Abstract:Precise fabrication of semiconducting channel materials into densely-aligned uniformly parallel arrays is one prerequisite to the high-performance ultra-scaled technology nodes, in particular for carbon nanotubes (CNTs). Traditional thin-film-based approaches generally yield CNTs in irregularly-spaced bundles or with wide orientation distribution, and lack a mechanism to effectively eliminate mis-aligned CNTs from the ultra-scaled channel area. Therefore, the averaged pitch value and precision of CNT arrays, the key parameters defining lateral CNT spacing, fail to simultaneously meet all of the patterning requirements for the ultra-scaled technology nodes. Bio-fabrication is promising for patterning CNTls at a resolution beyond the existing lithographic limit. However, impacted by surface charges and sub-micron dimensions of typical bio-templates, current bio-templated electronics exhibit both poor transport performance and array uniformity smaller than 1 micron. We report precise scaling of inter-CNT pitch using a supramolecular assembly method called Spatially Hindered Integration of Nanowire Electronics (SHINE). Specifically, by using nano-trenches to align CNTs and DNA hybridization to stabilize them in place, we constructed parallel CNT arrays with uniform pitch as small as 10.4 nm, at an assembly yield over 95%. The pitch precision improves on that prepared from conventional thin-film approaches by more than two orders of magnitude. Compared to the lithography-patterned Si channels at 10 nm technology node, SHINE simultaneously provides both 70% smaller averaged pitch value and molecular-scale pitch precision in the channel area. By engineering the interfacial compositions, metal ions and surface charges that are destructive to FET performance have been excluded from the channel area without degrading CNT alignment. Under a source-to-drain voltage of -0.5 V, we demonstrate both transconductance more than 0.6 mS/μm with fast on/off switching. And the key FET performance metrics are improved by more than one order of magnitude than previous bio-templated FETs. Furthermore, we demonstrate centimeter-scale alignment of fixed-width CNT arrays. At the interface of high-performance electronics and bio-molecular self-assembly, precise bio-fabrication could provide ultra-scaled devices or circuits compatible with or sensitive to local biological environments.

Assembly of Carbon Nanotube Devices by Tip-Induced Optical Trapping

Monolithic three-dimensional integration of aligned carbon nanotube transistors for high-performance integrated circuits

A Nanoscale Technique Of The Assembly Approach For Inas Nanowire Nano Device

Efficient Fabrication of Carbon Nanotube Micro Tip Arrays by Tailoring Cross-Stacked Carbon Nanotube Sheets.

Carbon Nanotube Technology For Solid State And Vacuum Electronics

Dielectrophoretic Assembly of Carbon Nanotube Chains in Aqueous Solution

Dielectrophoretic assembly of carbon-based nanomaterials

Self-aligned Electrodes for Suspended Carbon Nanotube Structures

(Invited) DNA-Directed High-Precision Assembly of CNT FETs

Carbon Nanotube Displays

Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Trapping and aligning carbon nanotubes via substrate geometry engineering

DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors

Facile manipulation of individual carbon nanotubes assisted by inorganic nanoparticles.

Acoustic-assisted assembly of an individual monochromatic ultralong carbon nanotube for high on-current transistors.

Carbon Nanotube Integrated Circuit Technology: Purification, Assembly and Integration

Advances in Precise Structure Control and Assembly toward the Carbon Nanotube Industry

A combination of capillary assembly and dielectrophoresis for wafer scale integration of carbon nanotubes-based electrical and mechanical devices

Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.

High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly