Abstract:Solution-driven metal-oxide semiconductors have recently received much attention as a viable option for low-cost, flexible electronic devices. In this paper, a simple, environmentally friendly aqueous solution method has been adopted to deposit an ultrathin In2O3 semiconductor layer with a thickness of about 7 nm at low temperature. Then, in combination with the advantages of atomic layer deposition (ALD) technology, an ultrathin aluminum oxide dielectric layer of about 20 nm was prepared to fabricate high-performance In2O3/Al2O3 thin-film transistor (TFT) devices. The device with optimized annealing temperature of 280 degrees C has demonstrated an excellent electrical performance, including a high saturation mobility of 11.85 cm(2) .V-1 . s(-1), a large ON/OFF current ratio of 10(6), a low threshold voltage of 0.12 V, a small hysteresis voltage of 0.05 V, and a small density of interface state of 1.97 x 10(12) cm(-2), respectively. To demonstrate the potential of In2O3/AlOx TFT toward more complex logic applications, the unipolar inverter was further constructed and exhibited a high gain of 5. Importantly, all these device parameters were obtained at an ultralow operating voltage of 2.5 V. As a result, it can be inferred that the water-induced In2O3 TFTs based on ALD-derived Al2O3 dielectrics have a potential application as a promising alternative for lowcost, low-power consumption, and large-area environmentally friendly oxide flexible electronics.

A Printed Aluminum Cathode with Low Sintering Temperature for Organic Light-Emitting Diodes

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Highly Air-Stable Electron-Transport Material for Ink-Jet-Printed OLEDs.

Low sublimation temperature cesium pivalate complex as an efficient electron injection material for organic light-emitting diode devices

A Simple, Low Cost Ink System for Drop-on-Demand Printing High Performance Metal Oxide Dielectric Film at Low Temperature.

[High Contrast Organic Light-Emitting Diodes Using Pb-Lif As Cathode].

Low-temperature Multi-Layer Al2 O3/TiO2 Composite Encapsulation Thin Film by Atomic Layer Deposition

Improved Flexibility of Flexible Organic Light-Emitting Devices by Using a Metal/organic Multilayer Cathode

Investigation of an efficient YbF3/Al cathode for tris-(8-hydroxyquinoline)aluminum-based small molecular organic light-emitting diodes

High Contrast Organic Light-Emitting Devices with Improved Electrical Characteristics

Highly Efficient Top-Emitting Organic Light-Emitting Devices with Aluminium Electrodes

Interfacial Engineering of Printable Bottom Back Metal Electrodes for Full-Solution Processed Flexible Organic Solar Cells

Realization of Al2O3/MgO Laminated Structure at Low Temperature for Thin Film Encapsulation in Organic Light-Emitting Diodes.

A highly transparent laminated composite cathode for organic light-emitting diodes

Control Of Carrier Transport In Organic Semiconductors By Aluminum Doping

Epitaxial Ultrathin Au Films on Transparent Mica with Oxide Wetting Layer Applied to Organic Light-Emitting Devices

Solution Processed Alkali-Metal and Alkaline-Earth-metal Compounds As the Efficient Electron Injection Layer in Organic Light-Emitting Diodes

Pure Aluminum As the Anode in Top Emission Oled

The Effect Of Electrode Materials On The Performance Of Oleds

High-Efficiency, Large-Area And Color-Stable Flexible Organic Light-Emitting Diodes Using An Ultra-Thin Metal Electrode

P‐230: Novel Electrical‐Chemically Polished Stainless Steel Anode Organic Light Emission Device with Long Lifetime at High Luminance for Flexible Lighting