Distribution of Implanted Xenon in Nanocrystalline Ti-Zr-N Coatings

V. V. Uglov,S. V. Zlotski,I. A. Saladukhin,A. Y. Rovbut,S. S. Leshkevich,G. Abadias
DOI: https://doi.org/10.1142/9789814460187_0102
2013-01-01
Abstract:Nanocrystalline coatings based on Ti-Zr-N system were reactively sputter-deposited. Xe ion irradiation did not change the phase composition of coatings. The distribution of implanted ions appears to be asymmetric with a shift into the film depth. The peak concentration is 4.7 at.% for ZrN. The smallest experimental projected range (R-p) and straggle (Delta R-p) of xenon ions was found for TiZrN film. The increase in electrical resistivity caused by radiation defects at the ion dose of 5x10(16) cm(-2) is higher for the ZrN nanocrystalline films (Delta R/R=160%) than for the TiZrN film (Delta R/R=74%).
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