Enhancement of the Light Extraction Efficiency of Flip-Chip Light-Emitting Diodes Fabricated on Patterned Silicon Carbide and Sapphire Substrates

Mingsheng Xu,Huayong Xu,Yan Shen,Shuang Qu,Chengxin Wang,Xiaobo Hu,Xiangang Xu

DOI: https://doi.org/10.1109/sslchina.2013.7177357

2013-01-01

Abstract:Total internal reflection (TIR) effect leads to low light extraction efficiency (LEE) of the GaN LEDs on SiC and sapphire substrates. The LEE enhancements of the GaN based flip-chip light-emitting diodes (FC-LEDs) on patterned substrates are investigated by experiments and simulations. The optical output power of the FC-LEDs on patterned SiC substrate increases by 8.15% while the optical output power of the FC-LEDs on patterned sapphire substrate improves 48% from the experimental results. According to the simulation data, the LEE enhancements of the FC-LEDs on patterned SiC and sapphire substrates cause the improvements of the light output power.