Asymmetry Allows Photocurrent in Intrinsic Graphene.

Jianbo Yin,Hailin Peng

DOI: https://doi.org/10.1038/s41565-019-0368-3

IF: 38.3

2019-01-01

Nature Nanotechnology

Abstract:The asymmetry of electron–hole diffusion velocities in intrinsic graphene can give rise to efficient photocurrent generation.

What problem does this paper attempt to address?

Epitaxial Growth of Asymmetrically-Doped Bilayer Graphene for Photocurrent Generation

Yu Zhou,Kai Yan,Di Wu,Shuli Zhao,Li Lin,Li Jin,Lei Liao,Huan Wang,Qiang Fu,Xinhe Bao,Hailin Peng,Zhongfan Liu

DOI: https://doi.org/10.1002/smll.201303696

IF: 13.3

2014-01-01

Small

Abstract:An asymmetrically doped bilayer graphene is grown by modulation-doped chemical vapor deposition, which consists of one intrinsic layer and one nitrogen-doped layer according to AB stacking. The asymmetrically doped bilayer crystalline profile is found to extend the identical registry as adjacent pristine bilayer region, thus forming single-crystalline bilayer graphene p-n junctions. Efficient photocurrent with responsivity as high as 0.2 mA/W is generated at the bilayer p-n junctions via a hot carrier-assisted mechanism.
Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Jinwei Wei,Bo Liang,Qingpeng Cao,Hangxu Ren,Youming Zheng,Xuesong Ye

DOI: https://doi.org/10.1016/j.carbon.2019.09.038

IF: 10.9

2020-01-01

Carbon

Abstract:Asymmetric transfer characteristics and hysteresis behaviors are two puzzling electronic transport properties in graphene field effect transistor (GFET). Herein, we presented systematic investigations on these phenomena by varying gate voltage sweeping rates and testing chemical atmospheres. Three different doping mechanisms for GFET were proposed to illustrate these behaviors: electric field doping, molecule chemical doping, and electrochemical doping by redox reactions. In ambient environment, the plateau's emergence in asymmetric transfer curve of GFET was attributed to the counteraction between n-type electric field doping and p-type O2/H2O electrochemical doping. The hysteresis effect difference in backward sweeping varied as a function of gate voltage sweeping rate, which has been offered a qualitative explanation in the context of thermodynamics and kinetics. In NH3, the degree of hysteresis effect in GFET increased with the vapor concentration rising up, while NO2 atmosphere induced opposite behavior. Generally, the interplay of the three doping mechanisms accounts for the total Fermi level modulation and carrier migration behavior near the Dirac point. For instance, the electrochemical doping could occur spontaneously because the electric effect doping or chemical doping raised the graphene Fermi level high enough with respect to the electrochemical O2/H2O redox potential.
Photo-Nernst Current in Graphene

Helin Cao,Grant Aivazian,Zaiyao Fei,Jason Ross,David H. Cobden,Xiaodong Xu

DOI: https://doi.org/10.1038/nphys3549

IF: 19.684

2015-01-01

Nature Physics

Abstract:Photocurrent measurements provide a powerful means of studying the spatially resolved optoelectronic and electrical properties of a material or device. Generally speaking there are two classes of mechanism for photocurrent generation: those involving separation of electrons and holes, and thermoelectric effects driven by electron temperature gradients. Here we introduce a new member in the latter class: the photo-Nernst effect. In graphene devices in a perpendicular magnetic field we observe photocurrent generated uniformly along the free edges, with opposite sign at opposite edges. The signal is antisymmetric in field, shows a peak versus gate voltage at the neutrality point flanked by wings of opposite sign at low fields, and exhibits quantum oscillations at higher fields. These features are all explained by the Nernst effect associated with laser-induced electron heating. This photo-Nernst current provides a simple and clear demonstration of the Shockley-Ramo nature of long-range photocurrent generation in a gapless material.
Lateral photo-dember effect in graphene

changhua liu,youchia chang,seunghyun lee,yafei zhang,theodore b norris,zhaohui zhong

DOI: https://doi.org/10.1364/cleo_qels.2015.ftu4b.3

2015-01-01

Abstract:The photocurrent at graphene/metal junctions under femtosecond laser excitation is found to have its polarity fully determined by asymmetry in the electron-hole mobility; this suggests the existence of unexpected lateral photo-Dember effect in graphene.
Selectively Enhanced Photocurrent Generation in Twisted Bilayer Graphene with Van Hove Singularity.

Jianbo Yin,Huan Wang,Han Peng,Zhenjun Tan,Lei Liao,Li Lin,Xiao Sun,Ai Leen Koh,Yulin Chen,Hailin Peng,Zhongfan Liu

DOI: https://doi.org/10.1038/ncomms12378

IF: 16.6

2016-01-01

Nature Communications

Abstract:Nature Communications 7: Article numbber:10699 (2015); Published: 7 March 2016; Updated: 19 July 2016. Technical support for this Article was not fully acknowledged. The Acknowledgements should have included the following: We are also grateful to Dr Alexei Barinov for his kind help during our beamtime at the spectramicroscopy beamline of the Elettra synchrotron.
Largely Enhanced Photogalvanic Effects in a Phosphorene Photodetector by Strain-Increased Device Asymmetry

Juan Zhao,Yibin Hu,Yiqun Xie,Lei Zhang,Yin Wang

DOI: https://doi.org/10.1103/physrevapplied.14.064003

IF: 4.6

2020-12-01

Physical Review Applied

Abstract:The photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of an open-circuit voltage that is much larger than the bandgap, making it rather attractive in solar cells. However, the magnitude of the PGE photocurrent is usually small, which severely hampers its practical application. Here we propose a mechanism to largely enhance the PGE photocurrent by mechanical strain based on the quantum transport simulations for the two-dimensional nickel-phosphorene-nickel photodetector. A broadband PGE photocurrent governed by the Cs noncentrosymmetry is generated at zero bias under the illumination of linearly polarized light. The photocurrent depends linearly on the device asymmetry, while nonlinearly on the optical absorption. By applying the appropriate mechanical tension stress on the phosphorene, the photocurrent can be substantially enhanced by up to 3 orders of magnitude, which is primarily ascribed to the largely increased device asymmetry. The change in the optical absorption in some cases can also play a critical role in tuning the photocurrent due to the nonlinear dependence. Moreover, the photocurrent can be even further enhanced by mechanical bending, mainly owing to the considerably enhanced device asymmetry. Our results reveal the dependence of the PGE photocurrent on the device asymmetry and absorption in the transport process through a device, and also explore the potential of the PGE in self-powered low-dimensional flexible optoelectronics and low-dimensional photodetections with high photoresponsivity.

physics, applied
Enhancement of Photocurrent in Suspended Monolayer Graphene

Jianhong Song,Xin Gong,Pai Peng,Zidong Wang,Zhijia Tian,Yuehui Jia,Liming Ren,Yuzhuo Fu

DOI: https://doi.org/10.1109/icsict.2016.7999052

2016-01-01

Abstract:The photocurrent in graphene has drawn much attention in recent years. The mechanisms of its production vary in different situations, such as at the interfaces of monolayer-bilayer junction or p-n junction. Here we demonstrate photocurrent generation in graphene-based field-effect transistors (GFETs) with a partially suspended area. Both Raman and photocurrent mapping were performed after a laser-induced doping under vacuum at room temperature. The resulting photocurrent in the suspended area is an order of magnitude larger than that in the supported area. The difference in photocurrent may be attributed to the thermoelectric effect.
Enhanced Ionic Photocurrent Generation Through a Homogeneous Graphene Derivative Composite Membrane

Yanbing Zhang,Guoke Zhao,Hongwei Zhu,Lei Jiang

DOI: https://doi.org/10.1039/d0cc04204h

IF: 4.9

2020-01-01

Chemical Communications

Abstract:We report an enhanced light-harvesting two-dimensional nanofluidic system based on a homogeneous graphene derivative nanocomposite membrane, and demonstrate an enhanced proton flow upon asymmetric light illumination. The maximum photocurrent is achieved by appropriately sandwiching graphene oxide quantum dots for adjusting the interlayer spacing of the membrane and reinforcing the membrane potential.
Correlation-driven electron-hole asymmetry in graphene field effect devices

Nicholas Dale,Ryo Mori,M. Iqbal Bakti Utama,Jonathan D. Denlinger,Conrad Stansbury,Claudia G. Fatuzzo,Sihan Zhao,Kyunghoon Lee,Takashi Taniguchi,Kenji Watanabe,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Roland J. Koch,Feng Wang,Alessandra Lanzara

DOI: https://doi.org/10.1038/s41535-021-00404-8

IF: 6.856

2022-01-19

npj Quantum Materials

Abstract:Abstract Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in twisted graphene and moiré heterostructures has spurred interest into whether it stems from single-particle effects or from correlations, which are core to the emergence of intriguing phases in moiré systems. Here, we report an effective way to access electron-hole asymmetry in 2D materials by directly measuring the quasiparticle self-energy in graphene/Boron Nitride field-effect devices. As the chemical potential moves from the hole to the electron-doped side, we see an increased strength of electronic correlations manifested by an increase in the band velocity and inverse quasiparticle lifetime. These results suggest that electronic correlations intrinsically drive the electron-hole asymmetry in graphene and by leveraging this asymmetry can provide alternative avenues to generate exotic phases in twisted moiré heterostructures.

materials science, multidisciplinary,physics, applied, condensed matter,quantum science & technology
New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

Dong Sun,Grant Aivazian,Aaron M. Jones,Wang Yao,David Cobden,Xiaodong Xu

DOI: https://doi.org/10.48550/arXiv.1108.3360

2011-08-17

Abstract:The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measurements yield a photocurrent response time of ~1.5 ps at room temperature increasing to ~4 ps at 20 K. Combined with the negligible dependence of photocurrent amplitude on environmental temperature this implies that hot carriers rather than phonons dominate energy transport at high frequencies. Gate-dependent pump-probe measurements demonstrate that both thermoelectric and built-in electric field effects contribute to the photocurrent excited by laser pulses. The relative weight of each contribution depends on the junction configuration. A single laser beam excitation also displays multiple polarity-reversals as a function of carrier density, a signature of impact ionization. Our results enhance the understanding of non-equilibrium electron dynamics, electron-electron interactions, and electron-phonon interactions in graphene. They also determine fundamental limits on ultrafast device operation speeds (~500 GHz) for potential graphene-based photon detection, sensing, and communication.

Mesoscale and Nanoscale Physics
Modeling and Simulation of Graphene-Gated Graphene-Gaas Schottky Junction Field-Effect Solar Cell for Its Performance Enhancement

Wenchao Chen,Xiaoqiang Li,Wen-Yan Yin,Shisheng Lin,Zhenguo Zhao,Erping Li,Haijing Zhou

DOI: https://doi.org/10.1109/ted.2015.2478136

2015-01-01

Abstract:Modeling and simulation of graphene-gated graphene-GaAs Schottky junction field-effect solar cell is performed using in-house developed algorithm based on finite-difference method, where Poisson and drift-diffusion equations are solved in an appropriate way. Our algorithm is verified by comparing the simulated J-V curve of solar cell with the previous experimental one. The carrier generation rate is calculated with light multireflection in the solar cell excluded, due to large optical absorption coefficient of GaAs, and the radiative recombination in GaAs leads to similar to 5% light generated carrier loss. The charge transfer effect in graphene is investigated, which can affect open circuit voltage, and in particular for the semiconductor substrate with very low hole mobility. It is further numerically demonstrated that: 1) both open circuit voltage V-OC and short circuit current J(SC) of the solar cell are governed by doping concentration through affecting Schottky barrier height and depletion width; 2) the value of V-OC can be effectively adjusted by decreasing the thickness of gate oxide; however, it may result in oxide breakdown or reliability problem; and 3) there is tunability inertia for V-OC with multilayer junction graphene implemented, but it can provide low series resistance.
Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction.

Youwei Zhang,Hemei Zheng,Qiyuan Wang,Chunxiao Cong,Laigui Hu,Pengfei Tian,Ran Liu,Shi-Li Zhang,Zhi-Jun Qiu

DOI: https://doi.org/10.1002/smll.201800691

IF: 13.3

2018-01-01

Small

Abstract:Graphene is characterized by demonstrated unique properties for potential novel applications in photodetection operated in the frequency range from ultraviolet to terahertz. To date, detailed work on identifying the origin of photoresponse in graphene is still ongoing. Here, scanning photocurrent microscopy to explore the nature of photocurrent generated at the monolayer-multilayer graphene junction is employed. It is found that the contributing photocurrent mechanism relies on the mismatch of the Dirac points between the monolayer and multilayer graphene. For overlapping Dirac points, only photothermoelectric effect (PTE) is observed at the junction. When they do not coincide, a different photocurrent due to photovoltaic effect (PVE) appears and becomes more pronounced with larger separation of the Dirac points. While only PTE is reported for a monolayer-bilayer graphene junction in the literature, this work confirms the coexistence of PTE and PVE, thereby extending the understanding of photocurrent in graphene-based heterojunctions.
Asymmetric transmission of electrons in ballistic graphene

Xin Tong,Ling Zhou,Ruihuang Zhao,Jiaxin Wang,Jinhu Luo,Junjie Du

DOI: https://doi.org/10.1103/physrevapplied.22.l031003

IF: 4.6

2024-09-11

Physical Review Applied

Abstract:Semiconductor p - n junctions with depletion zones have gained widespread use as a conventional way to give rise to electron asymmetric transmission. However, the approach is not applicable to monolayer graphene due to its characteristic feature of zero band gap. Asymmetric transmission in ballistic graphene therefore remains elusive to date. Here a simple approach based on the engineering of a four-layer array of quantum dots is proposed. Despite the array having few layers, it has the combined functionality of electron metasurfaces and band-gap materials with the symmetry breaking of spatial inversion, the extraordinary properties enabling electron asymmetric transmission. Our results open up the possibility of realizing electronic units dependent on the one-way effect and show great application potential with nearly perfect efficiency and simple design. https://doi.org/10.1103/PhysRevApplied.22.L031003 © 2024 American Physical Society

physics, applied
Organic thin film thickness-dependent photocurrents polarity in graphene heterojunction phototransistor

Meiyu He,Jiayue Han,Xingwei Han,Jun Gou,Ming Yang,Zhiming Wu,Yadong Jiang,Jun Wang

DOI: https://doi.org/10.1016/j.carbon.2021.03.024

IF: 10.9

2021-06-01

Carbon

Abstract:To overcome the weak absorption deficiency of 2D materials, combining bilayer/bulk heterojunction and 2D materials in a photoconductive framework facilitates the separation and transfer of photo-generated carriers for prominent performance photo-detector. Nevertheless, apart from improving the inferior built-in electric field, the multilayer device may suffer a low efficiency due to depletion loss considering the effective exciton length limitation. Here, we demonstrate the thickness-dependent photocurrent polarity based on a bilayer enhanced graphene/C60/ZnPc phototransistor. A fast response time down to 7.29 μs and a responsivity of 6537 A/W are achieved in the device with the help of type-II band alignment and valid interfaces between organic layers. Moreover, three controlled thicknesses of intermediate charge transfer layer are investigated for the purpose of probing the transfer direction in multilayer heterojunction, which suggests that the photocurrent polarity is highly related to the thickness of C60 and even input optical power density. Owing to the phenomena of photocurrents polarity, a distinct bending curve of responsivity-power density relation is observed near the positive-negative altering point compared to general logarithm linear relation in most photoconductive devices. Our results may enable further exploration of charge transfer mechanism in multilayer system and development of high speed photoconductive transistor.

materials science, multidisciplinary,chemistry, physical
Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Jiayu Li,Li Lin,Dingran Rui,Qiucheng Li,Jincan Zhang,Ning Kang,Yanfeng Zhang,Hailin Peng,Zhongfan Liu,H. Q. Xu

DOI: https://doi.org/10.1021/acsnano.7b00313

2017-05-03

Abstract:Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of carbon atoms in the graphene lattice by nitrogen atoms. In this work, we report on electrical and magnetotransport measurements of high-quality graphitic nitrogen-doped graphene. We show that the substitutional nitrogen dopants in graphene introduce atomically sharp scatters for electrons but long-range Coulomb scatters for holes and, thus, graphitic nitrogen-doped graphene exhibits clear electron-hole asymmetry in transport properties. Dominant scattering processes of charge carriers in graphitic nitrogen-doped graphene are analyzed. It is shown that the electron-hole asymmetry originates from a distinct difference in intervalley scattering of electrons and holes. We have also carried out the magnetotransport measurements of graphitic nitrogen-doped graphene at different temperatures and the temperature dependences of intervalley scattering, intravalley scattering and phase coherent scattering rates are extracted and discussed. Our results provide an evidence for the electron-hole asymmetry in the intervalley scattering induced by substitutional nitrogen dopants in graphene and shine a light on versatile and potential applications of graphitic nitrogen-doped graphene in electronic and valleytronic devices.

Mesoscale and Nanoscale Physics,Materials Science
Depolarization Field-Induced Photovoltaic Effect in Graphene/α-In 2 Se 3 /Graphene Heterostructures

Shahriar Muhammad Nahid,SungWoo Nam,Arend M. van der Zande

DOI: https://doi.org/10.1021/acsnano.3c11558

IF: 17.1

2024-05-22

ACS Nano

Abstract:The ferroelectric photovoltaic effect (FPVE) enables alternate pathways for energy conversion that are not allowed in centrosymmetric materials. Understanding the dominant mechanism of the FPVE at the ultrathin limit is important for defining the ultimate efficiency. In contrast to the wide band gap conventional thin-film ferroelectrics, 2D α-In(2)Se(3) has an ideal band gap of 1.3 eV and enables the fabrication of ultrathin and stable heterostructures, providing the perfect platform to explore...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Nonlinear photocurrents in two-dimensional systems based on graphene and boron nitride

F. Hipolito,Thomas G. Pedersen,Vitor M. Pereira

DOI: https://doi.org/10.1103/physrevb.94.045434

IF: 3.7

2016-07-26

Physical Review B

Abstract:The dc photoelectrical currents can be generated purely as a nonlinear effect in uniform media lacking inversion symmetry without the need for a material junction or bias voltages to drive it, in what is termed photogalvanic effect. These currents are strongly dependent on the polarization state of the radiation, as well as on topological properties of the underlying Fermi surface such as its Berry curvature. In order to study the intrinsic photogalvanic response of gapped graphene, biased bilayer graphene (BBG), and hexagonal boron nitride (hBN), we compute the nonlinear current using a perturbative expansion of the density matrix. This allows a microscopic description of the quadratic response to an electromagnetic field in these materials, which we analyze as a function of temperature and electron density. We find that the intrinsic response is robust across these systems and allows for currents in the range of pA cm/W to nA cm/W. At the independent-particle level, the response of hBN-based structures is significant only in the ultraviolet due to their sizable band gap. However, when Coulomb interactions are accounted for by explicit solution of the Bethe-Salpeter equation, we find that the photoconductivity is strongly modified by transitions involving exciton levels in the gap region, whose spectral weight dominates in the overall frequency range. Biased bilayers and gapped monolayers of graphene have a strong photoconductivity in the visible and infrared window, allowing for photocurrent densities of several nA cm/W. We further show that the richer electronic dispersion of BBG at low energies and the ability to change its band gap on demand allows a higher tunability of the photocurrent, including not only its magnitude but also, and significantly, its polarity.

physics, condensed matter, applied,materials science, multidisciplinary
Geometric structure-guided photo-driven ion current through asymmetric graphene oxide membranes

Yaping Feng,Haoyu Dai,Jianjun Chen,Xian Kong,Jinlei Yang,Lei Jiang

DOI: https://doi.org/10.1039/c9ta07570d

IF: 11.9

2019-01-01

Journal of Materials Chemistry A

Abstract:It has been demonstrated previously that ion transport can be generated in a graphene oxide membrane (GOM) when light is illuminated on an off-centre position on it, which triggers a transmembrane potential. We show in this work that rational design of the GOM geometry obviates the necessity of partial illumination. Upon full-area light illumination, a net cationic flow through a geometry-asymmetric GOM is generated from the thin side toward the thick side. The origin of the photo-responsiveness of the asymmetric GOM is the synergistic effect of light decay with depth in the GOM and the disparate diffusion rates of charge carriers in the GOM, i.e., electrons and holes. The geometry modulation of the GOM provides a facile and straightforward way to photo-induce ion transport.
Intrinsic and extrinsic photogalvanic effects in twisted bilayer graphene

Fernando Peñaranda,Hector Ochoa,Fernando de Juan

2024-02-13

Abstract:The chiral lattice structure of twisted bilayer graphene with D6 symmetry allows for intrinsic photogalvanic effects only at off-normal incidence, while additional extrinsic effects are known to be induced by a substrate or a gate potential. In this work, we first compute the intrinsic effects and show they reverse sign at the magic angle, revealing a band inversion at the {\Gamma} point. We next consider different extrinsic effects, showing how they can be used to track the strengths of the substrate coupling or displacement field. We also show that the approximate particle-hole symmetry implies stringent constraints on the chemical potential dependence of all photocurrents. A detailed comparison of intrinsic vs. extrinsic photocurrents therefore reveals a wealth of information about the band structure and can also serve as a benchmark to constrain the symmetry breaking patterns of correlated states.

Mesoscale and Nanoscale Physics
Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Yuxuan Lin,Qiong Ma,Pin-Chun Shen,Batyr Ilyas,Yaqing Bie,Albert Liao,Emre Ergeçen,Bingnan Han,Nannan Mao,Xu Zhang,Xiang Ji,Yuhao Zhang,Jihao Yin,Shengxi Huang,Mildred Dresselhaus,Nuh Gedik,Pablo Jarillo-Herrero,Xi Ling,Jing Kong,Tomás Palacios

DOI: https://doi.org/10.1126/sciadv.aav1493

IF: 13.6

2019-06-07

Science Advances

Abstract:The broadband photothermoelectric effect has been studied on a graphene-2D semiconductor lateral heterojunction.

multidisciplinary sciences

Asymmetry Allows Photocurrent in Intrinsic Graphene.

Epitaxial Growth of Asymmetrically-Doped Bilayer Graphene for Photocurrent Generation

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Photo-Nernst Current in Graphene

Lateral photo-dember effect in graphene

Selectively Enhanced Photocurrent Generation in Twisted Bilayer Graphene with Van Hove Singularity.

Largely Enhanced Photogalvanic Effects in a Phosphorene Photodetector by Strain-Increased Device Asymmetry

Enhancement of Photocurrent in Suspended Monolayer Graphene

Enhanced Ionic Photocurrent Generation Through a Homogeneous Graphene Derivative Composite Membrane

Correlation-driven electron-hole asymmetry in graphene field effect devices

New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

Modeling and Simulation of Graphene-Gated Graphene-Gaas Schottky Junction Field-Effect Solar Cell for Its Performance Enhancement

Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction.

Asymmetric transmission of electrons in ballistic graphene

Organic thin film thickness-dependent photocurrents polarity in graphene heterojunction phototransistor

Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Depolarization Field-Induced Photovoltaic Effect in Graphene/α-In 2 Se 3 /Graphene Heterostructures

Nonlinear photocurrents in two-dimensional systems based on graphene and boron nitride

Geometric structure-guided photo-driven ion current through asymmetric graphene oxide membranes

Intrinsic and extrinsic photogalvanic effects in twisted bilayer graphene

Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions