Adjusting the Electronic Properties of Silicon Carbide Nanoribbons by Introducing Edge Functionalization

Yanqiong He,Peng Zhang,Xiuli Hou,Jiajia Xu,Meiqi Wang,Yansen Wu,Jiacheng Qu,Mingdong Dong

DOI: https://doi.org/10.1039/c4ra04351k

IF: 4.036

2014-01-01

RSC Advances

Abstract:The electronic properties of silicon carbide nanoribbons can be adjusted by introducing edge functionalization.

What problem does this paper attempt to address?

The Effect of Edge Functionalization on the Device Performance of Monolayer Si 0.5 Ge 0.5 Nanoribbon Transistors

Zhao Jianwei,Cheng Na,Xia Feifei,He Yuanyuan

DOI: https://doi.org/10.1007/s10825-020-01539-w

IF: 1.9828

2020-01-01

Journal of Computational Electronics

Abstract:Monolayer silicene and germanene have received intensive attention due to their good compatibility with current Si-based electronics. However, the lack of a bandgap severely limits their applications in complex electronic circuits. To overcome this obstacle, we build Si 1− x Ge x superlattices (SLs) and further cleave them into nanoribbons to tune the electrical properties of silicene and germanene, and analyze their transport behavior by means of density functional theory combined with the nonequilibrium Green’s function formalism. Among all the designed Si 1− x Ge x SLs, Si 0.5 Ge 0.5 possesses the widest bandgap of 0.53 eV, as its larger amount of Ge–Si bonds can result in strong absorption of light towards short wavelengths. By edge functionalization with Li, H, and F atoms, the conduction type of the monolayer Si 0.5 Ge 0.5 nanoribbons can be rationally tuned from n -type to ambipolar to p -type. These tunable electronic properties can be attributed to the internal and interfacial charge transfer. The simulated transport behavior of field-effect transistors based on monolayer Si 0.5 Ge 0.5 nanoribbons demonstrates that such edge functionalization could be applied to modulate the conductivity, conduction type, on/off ratio, and carrier concentration effectively. The results of this work reveal the great potential of edge functionalization for tuning the electrical properties of two-dimensional (2D) semiconductors.
Electrical properties and spintronic application of carbon phosphide nanoribbons with edge functionalization

Liemao Cao,Xiaobo Li,Yun Li,Guanghui Zhou

DOI: https://doi.org/10.1039/d0tc01764g

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Edge-functionalization is an important method for the band engineering of nanoribbons (NRs).

materials science, multidisciplinary,physics, applied
Electronic characterization of bilayer silicene nanoribbons

Ziyue Qian,Lijun Wu,Zhiqing Wang,Shuang Wang,Naikun Sun,Linhan He,Ya Liu,Kang Zhao,Quanhui Zhang

DOI: https://doi.org/10.1016/j.mssp.2024.108528

IF: 4.1

2024-05-15

Materials Science in Semiconductor Processing

Abstract:The geometry and electronic properties of bilayer silicene nanoribbons with different widths, zigzag, armchair, and edge hydrogenation stacking modes were investigated using the self-consistent charge density functional tight-binding (SCC-DFTB) method. The results show that edge hydrogenation enhances the binding energy of the nanoribbon by adsorbing hydrogen to reduce the hanging bonds of Si, thus stabilizing the silicene and adjusting its electronic properties by affecting the energy gap. With the increase of nanoribbon width, the regular fold of the nanoribbon surface increases. Edge hydrogenation can significantly improve the binding energy of nanoribbons. For the top-type stacking (type-AA) nanoribbon, when the width of the nanoribbon is < 10, the energy gap is significantly affected by edge hydrogenation, and the energy gap decreases significantly with the increase of width. When n L > 10, the energy gap is not affected by the width, and the nanoribbon gradually shows stable semi-metallic properties. For type-AB nanoribbons, the energy gap shows a W-shaped fluctuation with increasing width under the effect of edge hydrogenation. Comparing the two stacking methods, we can find that the energy gap of the misaligned stacked nanoribbons is more sensitive to changes in the width and edge hydrogenation. This study has realized the transformation of silicene nanoribbons from semiconductor to semi-metal and metal properties in different ways. The electrons in the nanoribbons are transferred to the protruding parts of the fold or bend in the structure. The larger the extent of the protruding parts of the structure, the greater the amount of charge transferred.

materials science, multidisciplinary,engineering, electrical & electronic,physics, applied, condensed matter
Electronic properties of edge-functionalized zigzag graphene nanoribbons on SiO2 substrate

D. M. Zhang,Z. Li,J. F. Zhong,L. Miao,J. J. Jiang

DOI: https://doi.org/10.1088/0957-4484/22/26/265702

2011-01-13

Abstract:Based on first-principles calculations, electronic properties of edge-functionalized zigzag graphene nanoribbons (ZGNRs) on SiO2 substrate are presented. Metallic or semiconducting properties of ZGNRs are revealed due to various interactions between edge-hydrogenated ZGNRs and different SiO2 (0001) surfaces. Bivalent functional groups decorating ZGNRs serve as the bridge between active edges of ZGNRs and SiO2. These functional groups stabilize ZGNRs on substrate, as well as modify the edge states of ZGNRs and further affect their electronic properties. Band gaps are opened owing to edge states destruction and distorted lattice in ZGNRs.

Materials Science
Electronic properties of edge-functionalized zigzag graphene nanoribbons on SiO2 substrate-v2

D. M. Zhang,Z. Li,J. F. Zhong,L. Miao,J. J. Jiang

DOI: https://doi.org/10.48550/arXiv.1102.5592

2011-02-28

Abstract:Based on first-principles calculations, electronic properties of edge-functionalized zigzag graphene nanoribbons (ZGNRs) on SiO2 substrate are presented. Metallic or semiconducting properties of ZGNRs are revealed due to various interactions between edge-hydrogenated ZGNRs and different SiO2 (0001) surfaces. Bivalent functional groups decorating ZGNRs serve as the bridge between active edges of ZGNRs and SiO2. These functional groups stabilize ZGNRs on substrate, as well as modify the edge states of ZGNRs and further affect their electronic properties. Band gaps are opened owing to edge states destruction and distorted lattice in ZGNRs.

Materials Science
Electronic Properties and Modulation Effects on Edge-Modified GeS 2 Nanoribbons

Li Jing-Hui,Cao Sheng-Guo,Han Jia-Ning,Li Zhan-Hai,Zhang Zhen-Hua,

DOI: https://doi.org/10.7498/aps.73.20231670

IF: 0.906

2024-01-01

Acta Physica Sinica

Abstract:GeS 2 monolayer has been successfully prepared. Here, to further expand their applications and discover new physical property, we construct armchair-type GeS 2 nanoribbons (AGeS 2 NR) and use different concentrations of H and O atoms for the edge modification, as well as their structural stability, electronic properties, carrier mobility, and physical field modulation effects are studied deeply. The results show that the edge-modified nanoribbons have a higher energy and thermal stability. The bare edge nanoribbons are nonmagnetic semiconductors, while the edge modification can change the bandgap of AGeS 2 NR and make them become wide or narrowed bandgap semiconductor, or a metal, which is closely related to the elimination or partial elimination of the edge states or the creation of hybridization bands. Thus edge modification extends the application range of nanoribbons in the field of electronic devices and optical devices. In addition, the carrier mobility is found to be very sensitive to the edge modification, the carrier mobility (electrons and holes) of nanoribbons can be tuned to have a difference up to one order of magnitude, and the carrier mobility polarization up to one order of magnitude occurs. Strain effect studies reveal that the semiconducting nanoribbons are robust in keeping the electronic phase unchanged over a wide strain range, which is useful for maintaining the stability of the electron transport in the related devices. Most of the semiconducting nanoribbons have the stability to keep the semiconducting properties unchanged under high external electric field, but the bandgap can be reduced significantly with the increase of the electric field. In short, this study provides a theoretical analysis and reference for understanding the property of GeS 2 nanoribbons and developing related devices.

physics, multidisciplinary
Tuning the Electronic and Magnetic Properties of Zigzag Silicene Nanoribbons by Edge Hydrogenation and Doping

Dang-Qi Fang,Sheng-Li Zhang,Hu Xu

DOI: https://doi.org/10.1039/c3ra42720j

IF: 4.036

2013-01-01

RSC Advances

Abstract:We have performed density-functional-theory calculations to study the electronic and magnetic properties of edge-hydrogenated and edge-doped zigzag silicene nanoribbons (ZSiNRs). The formation energies of monohydrogenated and dihydrogenated edges slightly depend on the width of ZSiNRs, whereas the electronic and magnetic properties of ZSiNRs can be tuned by the different forms of edge hydrogenation. The dihydrogenated edges can effectively stabilize the antiferromagnetic semiconducting ground state of ZSiNRs. Moreover, nitrogen- or phosphorus-doped monohydrogenated ZSiNR is a magnetic semiconductor, and becomes a half-metal under a transverse electric field. Owing to the compelling electronic and magnetic properties, silicene nanoribbons hold great promise for application in nanodevices.
Effect of Edge Dual-Hydrogenation on Electronic and Magnetic Properties of Armchair Silicon Carbide Nanoribbons

Shu-Ling Deng,Wen Zhou,Qian Liu,Dan Wu,Zhi-Qiang Fan,Fang Xie

DOI: https://doi.org/10.1016/j.physb.2024.416586

2024-01-01

Abstract:Using the first-principles calculations, we investigate the electronic and magnetic properties of armchair silicon carbide nanoribbon (aSiCNR) with different combinations of edge dual-hydrogenation. The dual-hydrogenation on the boundary Si or C atom changes it from sp(2) hybridization to sp(3) hybridization, which will have an important role on the stability of aSiCNR. Only the full dual-hydrogenation on the one edge or two edges don't change the band structure and magnetic moment of aSiCNR. However, the other different combinations of edge dual-hydrogenation can result in aSiCNR exhibiting metallic, semiconductor, and half-metallic properties under non-magnetism state, ferromagnetic and anti-ferromagnetic states. These results may present a new avenue for band engineering of aSiCNR, as well as valuable suggestions for the practical application of SiC based nanomaterials in spintronics and multifunctional nanodevices.
Effect of Edge Modification on the Zigzag Bc2n Nanoribbons

Xiang Xiao,Hong Li,Jun Tie,Jing Lu

DOI: https://doi.org/10.1016/j.cplett.2016.06.060

IF: 2.719

2016-01-01

Chemical Physics Letters

Abstract:We use first principles calculations to investigate the effects of edge modification with nonmetal species on zigzag-edged BC2N nanoribbons (ZBC2NNRs). These ZBC2NNRs show either semiconducting or metallic behaviors depending on the edge modifications and ribbon widths. We find that the O-modification induces a ferromagnetic ground state with a metallic behavior for all the ribbon widths investigated. And when the ribbon width is more than 3.32nm (NZ⩾16), an antiferromagnetic ground state with a half-metallic behavior is realized in the H-passivated ZBC2NNRs. These versatile electronic properties render the ZBC2NNRs a promising candidate material in nanoelectronics and nanospintronics.
Tuning the Electronic Structure of Graphene Nanoribbons Through Chemical Edge Modification: A Theoretical Study

Z. F. Wang,Qunxiang Li,Huaixiu Zheng,Hao Ren,Haibin Su,Q. W. Shi,Jie Chen

DOI: https://doi.org/10.1103/physrevb.75.113406

IF: 3.7

2007-01-01

Physical Review B

Abstract:We report combined first-principle and tight-binding (TB) calculations to simulate the effects of chemical edge modifications on structural and electronic properties. The C-C bond lengths and bond angles near the graphene nanoribbon (GNR) edge have considerable changes when edge carbon atoms are bounded to different atoms. By introducing a phenomenological hopping parameter t(1) for nearest-neighbor hopping to represent various chemical edge modifications, we investigated the electronic structural changes of nanoribbons with different widths based on the tight-binding scheme. Theoretical results show that addends can change the band structures of armchair GNRs and even result in observable metal-to-insulator transition.
Modulation of the electronic and magnetic properties of the silicene nanoribbons by a single C chain

Y.-L. Song,Y. Zhang,J.-M. Zhang,D.-B. Lu,K.-W. Xu

DOI: https://doi.org/10.1140/epjb/e2010-10627-5

2010-01-01

The European Physical Journal B

Abstract:. Under the generalized gradient approximation (GGA), the electronic and magnetic properties are studied for H-terminated zigzag edge Si nanoribbon (ZSiNR) decorated with a single C chain by using the first-principles projector augmented wave (PAW) potential within the density function theory (DFT) framework. The results show that either a perfect ZSiNR or a single C chain decorated ZSiNR, the ferromagnetic state is preferred over the antiferromagnetic state. But a single C chain decorated ZSiNR is more stable than the perfect one. Furthermore, the electronic and magnetic properties of a ZSiNR can be modulated in detail by a single C chain at different positions.
Edge-Specific Au/Ag Functionalization-Induced Conductive Paths In Armchair Mos2 Nanoribbons

Weifeng Li,Meng Guo,Gang Zhang,Yong-Wei Zhang

IF: 10.508

2014-01-01

Chemistry of Materials

Abstract:We perform first-principles calculations to investigate the electronic band structures of chemically functionalized armchair MoS2 nanoribbons by Au and Ag. It is found that the absolute values of the binding energies of these atoms on the edge of armchair MoS2 ribbons are much higher than their surface counterparts, greatly favoring the edge functionalization. Importantly, such edge functionalization causes a transition of the ribbons from semiconducting to metallic, and the conducting path is identified to be via Mo-dominated nonlocalized edge states. Surprisingly, the Fermi velocity of the charge carriers in the edge-functionalized ribbons not only is ultrahigh, comparable to that of graphene, but also can be precisely linearly tuned by varying edge functionalization concentration. The intriguing properties of these edge-functionalized MoS2 ribbons, such as high edge fiinctionalization specificity, semiconducting-to-metallic transition, and also high and tunable Fermi velocity, may open up whole new possibilities for fabricating novel MoS2-based electronic devices.
Electronic Structures of SiC Nanoribbons.

Lian Sun,Yafei Li,Zhenyu Li,Qunxiang Li,Zhen Zhou,Zhongfang Chen,Jinlong Yang,J. G. Hou

DOI: https://doi.org/10.1063/1.3006431

IF: 4.304

2008-01-01

The Journal of Chemical Physics

Abstract:Electronic structures of SiC nanoribbons have been studied by spin-polarized first-principles calculations. The armchair nanoribbons are nonmagnetic semiconductors, while the zigzag nanoribbons are magnetic metals. The spin polarization in the zigzag SiC nanoribbons is originated from the unpaired electrons localized on the ribbon edges. Interestingly, the zigzag nanoribbons narrower than approximately 4 nm present half-metallic behavior. Without the aid of external field or chemical modification, the metal-free half-metallicity predicted for narrow SiC zigzag nanoribbons opens a facile way for nanomaterial-based spintronics applications.
Silicane Nanoribbons: Electronic Structure and Electric Field Modulation

D. Q. Fang,Y. Zhang,S. L. Zhang

DOI: https://doi.org/10.1088/1367-2630/16/11/115006

2014-01-01

New Journal of Physics

Abstract:We present electronic band structure, Gibbs free energy of formation, and electric field modulation calculations for silicane nanoribbons (NRs), i.e., completely hydrogenated or fluorinated silicene NRs, using density functional theory. We find that although the completely hydrogenated silicene (H-silicane) sheet in the chair-like configuration is an indirect-band-gap semiconductor, a direct band gap can be achieved in the zigzag H-silicane NRs by using Brillouinzone folding. Compared to H-silicane NRs, the band gaps of completely fluorinated silicene (F-silicane) NRs reduce at least by half. For all silicane NRs considered here, the Gibbs free energy of formation is negative but shows different trends by changing the ribbon width for H-silicane NRs and F-silicane NRs. Furthermore, by analyzing the effect of transverse electric fields on the electronic properties of silicane NRs, we show that an external electric field can make the electrons and holes states spatially separated and even render silicane NRs self-doped. The tunable electronic properties of silicane NRs make them suitable for nanotechnology application.
Electronic properties of Penta-P 2 X (X= C and Si) nanoribbons: Density functional theory

Elmira Barzekar,Parinaz Hosseinpour,Mohammad Hossein Hekmatshoar,Ghasem Rezaei,Jaafar Jalilian

DOI: https://doi.org/10.1016/j.physb.2024.415684

IF: 2.988

2024-01-21

Physica B Condensed Matter

Abstract:In this work, using the density functional theory, the electronic properties of pentagonal P 2 C and P 2 Si nanoribbons have been investigated. These properties include the optimal structural parameters, cohesive energy, electronic band structures, total density of states, and the partial density of states. The results indicated that pentagonal nanoribbons have diverse electronic and magnetic properties depending on their width and edge configuration. The calculations showed that the electronic properties of these pentagonal nanoribbons vary from semiconducting to half-metallic concerning edge structure, suggesting their potential for application in spintronic. Following the hydrogenation of the nanoribbons' edges, a metallic-to-semiconducting transition was observed. These findings provide the potential of Penta-P 2 C and Penta-P 2 Si nanoribbons in fabricating next-generation electronic and magnetic devices.

physics, condensed matter
Edge-functionalized and substitutional doped graphene nanoribbons: electronic and spin properties

F. Cervantes-Sodi,G. Csányi,S. Piscanec,A. C. Ferrari

DOI: https://doi.org/10.1103/PhysRevB.77.165427

2007-11-16

Abstract:Graphene nanoribbons are the counterpart of carbon nanotubes in graphene-based nanoelectronics. We investigate the electronic properties of chemically modified ribbons by means of density functional theory. We observe that chemical modifications of zigzag ribbons can break the spin degeneracy. This promotes the onset of a semiconducting-metal transition, or of an half-semiconducting state, with the two spin channels having a different bandgap, or of a spin-polarized half-semiconducting state -where the spins in the valence and conduction bands are oppositely polarized. Edge functionalization of armchair ribbons gives electronic states a few eV away from the Fermi level, and does not significantly affect their bandgap. N and B produce different effects, depending on the position of the substitutional site. In particular, edge substitutions at low density do not significantly alter the bandgap, while bulk substitution promotes the onset of semiconducting-metal transitions. Pyridine-like defects induce a semiconducting-metal transition.

Materials Science
Modulation of electronic and magnetic properties in InSe nanoribbons: edge effect

Meng Wu,Jun-jie Shi,Min Zhang,Yi-min Ding,Hui Wang,Yu-lang Cen,Wen-hui Guo,Shu-hang Pan,Yao-hui Zhu

DOI: https://doi.org/10.1088/1361-6528/aab3f5

IF: 3.5

2018-03-23

Nanotechnology

Abstract:Quite recently, the two-dimensional (2D) InSe nanosheet has become a hot material with great promise for advanced functional nano-devices. In this work, for the first time, we perform first-principles calculations on the structural, electronic, magnetic and transport properties of 1D InSe nanoribbons with/without hydrogen or halogen saturation. We find that armchair ribbons, with various edges and distortions, are all nonmagnetic semiconductors, with a direct bandgap of 1.3 (1.4) eV for bare (H-saturated) ribbons, and have the same high electron mobility of about 103 cm2V-1s-1 as the 2D InSe nanosheet. Zigzag InSe nanoribbons exhibit metallic behavior and diverse intrinsic ferromagnetic properties, with the magnetic moment of 0.5-0.7 μ B per unit cell, especially for their single-edge spin polarization. The edge spin orientation, mainly dominated by the unpaired electrons of the edge atoms, depends sensitively on the edge chirality. Hydrogen or halogen saturation can effectively recover the structural distortion, and modulate the electronic and magnetic properties. The binding energy calculations show that the stability of InSe nanoribbons is analogous to that of graphene and better than in 2D InSe nanosheets. These InSe nanoribbons, with novel electronic and magnetic properties, are thus very promising for use in electronic, spintronic and magnetoresistive nano-devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Electronic structure regulation of AlN/SiC nanoribbons through edge passivation with different atoms and doping with various transition metal atoms

Maoye Yin,Xiangyang Tan,Keyuan Wang,Hengshuai Li,Dong Fan,Zhihao Wang,Haiquan Hu,Zhaogang Nie,Feng Guo,Zhenbao Feng,Jun Li,Dong Zhang,Minghui Zhu,Fei Wang

DOI: https://doi.org/10.1016/j.cjph.2024.11.007

IF: 3.957

2024-11-20

Chinese Journal of Physics

Abstract:Highlights • The edge passivation of AlN/SiC nanoribbons was performed using different atoms. (Cl, F, H, O) • After edge passivation with different atoms, four transition metal atoms (Mn, Fe, Co, Ni) were used to regulate the properties. • The use of Cl and F atoms for edge passivation is more conducive to regulating its properties. • Magnetic properties can be directly induced by edge passivation using O atoms. In this paper, based on first principles, density functional theory is used to investigate the doping of transition metal atoms (Mn, Fe, Co, Ni) in AlN/SiC nanoribbons with edge passivation by different atoms (Cl, F, H, O) to induce magnetism and modulate properties. The research results show that the new structures proposed in this study with doping of transition metal atoms induce magnetism and a transition of properties. First, calculations determined the ferromagnetic coupling state to be the most stable state of the initial magnetic structure. Then, band structures, the density of states, and charge densities were analyzed to investigate the transition of properties. The AlN/SiC nanoribbons with Ni doping in Cl, F, and H atom edge-passivated structures all transitioned to half-metallic properties. Half-metal properties appeared in the AlN/SiC nanoribbons with Fe and Co doping in O atom edge-passivated structures, enabling the generation of 100% spin-polarised current at the Fermi level. In addition, other structures exhibited properties of narrow bandgap semiconductors and metals. Furthermore, we used molecular dynamics simulations to verify the stability of the structures, demonstrating that the structures proposed in this study can stably exist. This provides more ideas and potential applications for the development of spintronics devices. Graphical Download: Download high-res image (224KB) Download: Download full-size image

physics, multidisciplinary
Edge-dependent electronic transport and diode effect in C3N nanoribbons

Golibjon Berdiyorov

DOI: https://doi.org/10.1088/1402-4896/ad3862

2024-03-29

Physica Scripta

Abstract:Quantum transport calculations are conducted for C3N nanoribbons with different edge termina- tions within the nonequilibrium Green's functional formalism in combination with density functional theory. The electronic transport in the system strongly depends on properties of the edge states. For example, the current in metallic carbon-terminated nanoribbons is several orders of magni- tude higher than the current in nitrogen terminated nanoribbon with a semiconducting nature. In addition, C-terminated nanoribbons show very pronounced negative differential resistance. A diode structure with rectification ratio of 10 is proposed consisting of heterojunction of C- and N-terminated nanoribbons is proposed. These findings can be of practical importance in creating functional device structures from this 2D material.

physics, multidisciplinary
Tailoring Of The Structural, Energetic And Electronic Properties Of Silicene-Based Nanostructures

xianqing lin,chao lian,jun ni

DOI: https://doi.org/10.1088/1742-6596/491/1/012005

2014-01-01

Abstract:Silicene-based nanostructures are highly promising for future applications in electronics as silicon is an important element for conventional semiconductor industry. In our recent works, we have studied the effect of external electric filed, strain and metal adatoms on tailoring the structural, energetic and electronic properties of silicene-based nanostructures using first-principles and tight-binding methods. We find that half-metallicity can be realized in zigzag silicene nanoribbons when applying electric field across the nanoribbon width. Under small tensile strain, some armchair silicene nanoribbons are predicted to have linear energy dispersion around the Fermi level. And strain-induced structural phase transitions are observed in silicene bilayers in which strong covalent interlayer bonds form. When metal atoms are adsorbed on silicene, several metal adatoms obtain a larger binding energy than the cohesive energy of the bulk metal and the bonding between the metal atoms and silicene can be ionic or covalent.

Adjusting the Electronic Properties of Silicon Carbide Nanoribbons by Introducing Edge Functionalization

The Effect of Edge Functionalization on the Device Performance of Monolayer Si 0.5 Ge 0.5 Nanoribbon Transistors

Electrical properties and spintronic application of carbon phosphide nanoribbons with edge functionalization

Electronic characterization of bilayer silicene nanoribbons

Electronic properties of edge-functionalized zigzag graphene nanoribbons on SiO2 substrate

Electronic properties of edge-functionalized zigzag graphene nanoribbons on SiO2 substrate-v2

Electronic Properties and Modulation Effects on Edge-Modified GeS 2 Nanoribbons

Tuning the Electronic and Magnetic Properties of Zigzag Silicene Nanoribbons by Edge Hydrogenation and Doping

Effect of Edge Dual-Hydrogenation on Electronic and Magnetic Properties of Armchair Silicon Carbide Nanoribbons

Effect of Edge Modification on the Zigzag Bc2n Nanoribbons

Tuning the Electronic Structure of Graphene Nanoribbons Through Chemical Edge Modification: A Theoretical Study

Modulation of the electronic and magnetic properties of the silicene nanoribbons by a single C chain

Edge-Specific Au/Ag Functionalization-Induced Conductive Paths In Armchair Mos2 Nanoribbons

Electronic Structures of SiC Nanoribbons.

Silicane Nanoribbons: Electronic Structure and Electric Field Modulation

Electronic properties of Penta-P 2 X (X= C and Si) nanoribbons: Density functional theory

Edge-functionalized and substitutional doped graphene nanoribbons: electronic and spin properties

Modulation of electronic and magnetic properties in InSe nanoribbons: edge effect

Electronic structure regulation of AlN/SiC nanoribbons through edge passivation with different atoms and doping with various transition metal atoms

Edge-dependent electronic transport and diode effect in C3N nanoribbons

Tailoring Of The Structural, Energetic And Electronic Properties Of Silicene-Based Nanostructures