Abstract:The native amorphous silicon oxide (SiO 2 ) layer formed on the Si substrate leads to the (100) preferred orientation for β-phase gallium oxide (β-Ga 2 O 3 ), which encounters various defects in β-Ga 2 O 3 , such as twin boundaries and stacking faults etc. The (111) preferred orientation of titanium nitride (TiN) hetero-buffer layer can be used in the interface between β-Ga 2 O 3 and Si substrates to reduce the lattice mismatch between them and increase the (˗201) preferred orientation for β-Ga 2 O 3 . The lattice mismatch between TiN (111) and β-Ga 2 O 3 (˗201) is 0.76%, which is less than the β-Ga 2 O 3 (˗201)/Si (111) about ˗6.3%. The β-Ga 2 O 3 and TiN films were grown using radio-frequency magnetron sputtering on Si substrates, which possess polycrystalline nature as revealed using X-ray diffraction patterns and high-resolution transmission electron micrographs. The optimal parameters are found as, process atmosphere: Ar = 10 sccm, RTA: 800 °C for β-Ga 2 O 3 /TiN (300 nm)/Si. This work highlights the effect of the TiN hetero-buffer layer, the process atmosphere, and annealing temperatures on the microstructural and surface morphology of β-Ga 2 O 3 films. The lateral Schottky barrier diode (SBD) were fabricated using the optimized β-Ga 2 O 3 /TiN (300 nm)/Si film. The Baliga's Figure of Merit (BFOM) of the lateral SBD is 7.60 × 10 −2 kW/cm 2 , which exhibits 4 order of BFOM higher than that of β-Ga 2 O 3 /Si SBD due to interface engineering. The β-Ga 2 O 3 /TiN (300 nm)/Si hetero-structure demonstrates a promising material to be employed in the next generation β-Ga 2 O 3 based power devices.

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