Growth Modes And Charge Injection Of Organic Films On Standard And Ultraflat Indium Tin Oxide

Ew Forsythe,Ma Abkowitz,Yl Gao

DOI: https://doi.org/10.1142/9789812793294_0010

2000-01-01

Abstract:We have studied the growth modes of of N,N'-bis-(1-naphthyl)-N,N'-diphenyl 1-1,1-biphenyl 1-4,4'-diamine (NPB) and copper phthalocyanine (CuPc) on as-received indium tin oxide (ITO) and ultra-flat ITO (P-ITO) using atomic force microscopy (AFM). The ITO surface morphology has been reduced from an average area roughness of 1.6nm to less than 0.2nm with clearly distinguishable atomic terraces corresponding to the ITO lattice spacing. For both ITO surfaces, the room temperature NPB growth mode is initially islands, which coalesce at 15 nm. Alternatively, the CuPc growth is layer by layer from the very beginning with the film morphology corresponding to the ITO morphology. The final NPB film on the ultra-flat ITO has an average roughness equivalent to the size of the NPB molecule, more than an order of magnitude less than NPB on standard ITO. Because NPB is trap free, a direct and self-consistent measure of the injection efficiency as a function ITO surface morphology and CuPc contact layer can be determined at a given applied field from the ratio of the measured dark current to the calculated trap free space charge limited current. The trap free space charge limited current is calculated from the time of flight drift mobility measured in the same specimen at the same applied field. In this way it is determined that no change in the hole injection is observable for the as-received ITO as compared to the ultra-flat ITO. When a 15.0 nm thick CuPc layer is deposited onto the ITO however the injection efficiency decreases compared to devices with no CuPc interlayer.