Abstract:A lattice temperature model is derived for oxide-confined vertical cavity surface emitting lasers (VCSELs) based on carrier transport and the conservation of energy. Peltier heat is caused by the bandedge and quasi-Fermi level discontinuities at a heterojunction. However, considering the device size, Peltier heat needs to be distributed and is not just generated at the interface, otherwise, an anomolous spike in temperature will occur. We have developed a novel treatment to model the Peltier heat at a heterojunction by use of a Monte Carlo simulation. Peltier heat is found to be a major heat contributor, and it results in a rapid and high temperature rise in the separate confinement heterostructure (SCH) region of the laser diode. We have also shown that the carrier thermal conductivities for materials with high mobilities must be included at high carrier densities because they contribute to additional spreading of the thermal energy. Subsequently, this lattice temperature model is coupled self-consistently to electronic and optical solvers to form a complete simulator for VCSELs. Self-heating causes a fast temperature rise when the VCSEL is operated under continuous wave conditions, causing resonant wavelength changes and an eventual thermal rollover. The resonant wavelength shift has been shown to be caused mainly by the heating of the distributed Bragg reflectors even though the peak temperature occurs within the SCH region. Possible physical factors causing the thermal rollover have also been examined with our complete simulator. The Auger recombination process is found to be one of the main factors causing the thermal rollover in 980 nm oxide-confined VCSELs while the photon lifetime is a factor in determining the position of the thermal rollover. We have also achieved a very good match between our simulated results and experimental data.

Physical Origin of Data Pattern Inversion in Optical Injection-Locked VCSELs

Effects of the Spatial Nonuniformity of Optical Transverse Modes on the Modulation Response of Vertical-Cavity Surface-Emitting Lasers

Lattice Temperature Model and Temperature Effects in Oxide-Confined VCSEL’s

Experimental Study on the Dynamics of Polarized Strong Optical Injection in 1550 Nm Vcsels

An ellipse model for cavity mode behavior of optically injection-locked VCSELs.

Experimental and Theoretical Study of Wide Hysteresis Cycles in 1550 Nm VCSELs under Optical Injection.

Modeling Analysis of All-Optical Wavelength Conversion Using Injection-Locked Semiconductor Lasers

Experimental Study on Polarized Strong Optical Injection in VCSELs

Suppression of modulation instability in VCSEL by external optical injection

All-optical Flip-Flop Operation Based on Bistability in V-cavity Laser

Theoretical Study on Phase Conjugation in Weakly Injected Vertical-Cavity Surface-Emitting Lasers

Simulating the Spiking Response of VCSEL-based Optical Spiking Neuron

Simultaneous All‐optical Amplification, Inversion and Format Conversion Based on Self‐induced Nonlinear Effects in a Semiconductor Optical Amplifier

Optical injection in semiconductor ring lasers

Optical chaotic data-selection logic operation with the fast response for picosecond magnitude

Theoretical Study on Polarization Dynamics of Vcsels with Negative Optoelectronic Feedback

High-Speed Optical Chaotic Data Selection Logic Operations with the Performance of Error Detection and Correction

Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser with Light Injection

Investigation of numerical simulation on all-optical flip-flop stability maps of 1550nm vertical-cavity surface-emitting laser

Optical Image Inversion and Edge Detection Based on Vertical Cavity Semiconductor Optical Amplifiers (Vcsoas)

Polarization degree of vertical-cavity surface-emitting lasers subject to optical feedback with controllable polarization