Abstract:Pt/PbZr0.53Ti0.47O3 (PZT)/LaAlO3 (LAO)/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3 (LSCO)/LaAlO3/Si structures for ferroelectric field effect memory applications were fabricated on n-type Si substrate by pulsed laser deposition (PLD). The Auger electron spectrometry (AES) analysis shows that a LaAlO3 buffer layer can effectively prevent Si and Ti, Pb interdiffusion between PZT and Si substrate. For both of the structure, the current density–voltage measurement shows a typical leakage current density of about 10−7A/cm2 at 8V applied voltage. Furthermore, it has been demonstrated that the PbZr0.53Ti0.47O3/LaAlO3/Si structures and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si structures exhibit ferroelectric switching properties, showing a memory window as large as 2 and 2.9V, respectively, under a ramp rate of 200mV/s from −6 to +6V driving voltage at 1MHz. It is believed that the La0.85Sr0.15CoO3 buffer layer deposited on LaAlO3 layer can improve the crystalline properties of PZT films, and then result in lager polarization of PZT and lager memory windows for Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si structures.

Fabrication and Properties of $\hbox{Pt}/\hbox{Bi}_{3.15}\hbox{Nd}_{0.85} \hbox{Ti}_{3}\hbox{O}_{12}/\break\hbox{HfO}_{2}/\hbox{Si}$ Structure for Ferroelectric DRAM (FEDRAM) FET

Fabrication And Properties Of Pt/Bi3.15nd0.85ti3o12/Hfo2/Si Structure For Ferroelectric Dram (Fedram) Fet

Characterization Of Pt/Bi3.15nd0.85ti3o12/Hfo2/Si Structure Using A Hafnium Oxide As Buffer Layer For Ferroelectric-Gate Field Effect Transistors

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Interface Studies And Electronic Properties Of Silicon Based Nd-Doped Bismuth Titanate

Buffer layer dependence of Ba3.15Nd0.85Ti 3O12 (BNdT) based MFIS capacitor for FeFET application

M/Bi3.4La0.6Ti3O12/I/Si capacitors for the application in FEDRAM

Study Of Bi2ti2o7-Based Metal-Ferroelectric-Semiconductor (Mfs) Fet

Fabrication and Properties of MFIS FET for NDRO Ferroelectric Memory Application

Characteristics of Pt/BiFeO3/TiO2/Si Capacitors with TiO2 Layer Formed by Liquid-Delivery Metal Organic Chemical Vapor Deposition

C–V Characteristics of Pt/PbZr0.53Ti0.47O3/LaAlO3/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si Structures for Ferroelectric Gate FET Memory

Characterization of Pt/BiFeO 3/ZrO 2/Si capacitors for memory applications

Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization

5.1 Å EOT and low leakage TiN/Al2O3/Hf0.5Zr0.5O2/Al2O3/TiN heterostructure for DRAM capacitor

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

Etching behavior and damage rejuvenation of top electrode and Bi 3:15Nd0:85Ti3O12 films applied in ferroelectric random access memory devices

ATOMIC LAYER DEPOSITION HfO2 FILM USED AS BUFFER LAYER OF THE Pt/(Bi0.95Nd0.05)(Fe0.95Mn0.05)O3/HfO2/Si CAPACITORS FOR FeFET APPLICATION

Ferroelectric materials for 64 Mb and 256 Mb DRAMs

Etching Behavior and Damage Rejuvenation of Top Electrode and Bi3.15Nd0.85Ti3O12 Films Applied in Ferroelectric Random Access Memory Devices

Properties Of Neodymium-Doped Bi4ti3o12 Thin Films For Ferroelectric Random Access Memory

A Silicon-Based Pt/Pzt/Pt Sandwich Structure For Memory Devices