Lateral photo-dember effect in graphene

changhua liu,youchia chang,seunghyun lee,yafei zhang,theodore b norris,zhaohui zhong

DOI: https://doi.org/10.1364/cleo_qels.2015.ftu4b.3

2015-01-01

Abstract:The photocurrent at graphene/metal junctions under femtosecond laser excitation is found to have its polarity fully determined by asymmetry in the electron-hole mobility; this suggests the existence of unexpected lateral photo-Dember effect in graphene.

What problem does this paper attempt to address?

Polarization dependence of photocurrent in a metal-graphene-metal device

Minjung Kim,Ho Ang Yoon,Seungwoo Woo,Duhee Yoon,Sang Wook Lee,Hyeonsik Cheong

DOI: https://doi.org/10.1063/1.4745787

2012-07-31

Abstract:The dependence of the photocurrent generated in a Pd/graphene/Ti junction device on the incident photon polarization is studied. Spatially resolved photocurrent images were obtained as the incident photon polarization is varied. The photocurrent is maximum when the polarization direction is perpendicular to the graphene channel direction and minimum when the two directions are parallel. This polarization dependence can be explained as being due to the anisotropic electron-photon interaction of Dirac electrons in graphene.

Mesoscale and Nanoscale Physics
Asymmetry Allows Photocurrent in Intrinsic Graphene.

Jianbo Yin,Hailin Peng

DOI: https://doi.org/10.1038/s41565-019-0368-3

IF: 38.3

2019-01-01

Nature Nanotechnology

Abstract:The asymmetry of electron–hole diffusion velocities in intrinsic graphene can give rise to efficient photocurrent generation.
Intrinsic and extrinsic photogalvanic effects in twisted bilayer graphene

Fernando Peñaranda,Hector Ochoa,Fernando de Juan

2024-02-13

Abstract:The chiral lattice structure of twisted bilayer graphene with D6 symmetry allows for intrinsic photogalvanic effects only at off-normal incidence, while additional extrinsic effects are known to be induced by a substrate or a gate potential. In this work, we first compute the intrinsic effects and show they reverse sign at the magic angle, revealing a band inversion at the {\Gamma} point. We next consider different extrinsic effects, showing how they can be used to track the strengths of the substrate coupling or displacement field. We also show that the approximate particle-hole symmetry implies stringent constraints on the chemical potential dependence of all photocurrents. A detailed comparison of intrinsic vs. extrinsic photocurrents therefore reveals a wealth of information about the band structure and can also serve as a benchmark to constrain the symmetry breaking patterns of correlated states.

Mesoscale and Nanoscale Physics
Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Shruti Subramanian,Quinn T. Campbell,Simon Moser,Jonas Kiemle,Philipp Zimmermann,Paul Seifert,Florian Sigger,Deeksha Sharma,Hala Al-Sadeg,Michael Labella III,Dacen Waters,Randall M. Feenstra,Roland J. Koch,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Ismaila Dabo,Alexander Holleitner,Thomas E. Beechem,Ursula Wurstbauer,Joshua A. Robinson

DOI: https://doi.org/10.48550/arXiv.2006.14689

2020-06-26

Abstract:Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.

Applied Physics,Materials Science
Photo-induced free radical modification of graphene.

Liming Zhang,Lin Zhou,Mingmei Yang,Zhirong Liu,Qin Xie,Hailin Peng,Zhongfan Liu

DOI: https://doi.org/10.1002/smll.201203152

IF: 13.3

2013-01-01

Small

Abstract:Graphene has stimulated enormous interest due to its intriguing structure and fascinating properties. The extremely high carrier mobility, mechanical flexibility, and optical transparency as well as the versatility for band structure engineering make graphene a promising candidate for next-generation carbon-based electronic devices. Graphene chemistry, the covalent functionalization of graphene as a 2D giant molecule, offers a promising direction to controllably tailor its properties through the introduction of various chemical decorations. One of the great challenges for graphene functionalization originates from its strong chemical stability, thus highly reactive chemical species are needed as the reactants. In recent years, novel photochemical approaches have been developed to achieve efficient graphene modification and bandgap modulation, following a general concept of Photochemical Bandgap Engineering of Graphene. In this article, such kinds of photochemical graphene engineering are demonstrated, together with a brief discussion on the future directions, challenges, and opportunities in this fascinating research area.
Photoresponse in Graphene Induced by Defect Engineering

Ruxia Du,Wenhui Wang,Jianxin Du,Xitao Guo,Er Liu,Dan Bing,Jing Bai

DOI: https://doi.org/10.7567/apex.9.115101

IF: 2.819

2016-01-01

Applied Physics Express

Abstract:We present a photoresponse study on a lateral defect/pristine graphene junction device fabricated by a simple plasma irradiation method. The junction between pristine graphene and plasma-modified graphene was created by controlling the location of Ar+ plasma treatment. We found that a distinct photocurrent was generated at the junction by photocurrent line scanning measurements, and further analysis reveals that the photo-thermoelectric (PTE) effect, instead of the photovoltaic (PV) effect, dominates the photocurrent generation at the interface. Additionally, the obtained results suggest that tuning the defect density could be effective in modulating the optoelectronic performance of junctions in our device.
Organic thin film thickness-dependent photocurrents polarity in graphene heterojunction phototransistor

Meiyu He,Jiayue Han,Xingwei Han,Jun Gou,Ming Yang,Zhiming Wu,Yadong Jiang,Jun Wang

DOI: https://doi.org/10.1016/j.carbon.2021.03.024

IF: 10.9

2021-06-01

Carbon

Abstract:To overcome the weak absorption deficiency of 2D materials, combining bilayer/bulk heterojunction and 2D materials in a photoconductive framework facilitates the separation and transfer of photo-generated carriers for prominent performance photo-detector. Nevertheless, apart from improving the inferior built-in electric field, the multilayer device may suffer a low efficiency due to depletion loss considering the effective exciton length limitation. Here, we demonstrate the thickness-dependent photocurrent polarity based on a bilayer enhanced graphene/C60/ZnPc phototransistor. A fast response time down to 7.29 μs and a responsivity of 6537 A/W are achieved in the device with the help of type-II band alignment and valid interfaces between organic layers. Moreover, three controlled thicknesses of intermediate charge transfer layer are investigated for the purpose of probing the transfer direction in multilayer heterojunction, which suggests that the photocurrent polarity is highly related to the thickness of C60 and even input optical power density. Owing to the phenomena of photocurrents polarity, a distinct bending curve of responsivity-power density relation is observed near the positive-negative altering point compared to general logarithm linear relation in most photoconductive devices. Our results may enable further exploration of charge transfer mechanism in multilayer system and development of high speed photoconductive transistor.

materials science, multidisciplinary,chemistry, physical
Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction.

Youwei Zhang,Hemei Zheng,Qiyuan Wang,Chunxiao Cong,Laigui Hu,Pengfei Tian,Ran Liu,Shi-Li Zhang,Zhi-Jun Qiu

DOI: https://doi.org/10.1002/smll.201800691

IF: 13.3

2018-01-01

Small

Abstract:Graphene is characterized by demonstrated unique properties for potential novel applications in photodetection operated in the frequency range from ultraviolet to terahertz. To date, detailed work on identifying the origin of photoresponse in graphene is still ongoing. Here, scanning photocurrent microscopy to explore the nature of photocurrent generated at the monolayer-multilayer graphene junction is employed. It is found that the contributing photocurrent mechanism relies on the mismatch of the Dirac points between the monolayer and multilayer graphene. For overlapping Dirac points, only photothermoelectric effect (PTE) is observed at the junction. When they do not coincide, a different photocurrent due to photovoltaic effect (PVE) appears and becomes more pronounced with larger separation of the Dirac points. While only PTE is reported for a monolayer-bilayer graphene junction in the literature, this work confirms the coexistence of PTE and PVE, thereby extending the understanding of photocurrent in graphene-based heterojunctions.
Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Yuxuan Lin,Qiong Ma,Pin-Chun Shen,Batyr Ilyas,Yaqing Bie,Albert Liao,Emre Ergeçen,Bingnan Han,Nannan Mao,Xu Zhang,Xiang Ji,Yuhao Zhang,Jihao Yin,Shengxi Huang,Mildred Dresselhaus,Nuh Gedik,Pablo Jarillo-Herrero,Xi Ling,Jing Kong,Tomás Palacios

DOI: https://doi.org/10.1126/sciadv.aav1493

IF: 13.6

2019-06-07

Science Advances

Abstract:The broadband photothermoelectric effect has been studied on a graphene-2D semiconductor lateral heterojunction.

multidisciplinary sciences
Electric imaging and dynamics of photo-charged graphene edge

Zhe Ding,Zhousheng Chen,Xiaodong Fan,Weihui Zhang,Jun Fu,Yumeng Sun,Zhi Cheng,Zhiwei Yu,Kai Yang,Yuxin Li,Xing Liu,Pengfei Wang,Ya Wang,Jianhua Jiang,Hualing Zeng,Changgan Zeng,Guosheng Shi,Fazhan Shi,Jiangfeng Du

2024-09-23

Abstract:The one-dimensional side gate based on graphene edges shows a significant capability of reducing the channel length of field-effect transistors, further increasing the integration density of semiconductor devices. The nano-scale electric field distribution near the edge provides the physical limit of the effective channel length, however, its imaging under ambient conditions still lacks, which is a critical aspect for the practical deployment of semiconductor devices. Here, we used scanning nitrogen-vacancy microscopy to investigate the electric field distribution near edges of a single-layer-graphene. Real-space scanning maps of photo-charged floating graphene flakes were acquired with a spatial resolution of $\sim$ 10 nm, and the electric edge effect was quantitatively studied by analyzing the NV spin energy level shifts due to the electric Stark effect. Since the graphene flakes are isolated from external electric sources, we brought out a theory based on photo-thermionic effect to explain the charge transfer from graphene to oxygen-terminated diamond probe with a disordered distribution of charge traps. Real-time tracing of electric fields detected the photo-thermionic emission process and the recombination process of the emitted electrons. This study provides a new perspective for graphene-based one-dimensional gates and opto-electronics with nanoscale real-space imaging, and moreover, offers a novel method to tune the chemical environment of diamond surfaces based on optical charge transfer.

Mesoscale and Nanoscale Physics,Quantum Physics
Photocurrent generation at ABA/ABC lateral junction in tri-layer graphene photodetector

Minjung Kim,Seon-Myeong Choi,Ho Ang Yoon,Sun Keun Choi,Jae-Ung Lee,Jungcheol Kim,Sang Wook Lee,Young-Woo Son,Hyeonsik Cheong

DOI: https://doi.org/10.1016/j.carbon.2015.09.095

2015-09-29

Abstract:Metal-graphene-metal photodetectors utilize photocurrent generated near the graphene/metal junctions and have many advantages including high speed and broad-band operation. Here, we report on photocurrent generation at ABA/ABC stacking domain junctions in tri-layer graphene with a responsivity of 0.18 A/W. Unlike usual metal-graphene-metal devices, the photocurrent is generated in the middle of the graphene channel, not confined to the vicinity of the metal electrodes. The magnitude and the direction of the photocurrent depend on the back-gate bias. Theoretical calculations show that there is a built-in band offset between the two stacking domains, and the dominant mechanism of the photocurrent is the photo-thermoelectric effect due to the Seebeck coefficient difference.

Mesoscale and Nanoscale Physics
Plasmon Excited Ultrahot Carriers and Negative Differential Photoresponse in a Vertical Graphene van der Waals Heterostructure.

Lingfei Li,Wei Liu,Anyuan Gao,Yaolong Zhao,Qin Lu,Li Yu,Junzhuan Wang,Linwei Yu,Lei Shao,Feng Miao,Yi Shi,Yang Xu,Xiaomu Wang

DOI: https://doi.org/10.1021/acs.nanolett.9b00908

IF: 10.8

2019-01-01

Nano Letters

Abstract:Photogenerated nonequilibrium hot carriers play a key role in graphene's intriguing optoelectronic properties. Compared to conventional photoexcitation, plasmon excitation can be engineered to enhance and control the generation and dynamics of hot carriers. Here, we report an unusual negative differential photoresponse of plasmon-induced "ultrahot" electrons in a graphene-boron nitride-graphene tunneling junction. We demonstrate nanocrescent gold plasmonic nanostructures that substantially enhance the absorption of long-wavelength photons whose energy is greatly below the tunneling barrier and significantly boost the electron thermalization in graphene. We further analyze the generation and transfer of ultrahot electrons under different bias and power conditions. We find that the competition among thermionic emission, the carrier-cooling effect, and the field effect results in a hitherto unusual negative differential photoresponse in the photocurrent-bias plot. Our results not only exemplify a promising platform for detecting low-energy photons, enhancing the photoresponse, and reducing the dark current but also reveal the critically coupled pathways for harvesting ultrahot carriers.
Reversed Photoeffect in Transparent Graphene Nanocapacitors

A. Belkin,E. Ilin,I. Burkova,A. Bezryadin

DOI: https://doi.org/10.1021/acsaelm.9b00659

2020-11-20

Abstract:Electronic properties of ultrathin dielectric films consistently attract much attention since they play important roles in various electronic devices, such as field effect transistors and memory elements. Insulating properties of the gate oxide in transistors represent the key factor limiting Moore's law. The dielectric strength of the insulating film limits how much energy can be stored in nanocapacitors. The origin of the electric current in the nanometer-scale insulating barrier remains unexplained. Here we present an optically transparent Al-Al2O3-graphene nanocapacitor suitable for studying electronic transport in calibrated nanoscale dielectric films under high electric fields and with light exposure. The controllable flow of photons provides an additional powerful probe helping to resolve the puzzle of the electric conductivity in these high-quality insulating films. The dielectric alumina, Al2O3, is deposited by atomic layer deposition technology. With this device we observe a photon-assisted field emission effect, in which the effective barrier height is reduced by a quantity equal to the photon energy. Our main finding is a reversed photoeffect. Namely, at sufficiently high bias voltages the current through the dielectric film decreases as the light intensity increases. Moreover, higher photon energies correlate with stronger decreases of the current. To explain this reversed photoeffect, we present a qualitative model based on a conjecture that electrons leak into the dielectric and form charged sandpile-like branching patterns, which facilitate transport, and which can be dispersed by light.

Mesoscale and Nanoscale Physics
The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Jorge Quereda,Jan Hidding,Talieh S. Ghiasi,Bart J. van Wees,Caspar H. van der Wal,Marcos H.D. Guimaraes

DOI: https://doi.org/10.48550/arXiv.2008.09023

2020-08-20

Abstract:Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence.

Materials Science,Mesoscale and Nanoscale Physics
On the Photo‐Carriers Dynamic Regulation by Piezo‐Phototronic Effect in Metal‐Oxide–Semiconductor Tunneling Junction

Yitong Wang,Wenbo Peng,Zihao Huang,Danyang Huang,Wanli Xie,Fangpei Li,Yongning He

DOI: https://doi.org/10.1002/admi.202300047

IF: 5.4

2023-04-20

Advanced Materials Interfaces

Abstract:PEDOT:PSS/Al2O3/n‐ZnO tri‐layer metal‐oxide–semiconductor structure on rigid ITO/glass substrate and flexible ITO/PET substrate are prepared and the effect of positive and negative piezo‐charges on the tunneling characteristics of metal‐oxide–semiconductor structures at forward and reverse bias is systematically investigated. This work provides an in‐depth understanding for the piezo‐phototronic effect on the Fowler–Nordheim tunneling mechanism. The piezo‐phototronic effect can modulate the dynamics of photo‐generated carriers by utilizing external‐strain–induced piezoelectric charges (piezo‐charges). Most of the current researches focus on the modulation effect on the optoelectronic properties of p–n junctions. There are only a few studies focusing on the metal‐oxide–semiconductor (MOS) structures. In this work, a PEDOT:PSS/Al2O3/n‐ZnO tri‐layer MOS tunneling junction is fabricated and the piezo‐phototronic effect on its photo‐carriers dynamic and performances is systematically investigated. The photoresponsivity to 365 nm laser illumination is reduced because of the negative piezo‐charges generated at the Al2O3/n‐ZnO interface. Meanwhile but unexpectedly, the similar phenomenon utilizing the positive piezo‐charges at the Al2O3/n‐ZnO interface is observed. The in‐depth working mechanisms are carefully investigated by analyzing the effect of piezo‐charges on the energy band diagram. Strain induced piezo‐charges could feasibly adjust the intermediate oxide layer's barrier height and width so that the tunneling effect can be efficiently modulated by the piezo‐phototronic effect, leading to the effective control over the MOS tunneling junction's photo‐carriers dynamic and corresponding photoresponses. This work provides an in‐depth understanding for the piezo‐phototronic effect on the MOS tunneling junction and provides guidance for the subsequent researches on the coupling of piezo‐phototronic effect and tunneling effect.

materials science, multidisciplinary,chemistry
Gate-modulated photoresponse in graphene field-effect transistors

Zijun Wei,Zhigang Wang,Huabo Zhao,Tianyang Ye,Liming Ren,Jian Guo,Yuehui Jia,Zhaohui Zhang,Yunyi Fu,Ru Huang,Xing Zhang

DOI: https://doi.org/10.1149/05201.1033ecst

2013-01-01

ECS Transactions

Abstract:In this paper, we have investigated the photoresponse in a graphene field-effect transistor (FET). We find that significant photocurrents can be detected when the device is illuminated by a laser beam (lambda = 633nm). The back-gate can effectively modulate the magnitude and direction of the photocurrent. The possible reasons have been qualitatively analyzed. Our results will provide a better understanding of the electric field distribution in graphene devices, and may also be helpful to find a new way to realize the graphene-based photodetectors.
High-quality lateral monolayer-multilayer graphene junction formed by selective laser thinning for self-powered photodetection

Weijia Tang,Xiaowen Zhu,Jiaxin Huang,Su Wu,Qiyang Song,Butian Zhang,Zemin Zhang,Youwei Zhang,Shun Wang

DOI: https://doi.org/10.1088/1361-6528/ad5208

IF: 3.5

2024-06-01

Nanotechnology

Abstract:The formation of an asymmetric junction is key to graphene-based photodetectors of high-sensitive photodetectability, because such a junction can not only facilitate the diffusion or drift of photogenerated carriers but also realize a self-powered operation. Here, a monolayer-multilayer graphene junction photodetector is accomplished by selectively thinning part of a multilayer graphene to a high-quality monolayer. Benefiting from the large photoabsorption cross section of multilayer graphene and strong asymmetry caused by the significant differences in optoelectronic properties between monolayer and multilayer graphene, the monolayer-multilayer graphene junction shows a 7-fold increase in short-circuit photocurrent as compared with that at the monolayer graphene-metal contact in scanning photocurrent images. The asymmetric configuration also enables the photodetector to work at zero bias with minimized dark current noise and stand-by power consumption. Under global illumination with visible light, a photoswitching ratio of 3.4 × 10 3 , a responsivity of 8.8 mA/W, a specific detectivity of 1.3×10 8 Jones and a response time of 11 ns can be obtained, suggesting a promising photoresponse. Moreover, it is worth mentioning that such a performance enhancement is achieved without compromising the broadband spectral response of graphene photodetector and it is hence applicable for long wavelength spectral range including infrared and terahertz.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied
Enhancement of Photocurrent in Suspended Monolayer Graphene

Jianhong Song,Xin Gong,Pai Peng,Zidong Wang,Zhijia Tian,Yuehui Jia,Liming Ren,Yuzhuo Fu

DOI: https://doi.org/10.1109/icsict.2016.7999052

2016-01-01

Abstract:The photocurrent in graphene has drawn much attention in recent years. The mechanisms of its production vary in different situations, such as at the interfaces of monolayer-bilayer junction or p-n junction. Here we demonstrate photocurrent generation in graphene-based field-effect transistors (GFETs) with a partially suspended area. Both Raman and photocurrent mapping were performed after a laser-induced doping under vacuum at room temperature. The resulting photocurrent in the suspended area is an order of magnitude larger than that in the supported area. The difference in photocurrent may be attributed to the thermoelectric effect.
New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

Dong Sun,Grant Aivazian,Aaron M. Jones,Wang Yao,David Cobden,Xiaodong Xu

DOI: https://doi.org/10.48550/arXiv.1108.3360

2011-08-17

Abstract:The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measurements yield a photocurrent response time of ~1.5 ps at room temperature increasing to ~4 ps at 20 K. Combined with the negligible dependence of photocurrent amplitude on environmental temperature this implies that hot carriers rather than phonons dominate energy transport at high frequencies. Gate-dependent pump-probe measurements demonstrate that both thermoelectric and built-in electric field effects contribute to the photocurrent excited by laser pulses. The relative weight of each contribution depends on the junction configuration. A single laser beam excitation also displays multiple polarity-reversals as a function of carrier density, a signature of impact ionization. Our results enhance the understanding of non-equilibrium electron dynamics, electron-electron interactions, and electron-phonon interactions in graphene. They also determine fundamental limits on ultrafast device operation speeds (~500 GHz) for potential graphene-based photon detection, sensing, and communication.

Mesoscale and Nanoscale Physics
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions

Sabin Park,Rai Moriya,Yijin Zhang,Kenji Watanabe,Takashi Taniguchi,Tomoki Machida

2024-08-22

Abstract:Graphene is known to exhibit a pronounced photo-thermoelectric effect (PTE) in its in-plane carrier transport and attracting attention toward various optoelectronic applications. In this study, we demonstrate an out-of-plane PTE by utilizing electron tunneling across a barrier, namely, the tunneling photo-thermoelectric effect (TPTE). This was achieved in a monolayer graphene (MLG)/bilayer hexagonal boron nitride (h-BN)/bilayer graphene (BLG) asymmetric tunnel junction. MLG and BLG exhibit different cyclotron resonance (CR) optical absorption energies when their energies are Landau quantized under an out-of-plane magnetic field. We tuned the magnetic field under mid-infrared (MIR) irradiation to bring MLG into CR conditions, whereas BLG was not in CR. The CR absorption in the MLG generates an electron temperature difference between the MLG and BLG, and induces an out-of-plane TPTE voltage across the h-BN tunnel barrier. The TPTE exhibited a unique dependence on the Fermi energy of the MLG, which differed from that of the in-plane PTE of the MLG. The TPTE signal was large when the Fermi energy of the MLG was tuned near the phase transition between the quantum Hall state (QHS) and non-QHS, that is, the transition between carrier localization and delocalization. The TPTE provides another degree of freedom for probing the electronic and optoelectronic properties of two-dimensional material heterostructures.

Mesoscale and Nanoscale Physics

Lateral photo-dember effect in graphene

Polarization dependence of photocurrent in a metal-graphene-metal device

Asymmetry Allows Photocurrent in Intrinsic Graphene.

Intrinsic and extrinsic photogalvanic effects in twisted bilayer graphene

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Photo-induced free radical modification of graphene.

Photoresponse in Graphene Induced by Defect Engineering

Organic thin film thickness-dependent photocurrents polarity in graphene heterojunction phototransistor

Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction.

Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Electric imaging and dynamics of photo-charged graphene edge

Photocurrent generation at ABA/ABC lateral junction in tri-layer graphene photodetector

Plasmon Excited Ultrahot Carriers and Negative Differential Photoresponse in a Vertical Graphene van der Waals Heterostructure.

Reversed Photoeffect in Transparent Graphene Nanocapacitors

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

On the Photo‐Carriers Dynamic Regulation by Piezo‐Phototronic Effect in Metal‐Oxide–Semiconductor Tunneling Junction

Gate-modulated photoresponse in graphene field-effect transistors

High-quality lateral monolayer-multilayer graphene junction formed by selective laser thinning for self-powered photodetection

Enhancement of Photocurrent in Suspended Monolayer Graphene

New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions