Abstract:Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe2/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (T = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A'1 (WSe2) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe2 monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe2 monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX0 at double resonance condition is observed for the first time.

Electron and hole doping of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

High-quality BN/WSe2/BN heterostructure and its quantum oscillations

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Visualizing Giant Ferroelectric Gating Effects in Large-Scale WSe2/BiFeO3 Heterostructures

Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy

Modulation doping and charge density wave transition in layered PbSe-VSe2 ferecrystal heterostructures

Electron and Hole Mobilities in Single-Layer WSe2

Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions

A Gate-Free Monolayer WSe 2 Pn Diode

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

Ferroelectric driven exciton and trion modulation in monolayer MoSe2 and WSe2

Visualizing giant ferroelectric gating effects in large-scale WSe$_2$/BiFeO$_3$ heterostructures

Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe2/hBN Heterostructures by Photoluminescence Excitation Experiments

Enhanced Field-Effect Control of Single-Layer WS2 Optical Features by hBN Full Encapsulation

Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS 0.6 Se 1.4 .

Exciton spectroscopy and unidirectional transport in MoSe 2 -WSe 2 lateral heterostructures encapsulated in hexagonal boron nitride

Reversible doping polarity and ultrahigh carrier density in two-dimensional van der Waals ferroelectric heterostructures

Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures

Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

From the synthesis of hBN crystals to their use as nanosheets in van der Waals heterostructures