Impact of Molybdenum Oxide Electrode on the Ferroelectricity of Doped-Hafnia Oxide Capacitors
Ruiting Zhao,Ting Liu,Xiaoyue Zhao,Houfang Liu,Minghao Shao,Qixin Feng,Xichen Sun,Xiaoming Wu,Yi Yang,Tian-Ling Ren
DOI: https://doi.org/10.1109/ted.2021.3138843
IF: 3.1
2022-03-01
IEEE Transactions on Electron Devices
Abstract:In this article, we investigate the role of MoOx oxide electrodes on the ferroelectric properties of hafnium zirconium oxide (HZO) capacitors. The MoOx oxide electrodes were deposited under different oxygen partial pressure ratios ($\text{O}_{\text {ppr}}$ : 0%, 5%, 10%, and 15%) during the sputtering process. The remnant polarization (${P}_{r}$ ) of the HZO capacitors with MoOx electrodes (18.9 $\mu \text{C}$ /cm2 for 10% $\text{O}_{\text {ppr}}$ ) are improved higher than that of the TiN electrode (14.9 $\mu \text{C}$ /cm2) by 27%. In addition, the HZO films with MoOx electrodes have smaller leakage current and larger breakdown electric field (${E}_{\text {BD}}$ ). Based on the polarization reversal theory, the interfacial capacitance (${C}_{i}$ ) and coercive field (${E}_{c}$ ) were calculated in the case of the devices with MoOx electrodes, indicating that the MoOx electrode can minimize the thickness of the non-ferroelectric dead layer at the bottom interface. These results are expected to provide a new way out to optimize the interface quality and ferroelectricity in HZO-based capacitors and ferroelectric memory.
engineering, electrical & electronic,physics, applied