Interface Engineering and Efficiency Improvement of Monolayer Graphene–silicon Solar Cells by Inserting an Ultra-Thin LiF Interlayer

Dikai Xu,Xuegong Yu,Lijian Zuo,Deren Yang

DOI: https://doi.org/10.1039/c5ra05619e

IF: 4.036

2015-01-01

RSC Advances

Abstract:A thin LiF layer can suppress the back surface recombination and improve the efficiency of Gr–Si solar cells.

What problem does this paper attempt to address?

Interface Engineering for Efficient and Stable Chemical-Doping-free Graphene-on-silicon Solar Cells by Introducing a Graphene Oxide Interlayer

Lifei Yang,Xuegong Yu,Mingsheng Xu,Hongzheng Chen,Deren Yang

DOI: https://doi.org/10.1039/c4ta02216e

IF: 11.9

2014-01-01

Journal of Materials Chemistry A

Abstract:Graphene-on-silicon (Gr–Si) heterojunction solar cells have recently attracted significant attention as promising candidates for low-cost photovoltaic applications. However, the power conversion efficiency of Gr–Si solar cells is generally smaller than 4% without chemical doping treatments. It is mainly limited by the low work function of Gr and high density defect states at the Gr–Si interface. Here, we have reported a new structure of Gr–Si solar cells by introducing a graphene oxide (GO) interlayer to engineer the Gr–Si interface for improving device performance. It is found that the GO interlayer can effectively increase open circuit voltage and meanwhile suppress the interface recombination of solar cells. As a result, a maximum efficiency of 6.18% can be achieved for the Gr/GO/Si solar cells, which is a new record for the pristine monolayer Gr–Si solar cell reported to date. Further, it is clarified that the Gr/GO/Si solar cell is significantly more stable than the Gr–Si solar cell with chemical doping. These results show a new route for fabricating efficient and stable chemical-doping-free Gr–Si solar cells.
Ultra-thin LiF Layer As the Electron Collector for A-Si:H Based Photovoltaic Cell

Delft University of Technology,Melskens Jimmy,Smets Arno,Zeman Miro,Amaratunga Gehan

DOI: https://doi.org/10.1557/adv.2017.250

2017-01-01

MRS Advances

Abstract:An ultra-thin LiF layer in conjunction with an Al layer is employed as the electron collector for the a-Si:H based single-junction thin film photovoltaic cell. The cell has the structure of boron doped μ-SiO x (hole collector) - intrinsic a-Si:H (photoactive layer) - LiF / Al (electron collector and back electrode). The substrate used is U type Asahi glass, which is also acting as the transparent front electrode. For the cell with the 1.5 nm thick LiF layer, annealed at 120 o C, the open current voltage (V OC ) of 0.936 V, the short current density (J SC ) of 13.598 mA/cm 2 , and the fill factor (FF) of 0.690 are achieved. The J SC and V OC values are comparable to the values measured for the a-Si:H based p-i-n reference cell, but the FF value is found to be lower, which is attributed to the losses due to recombination at the intrinsic a-Si:H / LiF / Al junction. The current versus voltage measurements are carried out under the standard test conditions. The J SC values are corrected according to the external quantum efficiency measurements of the cells in the AM1.5 spectrum region between 270 nm and 800 nm.
Inter-atomic diffusion of fluorine and oxygen forming electron-selective extraction for high-efficiency dopant-free silicon solar cells

Junjun Li,Jian Yu,Yang Chen,Cong Guo,Wenzhu Liu,Yaru Gao,Tao Chen,Jiaxuan Liao,Yuelong Huang

DOI: https://doi.org/10.1016/j.jallcom.2022.167845

IF: 6.2

2022-11-16

Journal of Alloys and Compounds

Abstract:A near-record-efficiency of 21.3% on dopant-free silicon solar cell has been achieved with transparent and low work function LiF x /MgF x O y electron-selective contact in our recent work. In this paper, the detailed formation of LiF x /MgF x O y and the influence of surface and interface characteristics on contact resistance, cell performances are systematically investigated. Scanning electron microscopy (SEM) images indicate that appropriate thickness of Mg layer can improve the surface status and facilitate good ohmic contact. Post-annealing treatment can further smooth the pyramid surface and improve the interface properties. The insertion of ultra-thin LiF x film can produce an effectively back-surface-field and promote electron-selective transport without deteriorating contact resistance. The scanning transmission electron microscopy (STEM) results further prove the in-situ inter-atomic diffusion of Fluorine (F) and Oxygen (O) at the LiF x /Mg interface, forming the LiF x /MgF x O y hybrid film stacks. As a proof-of-concept, the dopant-free silicon solar cells are fabricated with LiF x /MgF x O y electron-selective contact, achieving an impressive cell efficiency of> 21%. The formation of F and O co-diffused electron-selective contact presents a great potential for high-efficiency dopant-free silicon solar cells and perovskite solar cells application.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Interface coupling in graphene/fluorographene heterostructure for high-performance graphene/silicon solar cells

Mengyao Zhong,Dikai Xu,Xuegong Yu,Kun Huang,Xuemei Liu,Yiming Qu,Yang Xu,Deren Yang

DOI: https://doi.org/10.1016/j.nanoen.2016.08.031

IF: 17.6

2016-01-01

Nano Energy

Abstract:One-step approach for doping and interface engineering of the Gr/Si solar cells was realized by using the fluorographene(FG) as an insulator interlayer. Metal/insulator/semiconductor (MIS) like solar cells with a structure of Gr/FG/Si were composed. The F atoms of FG serve as electron acceptors and yield p-type doping, which is beneficial for improving the Schottky barrier. The carrier recombination of the solar cell can be effectively suppressed by the employment of the FG interlayer and the PCE of the solar cell increased from 3.17% to 7.52%. More interestingly, the performance of Gr/FG/Si solar cell can be further enhanced by applying a temporary voltage bias, which was likely associated with rotation of the C―F bonds or/and enhancement of the Gr/FG coupling in electrical field. A PCE up to 13.38% was achieved by combining the AR technology and chemical doping from the top-side of the Gr.
A review on graphene-silicon Schottky junction interface

Lihui Song,Xuegong Yu,Deren Yang

DOI: https://doi.org/10.1016/j.jallcom.2019.07.259

IF: 6.2

2019-01-01

Journal of Alloys and Compounds

Abstract:Graphene-silicon (Gr-Si) Schottky barrier solar cells (SBSC) have experienced a significant improvement in cells’ efficiency from less than 2%–15.6% in a decade. So far, the record efficiency of 15.6% was achieved via a combination of techniques such as interface oxide passivation, chemical doping, anti-reflection coating and et al. In this paper, a particular attention is paid to recently developed techniques to passivate Gr-Si interface, resulting in a significantly reduced interface recombination and hence a better open circuit voltage (Voc) of the cells. Three methods: 1.dangling bonds termination; 2.insulator layer insertion; 3. hole transport layer insertion, are reported to be able to passivate the Gr-Si interface. We will introduce these three methods and their underlying mechanisms in turn in this paper and, at last, put forward our thoughts on further improving the Gr-Si interface passivation.
Interface Engineering of Graphene/silicon Solar Cells by Introducing an Ultrathin Magnesium Oxide Interlayer

Zhao jian-jiang,Xu Ming-sheng

DOI: https://doi.org/10.3788/gzxb20184712.1223002

2018-01-01

Abstract:In order to investigate the characteristics of the back-side surface, i.e., Al/Si, of graphene/Si solar cells, a ultra-thin magnesium oxide interlayer with various thickness between the Al electrode and the silicon substrate was prepared by using a successive thermal evaporation deposition technology. The current-voltage curves, external quantum efficiency, series resistance, and back contact resistance of the graphene/Si solar cells with different thickness of the magnesium oxide interlayer were measured. The results show that the photoelectric conversion efficiency, series resistance and back contact resistance increased first and then decreased with the increase in the magnesium oxide thickness, and the device performance is best when the thickness of magnesium oxide layer is 1 nm. The photoelectric conversion efficiency, series resistance and back contact resistance of the solar cells with 0 nm and 1 nm MgO are 2.90%, 4.2 Omega, 9.6 Omega, and 5.53%, 1.8 Omega, 3.2 Omega.
Design and Photovoltaic Properties of Graphene/Silicon Solar Cell

Dikai Xu,Xuegong Yu,Lifei Yang,Deren Yang

DOI: https://doi.org/10.1007/s11664-018-6268-8

IF: 2.1

2018-01-01

Journal of Electronic Materials

Abstract:Graphene/silicon (Gr/Si) Schottky junction solar cells have attracted widespread attention for the fabrication of high-efficiency and low-cost solar cells. However, their performance is still limited by the working principles of Schottky junctions. Modulating the working mechanism of the solar cells into a quasi p–n junction has advantages, including higher open-circuit voltage (VOC) and less carrier recombination. In this study, Gr/Si quasi p–n junction solar cells were formed by inserting a tunneling Al2O3 interlayer in-between graphene and silicon, which led to obtain the PCE up to 8.48% without antireflection or chemical doping techniques. Our findings could pave a new way for the development of Gr/Si solar cells.
High-Performance Ultrathin Organic-Inorganic Hybrid Silicon Solar Cells via Solution-Processed Interface Modification.

Jie Zhang,Yinan Zhang,Tao Song,Xinlei Shen,Xuegong Yu,Shuit-Tong Lee,Baoquan Sun,Baohua Jia

DOI: https://doi.org/10.1021/acsami.7b02140

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Organic-inorganic hybrid solar cells based on n-type crystalline silicon and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) exhibited promising efficiency along with a low-cost fabrication process. In this work, ultrathin flexible silicon substrates, with a thickness as low as tens of micrometers, were employed to fabricate hybrid solar cells to reduce the use of silicon materials. To improve the light-trapping ability, nanostructures were built on the thin silicon substrates by a metal-assisted chemical etching method (MACE). However, nanostructured silicon resulted in a large amount of surface-defect states, causing detrimental charge recombination. Here, the surface was smoothed by solution-processed chemical treatment to reduce the surface/volume ratio of nanostructured silicon. Surface-charge recombination was dramatically suppressed after surface modification with a chemical, associated with improved minority charge-carrier lifetime. As a result, a power conversion efficiency of 9.1% was achieved in the flexible hybrid silicon solar cells, with a substrate thickness as low as ∼14 μm, indicating that interface engineering was essential to improve the hybrid junction quality and photovoltaic characteristics of the hybrid devices.
Effect of A-Si : H Interface Buffer Layer on the Performance of Hydrogenated Amorphous Silicon Germanium Thin Film Solar Cell

Liu Bo-Fei,Bai Li-Sha,Zhang De-Kun,Wei Chang-Chun,Sun Jian,Hou Guo-Fu,Zhao Ying,Zhang Xiao-Dan

DOI: https://doi.org/10.7498/aps.62.248801

IF: 0.906

2013-01-01

Acta Physica Sinica

Abstract:In the light of the open circuit voltage and fill factor reduction resulting from band gap discontinuities and high defect densities at interfaces when more germanium is mixed into the intrinsic layer of hydrogenated amorphous silicon germanium solar cell, the insertion of a-Si : H buffer layer with proper band gap into PI interface not only mitigates band gap discontinuities and interface recombination, but also improves the electric field distribution by reducing the defect densities at PI interface, thus the collection efficiency of a-SiGe : H solar cell is enhanced. By inserting a-Si : H buffer layer into IN interface and designing band gap profile along the a-SiGe : H intrinsic layer further, the 8.72% conversion efficiency of single junction a-SiGe : H solar cell is achieved when only Al back reflector is added as back contact.
Interface Engineering of Graphene-Silicon Heterojunction Solar Cells

Dikai Xu,Xuegong Yu,Lifei Yang,Deren Yang

DOI: https://doi.org/10.1016/j.spmi.2016.03.022

IF: 3.22

2016-01-01

Superlattices and Microstructures

Abstract:Graphene has attracted great research interests due to its unique mechanical, electrical and optical properties, which opens up a huge number of opportunities for applications. Recently, Graphene-Silicon (GrSi) solar cell has been recognized as one interesting candidate for the future photovoltaic. Since the first GrSi solar cell reported in 2010, GrSi solar cell has been intensively investigated and the power converse efficiency (PCE) of it has been developed to 15.6%. This review presents and discusses current development of GrSi solar cell. Firstly, the basic concept and mechanism of GrSi solar cell are introduced. Then, several key technologies are introduced to improve the performance of GrSi solar cells, such as chemical doping, annealing, Si surface passivation and interlayer insertion. Particular emphasis is placed on strategies for GrSi interface engineering. Finally, new pathways and opportunities of “MIS-like structure” GrSi solar cells are described.
Room-Temperature Processed, Air-Stable And Highly Efficient Graphene/Silicon Solar Cells With An Organic Interlayer

Dikai Xu,Xuegong Yu,Dace Gao,Xinhui Mu,Mengyao Zhong,Shuai Yuan,Jiangsheng Xie,Wenying Ye,Jiabin Huang,Deren Yang

DOI: https://doi.org/10.1039/c6ta03759c

IF: 11.9

2016-01-01

Journal of Materials Chemistry A

Abstract:Graphene/silicon (Gr/Si) solar cells have attracted interest for their potential in low-cost photovoltaic applications. Inserting a p-type organic hole transporting layer (HTL) in-between the Gr and Si would suppress carrier recombination and improve the performance of the solar cells. Here, we report highly stable and high-performance Gr/Si solar cells fabricated by using a room-temperature process. Spiro-OMeTAD was selected as the HTL for its novel electrical and optical properties. The employment of spiro-OMeTAD led to an impressive power conversion efficiency (PCE) of 13.02%. Moreover, our solar cells exhibit excellent stability with a PCE of similar to 11% for over four months. These results could be encouraging for the development of Gr/Si solar cells toward practical applications. Meanwhile, this work offers a universal solution for the application of organics in Gr-based optoelectronics and photovoltaics from the viewpoint of device robustness.
Enhanced Charge Separation by Sieve‐Layer Mediation in High‐Efficiency Inorganic‐Organic Solar Cells

Chien-Hung Lin,Surojit Chattopadhyay,Chia-Wen Hsu,Meng-Hsiu Wu,Wei-Chao Chen,Chien-Ting Wu,Shao-Chin Tseng,Jih-Shang Hwang,Jiun-Haw Lee,Chun-Wei Chen,Cheng-Hsuan Chen,Li-Chyong Chen,Kuei-Hsien Chen

DOI: https://doi.org/10.1002/adma.200701309

IF: 29.4

2009-01-01

Advanced Materials

Abstract:The introduction of a thin electronic sieve layer of a material with a wide bandgap, such as lithium fluoride (LiF) or silicon oxide (SiOx), at the inorganic-organic interface of an organic photovoltaic device enhances the charge separation and improves the efficiency by more than an order to a maximum of 6.04%.
Surface modification and interface engineering to enhance the performance of 2D-graphene/3D-silicon Schottky junction solar cells

Amir Muhammad Afzal,Muhammad Imran,Muhammad Waqas Iqbal,Muhammad Zahir Iqbal,Sohail Mumtaz,Muhammad Azeem,Ghulam Dastgeer,Essam A. Al-Ammar,Asghar Ali

DOI: https://doi.org/10.1007/s10854-024-13880-y

2024-11-29

Journal of Materials Science Materials in Electronics

Abstract:Two-dimensional (2D) graphene (Gr) is considered the most suitable material for energy harvesting devices. The 2D materials-based, low-cost, tremendously efficient, and long-term stability-based solar cell devices are necessary for the present era. In this study, the multilayer graphene is directly grown on a silicon substrate by the plasma-enhanced chemical vapor deposition (PVCVD) method. A Gr/n-Si 2D/3D heterojunction solar cell is designed to increase the power conversion efficiency (PCE) and study the effect of various interfacial layers. The inclusion of an interfacial layer composed of hexagonal boron nitride (h-BN) leads to an enhanced value of PCE up to 11.3%, which is a notable enhancement over that of the reference sample (3.71%). The enhancement of solar cell performance by up to 67% can be attributed to improvements in the number of active sites, work functions, and tunneling current. The mechanisms underlying the charge transfer of charge carriers and recombination rate can be elucidated with the help of utilization of the diode along the tunnelling model, namely Fowler–Nordheim tunnelling (FNT) and direct tunnelling (DT). The simultaneous treatment of the photovoltaic device, resulting in a significant improvement in performance, offers a foundation for the development of energy harvesting devices with superior capabilities.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
An 8.68% Efficiency Chemically-Doped-free Graphene-Silicon Solar Cell Using Silver Nanowires Network Buried Contacts.

Lifei Yang,Xuegong Yu,Weidan Hu,Xiaolei Wu,Yan Zhao,Deren Yang

DOI: https://doi.org/10.1021/am508211e

IF: 9.5

2015-01-01

ACS Applied Materials & Interfaces

Abstract:Graphene-silicon (Gr-Si) heterojunction solar cells have been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the high sheet resistance of chemical vapor deposited (CVD) Gr films is still the most important limiting factor for the improvement of the power conversion efficiency of Gr-Si solar cells, especially in the case of large device-active area. In this work, we have fabricated a novel transparent conductive film by hybriding a monolayer Gr film with silver nanowires (AgNWs) network soldered by the graphene oxide (GO) flakes. This Gr-AgNWs hybrid film exhibits low sheet resistance and larger direct-current to optical conductivity ratio, quite suitable for solar cell fabrication. An efficiency of 8.68% has been achieved for the Gr-AgNWs-Si solar cell, in which the AgNWs network acts as buried contacts. Meanwhile, the Gr-AgNWs-Si solar cells have much better stability than the chemically doped Gr-Si solar cells. These results show a new route for the fabrication of high efficient and stable Gr-Si solar cells.
Colloidal antireflection coating improves graphene-silicon solar cells.

Enzheng Shi,Hongbian Li,Long Yang,Luhui Zhang,Zhen Li,Peixu Li,Yuanyuan Shang,Shiting Wu,Xinming Li,Jinquan Wei,Kunlin Wang,Hongwei Zhu,Dehai Wu,Ying Fang,Anyuan Cao

DOI: https://doi.org/10.1021/nl400353f

IF: 10.8

2013-01-01

Nano Letters

Abstract:Carbon nanotube-Si and graphene-Si solar cells have attracted much interest recently owing to their potential in simplifying manufacturing process and lowering cost compared to Si cells. Until now, the power conversion efficiency of graphene-Si cells remains under 10% and well below that of the nanotube-Si counterpart. Here, we involved a colloidal antireflection coating onto a monolayer graphene-Si solar cell and enhanced the cell efficiency to 14.5% under standard illumination (air mass 1.5, 100 mW/cm(2)) with a stable antireflection effect over long time. The antireflection treatment was realized by a simple spin-coating process, which significantly increased the short-circuit current density and the incident photon-to-electron conversion efficiency to about 90% across the visible range. Our results demonstrate a great promise in developing high-efficiency graphene-Si solar cells in parallel to the more extensively studied carbon nanotube-Si structures.
The Enhanced Efficiency of Graphene-Silicon Solar Cells by Electric Field Doping.

Xuegong Yu,Lifei Yang,Qingmin Lv,Mingsheng Xu,Hongzheng Chen,Deren Yang

DOI: https://doi.org/10.1039/c4nr06677d

IF: 6.7

2015-01-01

Nanoscale

Abstract:The graphene-silicon (Gr-Si) Schottky junction solar cell has been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the low Gr-Si Schottky barrier height largely limits the power conversion efficiency of Gr-Si solar cells. Here, we demonstrate that electric field doping can be used to tune the work function of a Gr film and therefore improve the photovoltaic performance of the Gr-Si solar cell effectively. The electric field doping effects can be achieved either by connecting the Gr-Si solar cell to an external power supply or by polarizing a ferroelectric polymer layer integrated in the Gr-Si solar cell. Exploration of both of the device architecture designs showed that the power conversion efficiency of Gr-Si solar cells is more than twice of the control Gr-Si solar cells. Our study opens a new avenue for improving the performance of Gr-Si solar cells.
Illumination-Induced Hole Doping for Performance Improvement of Graphene/n-Silicon Solar Cells with P3HT Interlayer

Dikai Xu,Jian He,Xuegong Yu,Dace Gao,Lingling Ma,Xinhui Mu,Mengyao Zhong,Yang Xu,Jichun Ye,Mingsheng Xu,Deren Yang

DOI: https://doi.org/10.1002/aelm.201600516

IF: 6.2

2017-01-01

Advanced Electronic Materials

Abstract:Graphene/silicon (Gr/Si) solar cells have triggered considerable interest for their potential in low‐cost and high‐efficiency photovoltaic applications. However, the performance of Gr/Si solar cells is still limited by poor Gr conductivity and carrier recombination at the interface. In this study, a solution‐processable poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) thin film is employed as a carrier selective interlayer in the graphene and n‐type Si solar cells, which can increase the work function and conductivity of the Gr due to photoinduced p‐type doping under light illumination. Consequently, the Schottky barrier height of the solar cells is enhanced, whereas the carrier recombination at the interface is suppressed. The utilization of antireflection and additional chemical doping at the other side of the Gr layer further improves the performance of the solar cells, which shows a power conversion efficiency of 12.95% with high stability. This study paves a new venue for the development of Gr/Si solar cells toward real applications.
Optimization of Graphene/silicon Heterojunction Solar Cells

Yuxuan Lin,Dan Xie,Yu Chen,Tingting Feng,Qiming Shao,He Tian,Tianling Ren,Xinming Li,Xiao Li,Lili Fan,Kunlin Wang,Dehai Wu,Hongwei Zhu

DOI: https://doi.org/10.1109/pvsc.2012.6318119

2012-01-01

Abstract:Optimization methods, including layer number modulation, graphene work function, and antireflection film addition, are proposed to improve the performance of graphene/semiconductor heterojunction solar cells. Simulation results demonstrate that a maximal conversion efficiency of ~11% can be achieved. Schottky junction solar cells based on modified graphene films and silicon pillar arrays have been fabricated and are found to deliver enhanced cell performance with efficiencies up to 5.5%.
Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization

Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo

DOI: https://doi.org/10.48550/arXiv.2012.03337

2020-12-06

Applied Physics

Abstract:We theoretically study the efficiency limits and performance characteristics of few-layer graphene-semiconductor solar cells (FGSCs) based on a Schottky contact device structure. We model and compare the energy conversion efficiency of various configurations by explicitly considering the non-Richardson thermionic emission across few-layer graphene/semiconductor Schottky heterostructures. The calculations reveal that ABA-stacked trilayer graphene-silicon solar cell exhibits a maximal conversion efficiency exceeding 28\% due to a lower reversed saturation current when compared to that of the ABC-stacking configuration. The thermal coefficients of PCE for ABA and ABC stacking FGSCs are -0.064\%/K and -0.049\%/K, respectively. Our work offers insights for optimal designs of graphene-based solar cells, thus paving a route towards the design of high-performance FGSC for future nanoscale energy converters.
Atomic/Molecular Layer-Deposited Laminated Li 2 O-Lithicone Interfaces Enabling High-Performance Silicon Anodes

Jiabin Fang,Jianguo Li,Lijun Qin,Aidong Li,Hao Feng

DOI: https://doi.org/10.1021/acsami.3c02925

IF: 9.5

2023-06-01

ACS Applied Materials & Interfaces

Abstract:Silicon-based materials are of long-standing interest as the anodes for next-generation lithium-ion batteries, yet their low initial Coulombic efficiency and poor interfacial stability are lethal limitations. In this work, we used atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques to fabricate a lithium-containing laminated Li(2)O-lithicone hybrid film (∼5 nm) on a silicon electrode. The laminated film provides an additional surface Li source around silicon cores,...

materials science, multidisciplinary,nanoscience & nanotechnology

Interface Engineering and Efficiency Improvement of Monolayer Graphene–silicon Solar Cells by Inserting an Ultra-Thin LiF Interlayer

Interface Engineering for Efficient and Stable Chemical-Doping-free Graphene-on-silicon Solar Cells by Introducing a Graphene Oxide Interlayer

Ultra-thin LiF Layer As the Electron Collector for A-Si:H Based Photovoltaic Cell

Inter-atomic diffusion of fluorine and oxygen forming electron-selective extraction for high-efficiency dopant-free silicon solar cells

Interface coupling in graphene/fluorographene heterostructure for high-performance graphene/silicon solar cells

A review on graphene-silicon Schottky junction interface

Interface Engineering of Graphene/silicon Solar Cells by Introducing an Ultrathin Magnesium Oxide Interlayer

Design and Photovoltaic Properties of Graphene/Silicon Solar Cell

High-Performance Ultrathin Organic-Inorganic Hybrid Silicon Solar Cells via Solution-Processed Interface Modification.

Effect of A-Si : H Interface Buffer Layer on the Performance of Hydrogenated Amorphous Silicon Germanium Thin Film Solar Cell

Interface Engineering of Graphene-Silicon Heterojunction Solar Cells

Room-Temperature Processed, Air-Stable And Highly Efficient Graphene/Silicon Solar Cells With An Organic Interlayer

Enhanced Charge Separation by Sieve‐Layer Mediation in High‐Efficiency Inorganic‐Organic Solar Cells

Surface modification and interface engineering to enhance the performance of 2D-graphene/3D-silicon Schottky junction solar cells

An 8.68% Efficiency Chemically-Doped-free Graphene-Silicon Solar Cell Using Silver Nanowires Network Buried Contacts.

Colloidal antireflection coating improves graphene-silicon solar cells.

The Enhanced Efficiency of Graphene-Silicon Solar Cells by Electric Field Doping.

Illumination-Induced Hole Doping for Performance Improvement of Graphene/n-Silicon Solar Cells with P3HT Interlayer

Optimization of Graphene/silicon Heterojunction Solar Cells

Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization

Atomic/Molecular Layer-Deposited Laminated Li 2 O-Lithicone Interfaces Enabling High-Performance Silicon Anodes