Fracture toughness of Cu-Sn intennetallic compounds in electronic packages

zhong chen,tommy cahyadi,ming li,bavani balakrisnan,chan choy chum

DOI: https://doi.org/10.1109/ECTC.2003.1216388

2003-01-01

Abstract:Intermetallic compounds (IMC) in a solder joint play an important role in the joint reliability for electronic packages. Experimental observation shows there is a clear trend of intermetallic fracture when the layer thickness increases. However there has been so far not much work carried out on the direct measurement of IMC fracture toughness in the thin-film form. The main reason is that the thickness of these intermetallic compounds at solder joints is only of the order of micra, which makes the direct measurement very difficult Conventional shear test or butt pull test on a solder joint could not reveal the fracture strength of intermetallics because the fracture path is often very complicated involving more than one fracture mechanism. The current work employed a new testing approach of directly measuring the fracture strain and fracture toughness of around one micron thick Sn-Cu intermetallic compounds by controlled buckling test. Single phase Cu6Sn5 or Cu3Sn was prepared by co-sputtering Cu and So of the right atomic ratio followed by appropriate annealing, The substrates used were polymeric thin plates. During experiment the thin film intermetallics fractured by channeling cracks at the maximum strain site. By monitoring the formation of channeling, critical strain at which the cracking initiates can be calculated by large displacement beam theory. Based on the critical fracture strain, the mode I fracture toughness of the intermetallic compounds can be calculated. It was found that the toughness of the two types of thin film intermetallics between Cu and Sri is around 55-65 J/m(2). This new approach is also applicable to the fracture toughness measurement of other types of brittle thin films.