Investigations on the Thermal Conductivity of Micro-Scale Cu-Sn Intermetallic Compounds Using Femtosecond Laser Time-Domain Thermoreflectance System

Zhou Lijun,Wei Song,Guo Jingdong,Sun Fangyuan,Wang Xinwei,Tang Dawei
DOI: https://doi.org/10.11900/0412.1961.2021.00216
IF: 1.797
2022-01-01
ACTA METALLURGICA SINICA
Abstract:An accurate temperature analysis of electronic packaging requires an understanding of the thermal-transport parameters of the material. However, studies on the thermal conductivity of intermetallic compounds (IMCs) in micro-interconnect solder joints are scarce, particularly common IMCs forming in Cu-Sn systems, which seriously affect the precise prediction of the temperature field and thermal stress for electronic packaging structures. This work proposes a novel method to quantitatively measure the thermophysical parameters of Cu-Sn IMCs based on the dual-wavelength femtosecond laser timedomain thermoreflectance (TDTR) system. Cu-Sn diffusion couple samples were prepared using a reflow and aging process. Two layers of Cu6Sn5 and Cu3Sn IMCs formed at the interface with micron thickness, and the (001) crystal plane of Cu6Sn5 was the preferred orientation. The sensitivity of the experimental parameters to the measurement parameters affects the fitting accuracy. Therefore, before testing, the effects of the aluminum transducer thickness and pump laser modulation frequency on the phase signal sensitivity in the thermal conductivity measurements of Cu6Sn5 and Cu3Sn were analyzed to help select the specific experimental parameters. After testing, the thermal conductivities of Cu6Sn5 and Cu3Sn were 47.4 and 87.6 W/(m center dot K), respectively, which are slightly higher than the previous results because of the microstructure discrepancy caused by different material preparation techniques. Finally, the influence of the pump laser diameter, aluminum transducer thickness, and material specific heat on the measurement error of thermal conductivity for Cu6Sn5 and Cu3Sn was examined. The test errors of the Cu6Sn5 and Cu3Sn thermal conductivity were -6.8%similar to 4.6% and -7.1%similar to 4.4%, respectively. Overall, the TDTR technology can evaluate the thermal-transport characteristics of micron-scale intermetallic compounds in electronic packaging and guide the thermal design and reliability evaluations of electronic components.
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