellent agreement between measured and simulated results.
Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Sen Huang,Bo Shen,Fu-Jun Xu,Fang Lin,Zhen-Lin Miao,Jie Song,Lin Lu,Long-Bin Cen,Li-Wen Sang,Zhi-Xin Qin,Zhi-Jian Yang,Guo-Yi Zhang

DOI: https://doi.org/10.1088/0268-1242/24/5/055005

IF: 2.048

2009-01-01

Semiconductor Science and Technology

Abstract:The leakage current mechanism in Schottky contacts (SCs) to Al0.25Ga0.75N/GaN heterostructures incorporated by a thin high-temperature (HT) AlN interlayer has been investigated using current-voltage measurements, atomic force microscopy and deep level transient spectroscopy. It is found that the HT AlN interlayer thickness has a significant effect on the leakage current in SCs. The leakage current density decreases to 1.1 x 10(-4) A cm(-2) when the growth time of the AlN interlayer increases from 0 to 10 s, and then changes to increase with increasing growth time. Correspondingly, the heterostructure with the AlN growth time of 10 s has the least number of surface pinholes. The thickness of the HT AlN also influences the density of electron traps with the activation energy of 0.762 eV in an Al0.25Ga0.75N barrier. It is suggested that the HT AlN interlayer adjusts the microstructure and the defect state density in the Al1-xGaxN barrier, and the leakage via these defect states makes the main contribution to the leakage current in SCs to Al1-xGaxN/GaN heterostructures.
Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer

Madani Labed,Nouredine Sengouga,You Seung Rim

DOI: https://doi.org/10.3390/nano12050827

2022-03-01

Abstract:Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (ϕB), from 1.32 to 0.43 eV, and in the series resistance (RS), from 60.3 to 2.90 mΩ.cm2. However, the saturation current (JS) increased from 1.26×10−11 to 8.3×10−7(A/cm2). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky−Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.
The Leakage Current Mechanisms in the Schottky Diode with A Thin Al Layer Insertion Between Al0.245ga0.755n/Gan Heterostructure and Ni/Au Schottky Contact

Lin Fang

DOI: https://doi.org/10.1088/1674-1056/18/4/054

2009-01-01

Chinese Physics B

Abstract:This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the temperature range of 25–350 °C. It compares with the Schottky diode without Aluminium inserting layer. The experimental results show that in the Schottky diode with Al layer the minimum point of I–V curve drifts to the minus voltage, and with the increase of temperature increasing, the minimum point of I–V curve returns the 0 point. The temperature dependence of gate-leakage currents in the novelty diode and the traditional diode are studied. The results show that the Al inserting layer introduces interface states between metal and Al0.245Ga0.755N. Aluminium reacted with oxygen formed Al2O3 insulator layer which suppresses the trap tunnelling current and the trend of thermionic field emission current. The reliability of the diode at the high temperature is improved by inserting a thin Al layer.
Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Sung-Wen Huang Chen,De-Ren Yang,Neng-Jie You,Wen-Chieh Ho,Jerry Tzou,Hao-Chung Kuo,Jia-Min Shieh

DOI: https://doi.org/10.1109/tnano.2020.3047378

2020-01-01

IEEE Transactions on Nanotechnology

Abstract:In this paper, we report a 1.84 kV GaN-on-GaN Schottky barrier diode (SBD) corresponds to a low on-resistance of 1.98 mΩ-cm 2 . The GaN epi-layer was etched to the multi-fins-structure with optimized bevel angle. The fins structure enables to improve the breakdown voltage by means of the uniforme electric field distribution. Afterwards, the GaN fins were capped by atomic layer deposition (ALD)-grown AlN film. The AlN served as a tunneling-barrier layer, which not only passivated the GaN surface but also decreased the turn-on voltage. The AlN-capped SBD shows a turn-on voltage at 0.18 V. Furthermore, the temperature-dependent transfer characteristics suggest the different current tunneling mechanisms at low and high electric field conditions, respectively. The time-dependent dielectric breakdown (TDDB) measurement suggests the surface traps were well passivated by ALD-AlN, which implies that the AlN cap-layer enables to improve the device reliability.
Modeling and Simulation of Graphene-Gated Graphene-Gaas Schottky Junction Field-Effect Solar Cell for Its Performance Enhancement

Wenchao Chen,Xiaoqiang Li,Wen-Yan Yin,Shisheng Lin,Zhenguo Zhao,Erping Li,Haijing Zhou

DOI: https://doi.org/10.1109/ted.2015.2478136

2015-01-01

Abstract:Modeling and simulation of graphene-gated graphene-GaAs Schottky junction field-effect solar cell is performed using in-house developed algorithm based on finite-difference method, where Poisson and drift-diffusion equations are solved in an appropriate way. Our algorithm is verified by comparing the simulated J-V curve of solar cell with the previous experimental one. The carrier generation rate is calculated with light multireflection in the solar cell excluded, due to large optical absorption coefficient of GaAs, and the radiative recombination in GaAs leads to similar to 5% light generated carrier loss. The charge transfer effect in graphene is investigated, which can affect open circuit voltage, and in particular for the semiconductor substrate with very low hole mobility. It is further numerically demonstrated that: 1) both open circuit voltage V-OC and short circuit current J(SC) of the solar cell are governed by doping concentration through affecting Schottky barrier height and depletion width; 2) the value of V-OC can be effectively adjusted by decreasing the thickness of gate oxide; however, it may result in oxide breakdown or reliability problem; and 3) there is tunability inertia for V-OC with multilayer junction graphene implemented, but it can provide low series resistance.
Effects of Interface Oxidation on the Transport Behavior of the Two-Dimensional-electron-gas in AlGaN/GaN Heterostructures by Plasma-Enhanced-atomic-layer-deposited AlN Passivation

Sen Huang,Ke Wei,Zhikai Tang,Shu Yang,Cheng Liu,Lei Guo,Bo Shen,Jinhan Zhang,Xin Kong,Guoguo Liu,Yingkui Zheng,Xinyu Liu,Kevin J. Chen

DOI: https://doi.org/10.1063/1.4824829

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:The effects of interface oxidation on the transport behavior of the 2-D electron gas (2DEG) in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN (PEALD-AlN) passivation were investigated using temperature-dependent Hall-effect and X-ray photoelectron spectroscopy (XPS) characterizations. AlGaN/GaN heterostructure with a 4-nm-thick PEALD-AlN passivation exhibits good 2DEG transport behavior and stability at moderately high temperature (e.g., 275 °C). However, serious oxidation of the AlN/GaN (cap layer) interface occurs as the sample is heated up to 400 °C in low-pressure atmosphere, as verified by an increased Ga-O bond in Ga 3d core-level spectra. The oxidation leads to a significant reduction of 2.47 × 1012 cm−2 in the 2DEG density in the channel. A modified AlN passivation structure with Al2O3/AlN (10/4 nm) stack is shown to be able to effectively suppress the oxidation of the AlN/GaN interface, demonstrating an enhanced 2DEG density and high-temperature stability even when the sample is heated up to 500 °C. Based on XPS and 2DEG recovery experiments, it is suggested that acceptor-like deep levels have been generated in the near-surface region of AlGaN/GaN heterostructure because of the oxidation, and trapping of these deep levels results in significant depletion of the 2DEG in the channel. The effects of PEALD-AlN passivation on the strain in the AlGaN barrier of AlGaN/GaN heterostructures are also evaluated with high-resolution X-ray diffraction technique.
Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode

Peng Wu,Hong-Yu Zhu,Jin-Xing Wu,Tao Zhang,Jin-Cheng Zhang,Yue Hao,Wu Peng,Zhu Hongyu,Wu Jinxing,Zhang Tao,Zhang Jincheng,Hao Yue,,

DOI: https://doi.org/10.7498/aps.72.20230709

IF: 0.906

2023-01-01

Acta Physica Sinica

Abstract:AlGaN/GaN heterojunction epitaxies with wide bandgap, high critical electric field as well as high density and high mobility two-dimensional electron gas have shown great potential in the application of next-generation high-power and high-frequency devices. Especially, with the development of Si-based GaN epitaxial technique with big size, GaN devices with low cost also show great advantage in consumer electronics. In order to improve the rectification efficiency of AlGaN/GaN Schottky barrier diodes, low leakage current and low turn-on voltage are important. GaN Schottky barrier diodes with low work-function metal as anode are found to be an effective method to decrease turn-on voltage. However, the low Schottky barrier height makes the Schottky interface sensitive to damages of groove surface, which leads to a high leakage current. In this paper, a novel wet-etching technique with thermal oxygen oxidation and KOH corrosion is used to prepare the anode groove, and the surface roughness of groove decreases from 0.57 to 0.23 nm, compared to the dry-etching surface of groove. Meanwhile, the leakage current is suppressed from 1.5×10 -6 to 2.6×10 -7 A/mm. Benefiting from the great corrosion selectively of hot KOH solution to AlGaN barrier layer and GaN channel layer after thermal oxygen oxidation, the spikes of the edge of groove region caused by the nonuniform distribution of plasma in the cavity, and the breakdown voltage of the fabricated AlGaN/GaN SBDs is improved from -1.28 to -1.73 kV.

physics, multidisciplinary
Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode*

Zhou Gui-lin,Zheng Yue,W. Zhisheng,Shen Zhen,H. Zhiyuan,Z. Jian,Zhou Deqiu,Liu Yang,Zhang Bai-jun,Ni Yiqiang,Yao Yao,Yang Fan

DOI: https://doi.org/10.1088/1674-1056/24/9/097303

2015-07-20

Abstract:The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICP-recessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency (RF) power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power. Based on detailed current–voltage–temperature (I–V–T) measurements, the barrier height of thermionic-field emission (TFE) from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel–Poole (FP) emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.

Engineering,Materials Science,Physics
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

Guangnan Zhou,Zeyu Wan,Gaiying Yang,Yang Jiang,Robert Sokolovskij,Hongyu Yu,Guangrui

DOI: https://doi.org/10.1109/TED.2020.2968596

2019-10-23

Abstract:In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can increase the ION/IOFF ratios by a factor of 50, increase the VTH by 0.30 V and reduce the off-state gate leakage by 50 times. Additionally, this novel gate structure has better thermal stability. After thermal annealing at 350 °C, gate breakdown voltage holds at 12.1 V, which is first reported for Schottky gate p-GaN HEMTs. This is considered to be a result of the 0.24 eV increase in Schottky barrier height and the better quality of the Ti/graphene/p-GaN and Ti/graphene/SiNx interfaces. This approach is very effective in improving the Ion/Iff ratio and gate BV of normally-OFF GaN HEMTs.

Applied Physics,Materials Science
Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

Ren Liu,Xu-Chen You,Xue-Wen Fu,Fang Lin,Jie Meng,Da-Peng Yu,Zhi-Min Liao

DOI: https://doi.org/10.1038/srep10125

IF: 4.6

2015-01-01

Scientific Reports

Abstract:Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (V g ). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7 and the Schottky barrier height is ~0.28 eV without external V g . The Schottky barrier height is sensitive to V g due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping V g towards the negative value, while decreases slowly towards the positive V g . Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.
Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

Wen-Cheng Ke,Solomun Teklahymanot Tesfay,Tae-Yeon Seong,Zhong-Yi Liang,Chih-Yung Chiang,Chieh-Yi Chen,Widi Son,Kuo-Jen Chang,Jia-Ching Lin

DOI: https://doi.org/10.1021/acsami.9b18976

2019-12-26

Abstract:Carbon-doped GaN (GaN:C) Schottky diodes are prepared by controlling the destruction status of the graphene interlayer (GI) on the substrate. The GI without a sputtered AlN capping layer (CL) was destroyed because of ammonia precursor etching behavior in a high-temperature epitaxy. The damaged GI, like nanographite as a solid-state carbon doping source, incorporated the epitaxial growth of the GaN layer. The secondary ion mass spectroscopy depth profile indicated that the carbon content in the GaN layer can be tuned further by optimizing the sputtering temperature of AlN CL because of the better capping ability of high crystalline quality AlN CL on GI being achieved at higher temperature. The edge-type threading dislocation density and carbon concentration of the GaN:C layer with an embedded 550 °C-grown AlN CL on a GI substrate can be significantly reduced to 2.28 × 109 cm-2 and ∼2.88 × 1018 cm-3, respectively. Thus, a Ni-based Schottky diode with an ideality factor of 1.5 and a barrier height of 0.72 eV was realized on GaN:C. The series resistance increased from 28 kΩ at 303 K to 113 kΩ at 473 K, while the positive temperature coefficient (PTC) of series resistance was ascribed to the carbon doping that induced the compensation effect and lattice scattering effect. The decrease of the donor concentration was confirmed by temperature-dependent capacitance-voltage (C-V-T) measurement. The PTC characteristic of GaN:C Schottky diodes created by dissociating the GI as a carbon doping source should allow for the future use of high-voltage Schottky diodes in parallel, especially in high-temperature environments.
Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Yong Lei,Hai Lu,Dongsheng Cao,Dunjun Chen,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1016/j.sse.2013.01.007

IF: 1.916

2013-01-01

Solid-State Electronics

Abstract:In this work, Schottky barrier diodes with vertical geometry were fabricated on low-defect-density homoepitaxial GaN for studying the reverse leakage mechanism of GaN-based Schottky contact. A leakage current model based on electron transmission primarily through linear defects like dislocations was suggested to explain the reverse current-voltage characteristics measured between 300 and 410 K, in which electrons from contact metal overcome the locally height-reduced Schottky barrier through thermionic-field emission. (C) 2013 Elsevier Ltd. All rights reserved.
Effect of Oxygen Plasma Treatment on AlGaN Schottky Contacts

唐广,郝智彪,钱可元,罗毅

DOI: https://doi.org/10.3969/j.issn.1007-4252.2004.04.011

2004-01-01

Abstract:The effects of dry etching and oxyge n plasma treatment on AlGaN surface p roperty were studied.Under optimized condition,the surface of AlGaN is oxidated resulting in decreased reverse leakage current by two orders of magn itude and increased breakdown volta ge.This method is simple to fabricate high performance AlGaN/GaN HEMT devices.
Demonstrating the Electron Blocking Effect of AlGaN/GaN Superlattice Cladding Layers in GaN-based Laser Diodes

Shukun Li,Menglai Lei,Rui Lang,Guo Yu,Huanqing Chen,Peijun Wen,Muhammad Saddique Akbar Khan,Linghai Meng,Hua Zong,Shengxiang Jiang,Xiaodong Hu

DOI: https://doi.org/10.1088/1361-6641/acd573

IF: 2.048

2023-01-01

Semiconductor Science and Technology

Abstract:Electron leakage currents seriously limit the power conversion efficiencies (PCEs) of gallium nitride (GaN)-based laser diodes (LDs). To minimize the leakage currents, electron blocking layers are generally applied in the p-type region. However, few works have discussed the electron blocking effect of a p-cladding layer, which is found to be critical in suppressing the leakage currents of an LD. In this work, we compare the blocking performance of uniform AlGaN p-cladding layers and AlGaN/GaN superlattice (SL) p-cladding layers with the same average Al component respectively. Both light-emitting diodes (LEDs) and LDs with the same epitaxy structures are characterized by light-current (L-I) and current-voltage (I-V) measurements. The latest analytical model of leakage currents is applied to fit the L-I curves of LEDs, where smaller leakage coefficients are observed in the SL structures compared with the uniform-layer structures. Eighty LDs with varying ridge widths are studied by comparing the threshold current densities, slope efficiencies, and PCEs. The SL-based p-cladding layer shows statistically significant advantages over a uniform AlGaN layer. The blocking effects of both scattering- and bound-state electrons in SLs are investigated theoretically. Repetitive reflection and thermal relaxation are responsible for the blocking effect of scattering-state electrons. Simulation results indicate that the tunneling effect of bound-state electrons through a miniband mechanism is insignificant at a large injection level due to a negative differential conductivity by the Esaki-Tsu effect. We demonstrate a better electron blocking performance of p-cladding layers based on SLs than uniform AlGaN layers in GaN-based LDs.
Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

D. J. Chen,Y. Q. Tao,C. Chen,R. Zhang,Y. D. Zheng,M. J. Wang,B. Shen,Z. H. Li,G. Jiao,T. S. Chen

DOI: https://doi.org/10.1063/1.2408657

IF: 4

2006-01-01

Applied Physics Letters

Abstract:The transport properties of the two dimensional electron gas (2DEG) in AlGaN∕GaN heterostructures with AlN, Si3N4, and SiO2 passivation layers and without passivation layer were investigated using Hall effect measurements over a temperature range of 30–550°C. Compared to the Si3N4 and SiO2 passivation dielectrics, the AlN film led to an obvious increase not only in carrier concentration but also in mobility of the 2DEG. The variation of the carrier concentration with temperature in the AlN passivated sample is also smaller in comparison with the Si3N4 passivated sample. These indicate that the AlN film is a promising passivation dielectric. In addition, the results from Hall and high-resolution x-ray diffraction measurements show that the change of strain after passivation contributes only in a relatively small proportion to the variation of the carrier concentration in AlGaN∕GaN heterostructures.
Impact of Graphene Interlayer on Performance Parameters of Sandwich Structure Pt/GaN Schottky Barrier Diodes

J. X. Ran,B. Y. Liu,X. L. Ji,A. Fariza,Z. T. Liu,J. X. Wang,P. Gao,T. B. Wei

DOI: https://doi.org/10.1088/1361-6463/ab9a9b

2020-01-01

Abstract:In this work, we have designed excellent performance GaN-based Schottky barrier diode (SBD) with a sandwich structure by inserting a graphene (Gr) interlayer. The electrical properties of Pt/Gr/GaN and Pt/GaN SBDs have been systematically investigated by the temperature-dependent current-voltage (I-V) and capacitance-voltage measurements in order to explore the effects of Gr on main diode parameters. At room temperature, the Pt/Gr/GaN SBD exhibited lower turn-on voltage (V-on), ideality factor (n), differential specific on-resistance (R-on), and higher Schottky barrier height (SBH), signifying enhanced device attributes. Furthermore, the ideality factor and SBH for the Pt/Gr/GaN SBD were found to be insensitive to temperature from the temperature-dependentI-Vanalysis. The results revealed a highly homogeneous Schottky barrier interface in the case of Pt/Gr/GaN SBD. This facile strategy opened a pathway to improve the performance of the nitride Schottky rectifiers.
Capacitance reduction in AlGaN/GaN heterojunction diodes through thermally oxidized NiO anode

Qiuen Li,xuanwu Kang,Hao Wu,Rikang Zhao,Yingkui Zheng,Hengyu Shang,Xinyu Liu,Chengjun Huang

DOI: https://doi.org/10.35848/1347-4065/ad6ed5

IF: 1.5

2024-09-13

Japanese Journal of Applied Physics

Abstract:In this study, a thin barrier AlGaN/GaN heterojunction diode with a NiO anode is proposed. NiO as an anode combined with a 5 nm AlGaN barrier layer can significantly deplete two-dimensional electron gas in the anode region of the device. Combined with the etching-free technology, the damage caused by etching the AlGaN barrier layer is successfully avoided. The capacitance of the device was reduced from 28 pF mm−1 (Schottky) to 966 fF/mm (NiO) which reduced 97%. At the same time the NiO anode devices with a reverse current leakage of ~10−8 A/mm@−100V achieved a high current ON/OFF ratio of ~10-8. NiO not only reduces the capacitance and leakage of the device but also enhances its anti-collapse ability. Without using the structure of field plates, the breakdown voltage of the device was also increased compared with the Schottky diode.

physics, applied

Passivation Effect of Graphene on Algan/Gan Schottky Diode

Effects of an Aln Passivation Layer on the Microstructure and Electronic Properties of Algan/Gan Heterostructures

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer

The Leakage Current Mechanisms in the Schottky Diode with A Thin Al Layer Insertion Between Al0.245ga0.755n/Gan Heterostructure and Ni/Au Schottky Contact

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Modeling and Simulation of Graphene-Gated Graphene-Gaas Schottky Junction Field-Effect Solar Cell for Its Performance Enhancement

Effects of Interface Oxidation on the Transport Behavior of the Two-Dimensional-electron-gas in AlGaN/GaN Heterostructures by Plasma-Enhanced-atomic-layer-deposited AlN Passivation

Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode

Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode*

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Effect of Oxygen Plasma Treatment on AlGaN Schottky Contacts

Demonstrating the Electron Blocking Effect of AlGaN/GaN Superlattice Cladding Layers in GaN-based Laser Diodes

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

Impact of Graphene Interlayer on Performance Parameters of Sandwich Structure Pt/GaN Schottky Barrier Diodes

Capacitance reduction in AlGaN/GaN heterojunction diodes through thermally oxidized NiO anode