Edge-dependent electronic transport and diode effect in C3N nanoribbons

Golibjon Berdiyorov
DOI: https://doi.org/10.1088/1402-4896/ad3862
2024-03-29
Physica Scripta
Abstract:Quantum transport calculations are conducted for C3N nanoribbons with different edge termina- tions within the nonequilibrium Green's functional formalism in combination with density functional theory. The electronic transport in the system strongly depends on properties of the edge states. For example, the current in metallic carbon-terminated nanoribbons is several orders of magni- tude higher than the current in nitrogen terminated nanoribbon with a semiconducting nature. In addition, C-terminated nanoribbons show very pronounced negative differential resistance. A diode structure with rectification ratio of 10 is proposed consisting of heterojunction of C- and N-terminated nanoribbons is proposed. These findings can be of practical importance in creating functional device structures from this 2D material.
physics, multidisciplinary
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