Low-Temperature Remote Plasma-Enhanced Atomic Layer Deposition of Graphene and Characterization of Its Atomic-Level Structure

Yijun Zhang,Wei Ren,Zhuangde Jiang,Shuming Yang,Weixuan Jing,Peng Shi,Xiaoqing Wu,Zuo-Guang Ye

DOI: https://doi.org/10.1039/c4tc00849a

IF: 6.4

2014-01-01

Journal of Materials Chemistry C

Abstract:Atomic-resolution image of a graphene sheet synthesized by remote plasma-enhanced atomic layer deposition at low temperatures.

What problem does this paper attempt to address?

Low-temperature Exfoliation of Multilayer-Graphene Material from FeCl3 and CH3NO2 Co-Intercalated Graphite Compound.

Wujun Fu,Jim Kiggans,Steven H. Overbury,Viviane Schwartz,Chengdu Liang

DOI: https://doi.org/10.1039/c1cc10508f

IF: 4.9

2011-01-01

Chemical Communications

Abstract:Microwave induced rapid decomposition of nitromethane at low temperature exfoliates the graphene sheets from the FeCl(3) and CH(3)NO(2) co-intercalated graphite compound without creating many defects and functional groups. This approach provides a scalable method for high-quality graphene materials via low-temperature exfoliation of graphite under mild chemical conditions.
Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Dacheng Wei,Yunhao Lu,Cheng Han,Tianchao Niu,Wei Chen,Andrew Thye Shen Wee

DOI: https://doi.org/10.1002/anie.201306086

2013-01-01

Angewandte Chemie International Edition

Abstract:Born at its final resting place: Moderate etching by a hydrogen plasma during plasma-enhanced chemical vapor deposition led to a critical equilibrium state of graphene edge growth in which graphene hexagonal single crystals or continuous graphene films were produced directly on dielectric substrates at 400 °C without a catalyst (see picture). The direct use of the resulting high-quality graphene in devices avoids troublesome transfer processes. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Chundong Wang,Koen Schouteden,Qi-Hui Wu,Zhe Li,Jianjun Jiang,Chris Van Haesendonck

DOI: https://doi.org/10.1088/0957-4484/27/36/365702

IF: 3.5

2016-01-01

Nanotechnology

Abstract:Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene's electronic properties.
Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

R Muñoz,C Munuera,J I Martínez,J Azpeitia,C Gómez-Aleixandre,M García-Hernández

DOI: https://doi.org/10.1088/2053-1583/4/1/015009

Abstract:Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.
The nucleation and growth of graphene under a controlled atmosphere during radio frequency-plasma-enhanced chemical vapor deposition

Na Li,Zhen Zhen,Rujing Zhang,Rende Mu,Zhenhua Xu,Limin He

DOI: https://doi.org/10.1016/j.vacuum.2021.110750

IF: 4

2022-02-01

Vacuum

Abstract:Plasma-enhanced chemical vapor deposition (PECVD) has emerged as a potential method for the industrial synthesis of graphene due to its low growth temperature, energy savings and in situ graphene growth. Unlike traditional thermal chemical vapor deposition (TCVD), PECVD usually leads to rapid nucleation and growth of graphene from the promoting effect of plasma on the dissociation of the hydrocarbon precursor, resulting in a significantly higher nucleation density of graphene and small grain size, which reduces its electrical performance. Understanding and controlling graphene nucleation and growth during PECVD are of great significance for the synthesis of high-quality graphene. In this study, we noted that the nucleation density and grain size of graphene were significantly affected by various atmospheric conditions, including the Ar flow, H2/CH4 ratio and pressure. In particular, a higher H2/CH4 ratio notably decreased the nucleation density and enlarged the grain size from the effect of the H2 plasma. Furthermore, we studied the energies of the nucleation density, grain size and growth rate of graphene under various pressures by measuring the activation energy and demonstrated that low pressure and high growth temperature enabled to the growth of graphene with low nucleation and large grain size.

materials science, multidisciplinary,physics, applied
Low‐Temperature Synthesis of Graphene by ICP‐Assisted Amorphous Carbon Sputtering

Xing Ye,Haiping Zhou,Igor Leychenko,Kateryna Bazaka,Shuyan Xu,Shaoqing Xiao

DOI: https://doi.org/10.1002/slct.201800911

2018-01-01

ChemistrySelect

Abstract:Efficient and affordable synthesis of graphene at low temperatures remains a significant challenge that potentially limits the use of this material in real-life applications. We describe here a simple, efficient, highly controllable technique to synthesize graphene by sputtering carbon from a solid source with the assistance of inductively coupled plasma (ICP), followed by controllable low-temperature annealing at about 550 degrees C. Raman scattering and X-ray diffraction characterizations have revealed the formation of a few layer graphene of high quality, confirmed by a low (similar to 0.48) I-D/I-G ratio. Raman analysis of samples formed at various annealing temperatures has revealed an upper limit for annealing temperature of 585 degrees C, beyond which the formed graphene reversibly dissolves in the metal. The ICP-assisted process was innovatively employed to improve the quality of thus-fabricated graphene at low temperatures. The mechanism of graphene formation was attributed to the metal induced graphitization in combination with the carbon precipitation onto the catalyst surface.
Low temperature crystallization of diamond-like carbon films to graphene by low energy plasma surface treatment

Savcho Tinchev

DOI: https://doi.org/10.48550/arXiv.1207.0837

2012-07-04

Abstract:Plasma surface modification was used to fabricate graphene on the top of insulating diamond-like carbon films. It is shown that by a combination of pulsed argon plasma treatment and thermal annealing at 350\degreeC is possible to achieve partial crystallization of amorphous carbon to graphene. The observed Raman spectra are typical for defected graphene - splitted D- and G-peaks and a broad 2D-peak. This result is very encouraging and we hope that by improving this technology it will be possible to fabricate defect-free graphene, which can be used in electronics without transfer to other substrates.

Materials Science
Enhancing Graphene Nanoplatelet Reactivity through Low-Temperature Plasma Modification

Karolina Kadela,Gabriela Grzybek,Andrzej Kotarba,Paweł Stelmachowski

DOI: https://doi.org/10.1021/acsami.4c01226

IF: 9.5

2024-04-05

ACS Applied Materials & Interfaces

Abstract:Graphene-based materials have great potential for applications in many fields, but their poor dispersion in polar solvents and chemical inertness require improvements. Low-temperature plasma allows the precise modification of materials, improving the physicochemical properties of the surface and thus creating the possibility of their potential use. Plasma treatment offers the possibility of introducing oxygen functional groups simply, rapidly, and in a controlled way. In this work, a systematic...

materials science, multidisciplinary,nanoscience & nanotechnology
Direct Deposition of Uniform High-Κ Dielectrics on Graphene.

Peng Zhou,Songbo Yang,Qingqing Sun,Lin Chen,Pengfei Wang,Shijin Ding,David Wei Zhang

DOI: https://doi.org/10.1038/srep06448

IF: 4.6

2014-01-01

Scientific Reports

Abstract:High quality High-κ dielectrics on graphene were achieved by atomic layer deposition directly using remote oxygen plasma surface pretreatment. The uniform coverage on graphene is illustrated by atomic force microscopy and confirmed by high resolution transmission microscopy. The possible surface lattice damage induced by plasma is limited and demonstrated by Raman spectra. The excellent Hall mobility for graphene is maintained at 2.7 × 10(3) cm(2)/V · s, which only decreases by 25%. The excellent electrical characteristic of dielectric presents the low leakage current density and high breakdown voltage. Moreover, the technology is compatible with the traditional CMOS process which brings much possibility to future graphene devices.
Nucleation and growth of graphene at different temperatures by plasma enhanced chemical vapor deposition

Na Li,Di Li,Zhen Zhen,Rujing Zhang,Rende Mu,Zhenhua Xu,Limin He

DOI: https://doi.org/10.1016/j.mtcomm.2023.106568

IF: 3.8

2023-07-02

Materials Today Communications

Abstract:Temperature plays an important role in the synthesis of graphene by chemical vapor deposition. In the low-temperature plasma-enhanced chemical vapor deposition (PECVD) process, although the cleavage of hydrocarbon precursor no longer depends on growth temperature, which can affect the nucleation and growth of graphene by the diffusion and adsorption of active species, the catalytic ability of substrate and other factors, and ultimately lead to various growth of graphene. In this paper, the nucleation and growth of graphene at different temperatures by PECVD were studied. We noted that the nucleation and growth of graphene varied greatly in different temperature zones. Graphene could not be grown at low temperatures ( 950 °C), the coexistence of large and small grains was finally formed. In addition, the models of the nucleation and growth of graphene in different temperature zones were proposed.

materials science, multidisciplinary
Direct Low-Temperature Synthesis of Graphene on Various Glasses by Plasma-Enhanced Chemical Vapor Deposition for Versatile, Cost-Effective Electrodes

Jingyu Sun,Yubin Chen,Xin Cai,Bangjun Ma,Zhaolong Chen,Manish Kr. Priydarshi,Ke Chen,Teng Gao,Xiuju Song,Qingqing Ji,Xuefeng Guo,Dechun Zou,Yanfeng Zhang,Zhongfan Liu

DOI: https://doi.org/10.1007/s12274-015-0849-0

IF: 9.9

2015-01-01

Nano Research

Abstract:Catalyst-free and scalable synthesis of graphene on various glass substrates at low temperatures is of paramount significance to numerous applications such as low-cost transparent electronics and state-of-the-art displays. However, systematic study within this promising research field has remained scarce thus far. Herein, we report the direct growth of graphene on various glasses using a low-temperature plasma-enhanced chemical vapor deposition method. Such a facile and scalable approach guarantees the growth of uniform, transfer-free graphene films on various glass substrates at a growth temperature range of 400–600 °C. The morphological, surface wetting, optical, and electrical properties of the obtained graphene can be tailored by controlling the growth parameters. Our uniform and high-quality graphene films directly integrated with low-cost, commonly used glasses show great potential in the fabrication of multi-functional electrodes for versatile applications in solar cells, transparent electronics, and smart windows.
Low-temperature low-power PECVD synthesis of vertically aligned graphene

Shahzad Hussain,Eva Kovacevic,Johannes Berndt,Neelakandan M Santhosh,Cdric Pattyn,Ana Dias,Thomas Strunskus,Mohamed-Ramzi Ammar,Andrea Jagodar,Mireille Gaillard,Chantal Boulmer-Leborgne,Uro Cvelbar,Cédric Pattyn,Uroš Cvelbar

DOI: https://doi.org/10.1088/1361-6528/ab9b4a

IF: 3.5

2020-07-08

Nanotechnology

Abstract:The need for 2D vertical graphene nanosheets (VGNs) is driven by its great potential in diverse energy, electronics, and sensor applications, wherein many cases a low-temperature synthesis is preferred due to requirements of the manufacturing process. Unfortunately, most of today's known methods, including plasma, require either relatively high temperatures or high plasma powers. Herein, we report on a controllable synthesis of VGNs at a pushed down low-temperature boundary for synthesis, the low temperatures (450 °C) and low plasma powers (30 W) using capacitively coupled plasma (CCP) driven by radio-frequency power at 13.56 MHz. The strategies implemented also include unrevealing the role of Nickel (Ni) catalyst thin film on the substrates (Si/Al). It was found that the Ni catalyst on Si/Al initiates the nucleation/growth of VGNs at 450 °C in comparison to the substrates without Ni catalyst. With increasing temperature, the graphene nanosheets become bigger in size, well-structured and well separated. The role of Ni catalysts is hence to boost the growth rate, density, and quality of the growing VGNs. Furthermore, this CCP method can be used to synthesize VGNs at the lowest temperatures possible so far on a variety of substrates and provide new opportunities in the practical application of VGNs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

Le Wang,Jie Sun,Weiling Guo,Yibo Dong,Yiyang Xie,Fangzhu Xiong,Zaifa Du,Longfei Li,Jun Deng,Chen Xu

DOI: https://doi.org/10.3390/ma13092026

2020-04-26

Abstract:Arc discharge is traditionally used to synthesize randomly arranged graphene flakes. In this paper, we substantially modify it into a glow discharge method so that the discharge current is much more reduced. The H2 and/or Ar plasma etching of the graphitic electrode (used to ignite the plasma) is hence much gentler, rendering it possible to grow graphene in thin film format. During the growth at a few mbar, there is no external carbon gas precursor introduced. The carbon atoms and/or carbon containing particles as a result of the plasma etching are emitted in the chamber, some of which undergo gas phase scattering and deposit onto the metallic catalyst substrates (Cu-Ni alloy thin films or Cu foils) as graphene sheets. It is found that high quality monolayer graphene can be synthesized on Cu foil at 900 °C. On Cu-Ni, under the same growth condition, somewhat more bilayer regions are observed. It is observed that the material quality is almost indifferent to the gas ratios, which makes the optimization of the deposition process relatively easy. Detailed study on the deposition procedure and the material characterization have been carried out. This work reveals the possibility of producing thin film graphene by a gas discharge based process, not only from fundamental point of view, but it also provides an alternative technique other than standard chemical vapor deposition to synthesize graphene that is compatible with the semiconductor planar process. As the process uses solid graphite as a source material that is rich in the crust, it is a facile and relatively cheap method to obtain high quality graphene thin films in this respect.
Free-standing Graphene at Atomic Resolution

Mhairi H. Gass,Ursel Bangert,Andrew L. Bleloch,Peng Wang,Rahul R. Nair,A. K. Geim

DOI: https://doi.org/10.1038/nnano.2008.280

IF: 38.3

2008-01-01

Nature Nanotechnology

Abstract:Research interest in graphene, a two-dimensional crystal consisting of a single atomic plane of carbon atoms, has been driven by its extraordinary properties, including charge carriers that mimic ultra-relativistic elementary particles. Moreover, graphene exhibits ballistic electron transport on the submicrometre scale, even at room temperature, which has allowed the demonstration of graphene-based field-effect transistors and the observation of a room-temperature quantum Hall effect. Here we confirm the presence of free-standing, single-layer graphene with directly interpretable atomic-resolution imaging combined with the spatially resolved study of both the pi -> pi* transition and the pi + sigma plasmon. We also present atomic-scale observations of the morphology of free-standing graphene and explore the role of microstructural peculiarities that affect the stability of the sheets. We also follow the evolution and interaction of point defects and suggest a mechanism by which they form ring defects.
Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (adv. Mater. 9/2014)

Jianyi Chen,Yunlong Guo,Lili Jiang,Zhiping Xu,Liping Huang,Yunzhou Xue,Dechao Geng,Bin Wu,Wenping Hu,Gui Yu,Yunqi Liu

DOI: https://doi.org/10.1002/adma.201470059

IF: 29.4

2014-01-01

Advanced Materials

Abstract:Via a small-carbon-flow, long-time, near-equilibrium chemical vapor deposition method, single-crystal graphene grains larger than 10 μm are grown directly on various dielectric substrates, successfully practicing the Chinese saying of (slow work yields a fine product). The high mobility, exceeding 5000 cm2 V−1 s−1, is comparable to that of metal-catalyzed graphene. Further details can be found in the article by Y. Liu and co-workers on page 1348.
Layer-By-Layer Thinning of Graphene by Plasma Irradiation and Post-Annealing

Xichao Yang,Shujie Tang,Guqiao Ding,Xiaoming Xie,Mianheng Jiang,Fuqiang Huang

DOI: https://doi.org/10.1088/0957-4484/23/2/025704

IF: 3.5

2012-01-01

Nanotechnology

Abstract:A simple and efficient method of thinning graphene with an accuracy of a single layer is proposed, which includes mild nitrogen plasma irradiation and annealing in Ar/O-2. On the basis of our data, plasma irradiation induces damages in the top-layer graphene and the annealing removes the damaged layer by fast oxidation. The process was used to turn bilayer graphene into monolayer as well as thin multilayer graphene layer-by-layer via repeated utilization. Combined with electron beam lithography, patterns were fabricated by selectively removing graphene planes. The thinned graphene possesses good quality verified by atomic force microscopic investigation and Raman analysis. The process presented here offers a very useful post-synthesis manipulation of graphene thickness, which may find important applications for graphene-based device fabrication.
Precise Control of Graphene Etching by Remote Hydrogen Plasma

Bangjun Ma,Shizhao Ren,Peiqi Wang,Chuancheng Jia,Xuefeng Guo

DOI: https://doi.org/10.1007/s12274-018-2192-8

IF: 9.9

2018-01-01

Nano Research

Abstract:Graphene with atomically smooth and configuration-specific edges plays the key role in the performance of graphene-based electronic devices. Remote hydrogen plasma etching of graphene has been proven to be an effective way to create smooth edges with a specific zigzag configuration. However, the etching process is still poorly understood. In this study, with the aid of a custom-made plasma-enhanced hydrogen etching (PEHE) system, a detailed graphene etching process by remote hydrogen plasma is presented. Specifically, we find that hydrogen plasma etching of graphene shows strong thickness and temperature dependence. The etching process of single-layer graphene is isotropic. This is opposite to the anisotropic etching effect observed for bilayer and thicker graphene with an obvious dependence on temperature. On the basis of these observations, a geometrical model was built to illustrate the configuration evolution of graphene edges during etching, which reveals the origin of the anisotropic etching effect. By further utilizing this model, armchair graphene edges were also prepared in a controlled manner for the first time. These investigations offer a better understanding of the etching process for graphene, which should facilitate the fabrication of graphene-based electronic devices with controlled edges and the exploration of more interesting properties of graphene.
Thinning and Functionalization of Few-Layer Graphene Sheets by CF 4 Plasma Treatment

Chao Shen,Gaoshan Huang,Yingchun Cheng,Ronggen Cao,Fei Ding,Udo Schwingenschlögl,Yongfeng Mei

DOI: https://doi.org/10.1186/1556-276x-7-268

2012-01-01

Nanoscale Research Letters

Abstract:Structural changes of few-layer graphene sheets induced by CF4 plasma treatment are studied by optical microscopy and Raman spectroscopy, together with theoretical simulation. Experimental results suggest a thickness reduction of few-layer graphene sheets subjected to prolonged CF4 plasma treatment while plasma treatment with short time only leads to fluorine functionalization on the surface layer by formation of covalent bonds. Raman spectra reveal an increase in disorder by physical disruption of the graphene lattice as well as functionalization during the plasma treatment. The F/CF3 adsorption and the lattice distortion produced are proved by theoretical simulation using density functional theory, which also predicts p-type doping and Dirac cone splitting in CF4 plasma-treated graphene sheets that may have potential in future graphene-based micro/nanodevices. PACS: 81.05.ue; 73.22.Pr; 52.40.Hf.
A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Lixin Liu,Hailong Zhou,Rui Cheng,Yu Chen,Yung-Chen Lin,Yongquan Qu,Jingwei Bai,Ivan A. Ivanov,Gang Liu,Yu Huang,Xiangfeng Duan

DOI: https://doi.org/10.1039/c1jm14272k

2011-01-01

Journal of Materials Chemistry

Abstract:Graphene has attracted considerable interest as a potential material for future electronics. Although mechanical peel is known to produce high quality graphene flakes, practical applications require continuous graphene layers over a large area. The catalyst-assisted chemical vapor deposition (CVD) is a promising synthetic method to deliver wafer-sized graphene. Here we present a systematic study on the nucleation and growth of crystallized graphene domains in an atmospheric pressure chemical vapor deposition (APCVD) process. Parametric studies show that the mean size of the graphene domains increases with increasing growth temperature and CH4 partial pressure, while the density of domains decreases with increasing growth temperature and is independent of the CH4 partial pressure. Our studies show that nucleation of graphene domains on copper substrate is highly dependent on the initial annealing temperature. A two-step synthetic process with higher initial annealing temperature but lower growth temperature is developed to reduce domain density and achieve high quality full-surface coverage of monolayer graphene films. Electrical transport measurements demonstrate that the resulting graphene exhibits a high carrier mobility of up to 3000 cm2 V-1 s-1 at room temperature.
Ultrathin Graphdiyne Film on Graphene Through Solution-Phase Van Der Waals Epitaxy

Xin Gao,Yihan Zhu,Ding Yi,Jingyuan Zhou,Shishu Zhang,Chen Yin,Feng Ding,Shuqing Zhang,Xiaohui Yi,Jizheng Wang,Lianming Tong,Yu Han,Zhongfan Liu,Jin Zhang

DOI: https://doi.org/10.1126/sciadv.aat6378

IF: 13.6

2018-01-01

Science Advances

Abstract:Graphdiyne (GDY) is an ordered two-dimensional (2D) carbon allotrope comprising sp- and sp2-hybridized carbon atoms with high degrees of π-conjugation, which features a natural band gap and superior electric properties. However, the synthesis of one- or few-layer GDY remains challenging because of the free rotation around alkyne-aryl single bonds and the lack of thickness control. We report the facile synthesis of an ultrathin single-crystalline GDY film on graphene through a solution-phase van der Waals epitaxial strategy. The weak admolecule-substrate interaction at the heterojunction drastically relaxes the large lattice mismatch between GDY and graphene. It allows the fast in-plane coupling of admolecules and slow out-of-plane growth toward the formation of an incommensurately stacked heterostructure, which is composed of single-layer graphene and few-layer ABC-stacked GDY, as directly observed by electron microscopy and identified from Raman fingerprints. This study provides a general route not only to the bottom-up synthesis of intriguing 2D acetylenic carbon allotropes but also to the device fabrication for the direct measurement of their intrinsic electrical, mechanical, and thermal properties.

Low-Temperature Remote Plasma-Enhanced Atomic Layer Deposition of Graphene and Characterization of Its Atomic-Level Structure

Low-temperature Exfoliation of Multilayer-Graphene Material from FeCl3 and CH3NO2 Co-Intercalated Graphite Compound.

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

The nucleation and growth of graphene under a controlled atmosphere during radio frequency-plasma-enhanced chemical vapor deposition

Low‐Temperature Synthesis of Graphene by ICP‐Assisted Amorphous Carbon Sputtering

Low temperature crystallization of diamond-like carbon films to graphene by low energy plasma surface treatment

Enhancing Graphene Nanoplatelet Reactivity through Low-Temperature Plasma Modification

Direct Deposition of Uniform High-Κ Dielectrics on Graphene.

Nucleation and growth of graphene at different temperatures by plasma enhanced chemical vapor deposition

Direct Low-Temperature Synthesis of Graphene on Various Glasses by Plasma-Enhanced Chemical Vapor Deposition for Versatile, Cost-Effective Electrodes

Low-temperature low-power PECVD synthesis of vertically aligned graphene

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

Free-standing Graphene at Atomic Resolution

Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (adv. Mater. 9/2014)

Layer-By-Layer Thinning of Graphene by Plasma Irradiation and Post-Annealing

Precise Control of Graphene Etching by Remote Hydrogen Plasma

Thinning and Functionalization of Few-Layer Graphene Sheets by CF 4 Plasma Treatment

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Ultrathin Graphdiyne Film on Graphene Through Solution-Phase Van Der Waals Epitaxy