Abstract:GeS 2 monolayer has been successfully prepared. Here, to further expand their applications and discover new physical property, we construct armchair-type GeS 2 nanoribbons (AGeS 2 NR) and use different concentrations of H and O atoms for the edge modification, as well as their structural stability, electronic properties, carrier mobility, and physical field modulation effects are studied deeply. The results show that the edge-modified nanoribbons have a higher energy and thermal stability. The bare edge nanoribbons are nonmagnetic semiconductors, while the edge modification can change the bandgap of AGeS 2 NR and make them become wide or narrowed bandgap semiconductor, or a metal, which is closely related to the elimination or partial elimination of the edge states or the creation of hybridization bands. Thus edge modification extends the application range of nanoribbons in the field of electronic devices and optical devices. In addition, the carrier mobility is found to be very sensitive to the edge modification, the carrier mobility (electrons and holes) of nanoribbons can be tuned to have a difference up to one order of magnitude, and the carrier mobility polarization up to one order of magnitude occurs. Strain effect studies reveal that the semiconducting nanoribbons are robust in keeping the electronic phase unchanged over a wide strain range, which is useful for maintaining the stability of the electron transport in the related devices. Most of the semiconducting nanoribbons have the stability to keep the semiconducting properties unchanged under high external electric field, but the bandgap can be reduced significantly with the increase of the electric field. In short, this study provides a theoretical analysis and reference for understanding the property of GeS 2 nanoribbons and developing related devices.

Edge modified zigzag GeS nanoribbon devices with tunable electronic properties and significant negative differential resistance effect: A first principle study

Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

The Effect of Edge Functionalization on the Device Performance of Monolayer Si 0.5 Ge 0.5 Nanoribbon Transistors

Negative Differential Resistance and Rectification Effects in Step-Like Graphene Nanoribbons

Electronic Properties and Modulation Effects on Edge-Modified GeS 2 Nanoribbons

Effect of Edge Modification on the Zigzag Bc2n Nanoribbons

Homostructured negative differential resistance device based on zigzag phosphorene nanoribbons

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.

Half Metallicity along the Edge of Zigzag Boron Nitride Nanoribbons

Tunable Half-Metallicity and Edge Magnetism of H-saturated InSe Nanoribbons

Doping-induced Giant Rectification and Negative Differential Conductance (NDC) Behaviors in Zigzag Graphene Nano-Ribbon Junction

Effect of the Edge States on the Conductance and Thermopower in Zigzag Phosphorene Nanoribbons

Electronic properties of edge-functionalized zigzag graphene nanoribbons on SiO2 substrate

Electronic properties of edge-functionalized zigzag graphene nanoribbons on SiO2 substrate-v2

Theoretical study on the negative differential resistance behavior of N-doped GeSe monolayer

First-principle study of edge-modified ZGNRs and nickel contact

Quantum confinement and edge effects on electronic properties of zigzag green phosphorene nanoribbons

Electronic structures and transport properties of cove-edged graphene nanoribbons

Edge-dependent electronic transport and diode effect in C3N nanoribbons

Z-Like Conducting Pathways in Zigzag Graphene Nanoribbons with Edge Protrusions