Abstract:Negative photoconductivity monolayer graphene photodetectors are fabricated by chemical vapor deposition, and positive photoconductivity photodetectors are realized by perovskite FAPbI3 quantum dots with a simple and cost‐effective non‐polar solvent synthesis method on the graphene surface. The combination of photodetectors with negative photoconductivity and positive photoconductivity effects can be simultaneously applied on a chip that benefits future intelligent Internet of Things systems. Low‐dimensional devices with different photoconductive effects attract much attention in optoelectronics. In this work, negative photoconductivity (NPC) monolayer graphene photodetectors are fabricated by chemical vapor deposition (CVD), and a positive photoconductivity (PPC) photodetector is realized by decorating perovskite FAPbI3 quantum dots prepared by a simple and cost‐effective non‐polar solvent synthesis method on a graphene surface. The graphene‐based photodetector exhibits an NPC characteristic, which is attributed to the absorption and desorption of water molecules on the graphene surface. The responsivity of the photodetector with an NPC characteristic is −0.86 A W−1 under intense ultraviolet light irradiation, and the detectivity is −2.45 × 109 Jones. The FAPbI3 quantum dots/graphene photodetector with a PPC feature has a responsivity of 8.03 A W−1 and a detectivity of 1.89 × 1010 Jones under the irradiation of ultraviolet light of 365 nm and 55.3 mW cm−2 intensity. Due to the intense light absorption of perovskite combined with the extremely high mobility of graphene, photodetectors have high exciton separation and photocurrents when the devices are irradiated by ultraviolet light. Individual photodetectors are successfully created with NPC and PPC effects; the critical analysis for the different photoconductive mechanisms is provided, which will benefit the development of future multifunctional systems.

Photocurrent generation at ABA/ABC lateral junction in tri-layer graphene photodetector

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

High-quality lateral monolayer-multilayer graphene junction formed by selective laser thinning for self-powered photodetection

Integrated high responsivity photodetectors based on graphene/glass hybrid waveguide.

Photocurrent in Bismuth Junctions with Graphene

Ambipolar Plasmon‐Enhanced Photodetector Built on Germanium Nanodots Array/Graphene Hybrid

Gate-tunable and high responsivity graphene phototransistors on undoped semiconductor substrates

High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes

Organic thin film thickness-dependent photocurrents polarity in graphene heterojunction phototransistor

High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes

Graphene-Quantum Dot Hybrid Photodetectors with Low Dark-Current Readout

An enhanced ultrasensitive solar-blind UV photodetector based on an asymmetric Schottky junction designed with graphene/β-Ga2O3/Ag

Enhanced Photogating Effect in Graphene Photodetectors Via Potential Fluctuation Engineering.

Gate-enhanced Broadband Photodetection Based on Cd3As2/graphene Dirac Heterojunctions

Multifunctional and High‐Performance FAPBI3 Quantum Dots/Graphene UV Photodetectors by the Modulation of Photoconductivity

Highly efficient tunable photodetector with a bipolar response in van der Waals heterojunctions

Gate voltage induced injection and shift currents in AA- and AB-stacked bilayer graphene

Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction.

Electrochemical half-reaction-assisted sub-bandgap photon sensing in a graphene hybrid phsotodetector

Superionic Modulation of Polymethylmethacrylate-Assisted Suspended Few-Layer Graphene Nanocomposites for High-Performance Photodetectors.

Highly Sensitive Broadband Single‐Walled Carbon Nanotube Photodetectors Enhanced by Separated Graphene Nanosheets