Abstract:High-voltage p-channel 4H-SiC insulated gate bipolar transistors (IGBTs) have been fabricated and characterized. The devices have a forward voltage drop of 7.2 V at 100 A/cm2 and a -16 V gate bias at 25 'C, corresponding to a specific on-resistance of 72 run. CM2 and a differential on-resistance of 26mQ - CM2. Hole mobility of 12 CM2/V. s in the inversion channel with a threshold voltage of -6 V was. achieved by optimizing the n+ well doping profile and gate oxidation process. A novel current enhancement layer was adopted to reduce the KET resistance and enhance conductivity modulation by improving hole current spreading and suppressing the electron current conduction through the top n-p-n transistor. Inductive switching results have shown that the p-IGBT exhibited a turn-off time of -1 ps and a turn-off energy loss of 12 mj at 4-kV dc-link voltage and 6-A load current at 25 'C. The turn-off trajectory from the measured inductive load switching waveforms and numerical simulations shows that the p-IGBT had a near-square reverse bias safe operating area. Numerical simulations have been conducted to achieve an improved tradeoff betweenforward voltage drop and switching off energy by investigating the effects of drift layer lifetime and p-buffer layer parameters. The advantages of SiC p-IGBTs, such as the potential of very low ON-state resistance, slightly positive temperature coefficient, high switching speed, small switching losses, and large safe operating area, make them suitable and attractive for high-power high-frequency applications.

An Analytical Investigation of the Effect of Varied Buffer Layer Designs on the Turn-Off Speed for 4H-Sic Igbts

A Novel 4H–SiC/Si Heterojunction IGBT Achieving Low Turn–Off Loss

Design and Characterization of High-Voltage 4H-Sic P-Igbts

Design and Investigation of Frequency Capability of 15kv 4H-Sic Igbt

An injection efficiency model to characterize the injection capability and turn-off speed for >10kV 4H-SiC IGBTs

Single-Event Burnout Hardness for the 4H-Sic Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer

Investigation of the Effects of Snubber Capacitors on Turn-on Overvoltage of SiC MOSFETs

Operating Principles of Series-Connected IGBTs Based on Active Clamping Circuit in Voltage Source Converters

Theoretical Analysis of ON-State Performance Limit of 4H-SiC IGBT in Field-Stop Technology

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT with Improved Performance Trade-Off

Low Turn-Off Loss 4H-Sic Insulated Gate Bipolar Transistor with a Trench Heterojunction Collector

4H-Sic 15kv N-Igbt Physics-Based Sub-Circuit Model Implemented in Simulink/Matlab

Single-event burnout resilient design of 4H-SiC MOSFETs through staircase-like buffer layer

A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer

A Hybrid-Channel Injection Enhanced Modulation 4H-SiC IGBT Transistors With Improved Performance

New Improvement Results on 7.5 Kv 4H-Sic P-Igbts with R<sub>diff, On</sub> of 26 M&#x003a9;·cm<sup>2</sup> at 25&Amp;#x000b0;c

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop

A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

New Improvement Results On 7.5 Kv 4h-Sic P-Igbts With R-Diff,R- On Of 26 M Omega-Cm(2) At 25 Degrees C

Low Ron,sp.diff and Ultra-high Voltage 4H-Sic N-Channel IGBTs with Carrier Lifetime Enhancement Process