Abstract:Two-dimensional (2D) atomic-layered heterostructures stacked by van der Waals interactions recently introduced new research fields, which revealed novel phenomena and provided promising applications for electronic, optical, and optoelectronic devices. In this study, we report the van der Waals epitaxial growth of high-quality atomically thin Bi2Se3 on single crystalline hexagonal boron nitride (h-BN) by chemical vapor deposition. Although the in-plane lattice mismatch between Bi2Se3 and h-BN is approximately 65%, our transmission electron microscopy analysis revealed that Bi2Se3 single crystals epitaxially grew on h-BN with two commensurate states; that is, the (1̅21̅0) plane of Bi2Se3 was preferably parallel to the (1̅100) or (1̅21̅0) plane of h-BN. In the case of the Bi2Se3 (2̅110) ∥ h-BN (11̅00) state, the Moiré pattern wavelength in the Bi2Se3/h-BN superlattice can reach 5.47 nm. These naturally formed thin crystals facilitated the direct assembly of h-BN/Bi2Se3/h-BN sandwiched heterostructures without introducing any impurity at the interfaces for electronic property characterization. Our quantum capacitance (QC) measurements showed a compelling phenomenon of thickness-dependent topological phase transition, which was attributed to the coupling effects of two surface states from Dirac Fermions at/or above six quintuple layers (QLs) to gapped Dirac Fermions below six QLs. Moreover, in ultrathin Bi2Se3 (e.g., 3 QLs), we observed the midgap states induced by intrinsic defects at cryogenic temperatures. Our results demonstrated that QC measurements based on h-BN/Bi2Se3/h-BN sandwiched structures provided rich information regarding the density of states of Bi2Se3, such as quantum well states and Landau quantization. Our approach in fabricating h-BN/Bi2Se3/h-BN sandwiched device structures through the combination of bottom-up growth and top-down dry transferring techniques can be extended to other two-dimensional layered heterostructures.

High-quality BN/WSe2/BN heterostructure and its quantum oscillations

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS 0.6 Se 1.4 .

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Novel Optical and Electrical Transport Properties in Atomically Thin WSe2/MoS2 p–n Heterostructures

Van Der Waals Epitaxial Growth of Atomically Thin Bi2se3 and Thickness-Dependent Topological Phase Transition

Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe2/hBN Heterostructures by Photoluminescence Excitation Experiments

Observation of Quantized Hall Effect and Shubnikov-de Hass Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers

Exciton spectroscopy and unidirectional transport in MoSe 2 -WSe 2 lateral heterostructures encapsulated in hexagonal boron nitride

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

Electron and hole doping of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride

Versatile van der Waals heterostructures of γ-GeSe with h-BN/graphene/MoS2

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

Low-Temperature 2D/2D Ohmic Contacts in WSe$_2$ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition

Versatile van der Waals Heterostructures of Gamma-GeSe with h-BN/Graphene/MoS2

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures

First-principles Study on Band Gaps and Transport Properties of Van Der Waals WSe2/WTe2 Heterostructure

SnSe field-effect transistors with improved electrical properties

Controlling phase transition in WSe2 towards ideal n-type transistor