XPS Investigation of Surface and Interface Electronic States of Alq3/ITO

郑代顺,李海蓉,王延勇,张福甲
DOI: https://doi.org/10.3321/j.issn:1000-7032.2001.04.009
2001-01-01
Chinese Journal of Luminescence
Abstract:An understanding of the surface and interface states of the organic material and the underlying anode material is meaningful for organic light-emitting devices (OLEDs). The tris-(8-hydroxyquinoline) aluminum (A1q3)/indium-tin oxide (ITO) samples were fabricated with traditional vacuum deposition. The surface and interface electronic chemical states of the A1q3 and the underlying ITO have been investigated by X-ray photoelectron spectroscopy (XPS). The analysis on XPS spectra of the surface of the Alq3/ITO structure shows that, in Alq3 molecule, the binding energy (Eb) of Al atoms is 70.7eV and 75.1eV, corresponding to Al (0) and Al (Ⅲ), respec- tively. The binding energy of C atoms is 285. 8eV, 286. 3eV and 286. 8eV, corresponding to C atoms of C- C groups, C-O and C-N bonds, respectively. The N1s main peak locates at 401 .0eV, corresponding to N atoms of C-N = C bonds. O atoms mainly bond to H atoms, and the bonding energy is 532. 8eV. The N and O atoms also interact with Al atoms through coordination bonds. In order to investigate the interface electronic states of the Alq3/ ITO structure, the samples are sput- tered by argon ions beam. The analysis on XPS spectra of the interface of the A1q3/ITO structure indicates that, as the sputtering time of argon ions beam increasing, Al2p, C1s and N1s peaks get weaker, which in- dicates the Alq3 film becomes thinner and thinner and the concentrations of the Al, C and N atoms reduce with increasing sputtering time. The core-levels of Al2p, C1s, N1s, O1s, In3d5/2 and Sn3d5/2 spectra slightly shift towards lower binding energy when the sputtering time increasing, this may be caused by the effect of oxygen, indium and tin in ITO diffusing into Alq3 layer and the argon ions beam with high energy. Besides these, with the sputtering time of argon ions beam increasing, the relative concentration of O atoms from ITO diffusing into A1q3 increases, and the interaction of O atoms with In and Sn atoms gradually re- duces, which results in the In2O3 and SnO2 turning into suboxides or metal states In and Sn, so that the binding energy of In and Sn atoms decreases.
What problem does this paper attempt to address?