Conduction Band-offset in GeO2/Ge Stack Determined by Internal Photoemission Spectroscopy

W. F. Zhang,T. Nishimula,K. Nagashio,K. Kita,A. Toriumi
DOI: https://doi.org/10.1149/05004.0091ecst
2012-01-01
Abstract:The conduction band offset (CBO) at GeO 2 /Ge interface has been systematically investigated by using internal photoemission spectroscopy (IPE). Irrespective of the metal gate electrode (Au or Al) and Ge substrate type (p- or n- type) variance, the energy barrier for the electrons of Ge valence band into GeO 2 conduction band is determined to be 2.34 ±0.1eV, thus yielding the CBO of 1.65 ± 0.1eV. Such as-obtained >1.5eV CBO agrees well with previous IPE results measured on the ultra-thin GeOx/High-k oxide stacks and theoretical calculation without the valence alternation pair, and gives further support of GeO 2 as potential passivation layer for the future Ge-based CMOS devices.
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