Ultrabroadband Low Dispersion Silicon-on-Nitride Waveguide in Mid-Infrared Region

Yang Yue,Lin Zhang,Raymond G. Beausoleil,Alan E. Willner

DOI: https://doi.org/10.1364/iprsn.2010.iwh4

2010-01-01

Abstract:The designed silicon-on-nitride waveguide illustrates an ultrabroadband (~4200 nm) low chromatic dispersion (±0.05 ps/(nm·m)) in mid-infrared wavelength region. This provides a good nonlinear medium for broadband signal processing.

What problem does this paper attempt to address?

Silicon-on-Nitride Waveguide with Ultralow Dispersion over an Octave-Spanning Mid-Infrared Wavelength Range

Yang Yue,Lin Zhang,Hao Huang,Raymond G. Beausoleil,Alan E. Willner

DOI: https://doi.org/10.1109/jphot.2011.2180016

IF: 2.4

2011-01-01

IEEE Photonics Journal

Abstract:The proposed silicon-on-nitride (SON) waveguide exhibits an ultrabroadband (4200 nm), low chromatic dispersion in the mid-infrared (MIR) wavelength region from 2430 to 6630 nm. It has two zero-dispersion wavelengths within the span. Even at 6 , the nonlinear coefficients of the SON waveguides are still comparable with the ones of integrated waveguides around 1550 nm, which are widely used for octave-spanning nonlinear process. This enables a potential nonlinear optical platform for broadband signal processing across the over-one-octave MIR bandwidth.
Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Zhihua Tu,Qiang Jin,Xibin Li,Shiming Gao

DOI: https://doi.org/10.1364/josab.35.001772

2018-01-01

Abstract:Mid-infrared (MIR) integrated waveguides with strong local field enhancement and relatively low loss have shown their potential in nonlinear optical applications. We present a novel highly nonlinear silicon hybrid waveguide by setting an insulator-metal-insulator structure with [2-[4-(dimethylamino)phenyl]-3-([4-(dimethylamino)phenyl]ethynyl)buta-1,3-diene-1,1,4,4-tetracarbonitrile] (DDMEBT) and silver materials into the silicon slot. The mode field is strongly confined in the DDMEBT layers via the surface plasmon polariton effect. Two rectangular silicon nanobridges are used to further confine the optical field and reduce the loss simultaneously. The waveguide dimensions are optimized to obtain a figure of merit as high as 0.55 at 2.1 mu m and a zero-dispersion wavelength of 2.06 mu m. In a 6.6-mm-long waveguide, a maximum four-wave mixing efficiency of -6.65 dB and a bandwidth of 512 nm (1.894-2.406 mu m) can be simultaneously obtained, pumped by a 2.104-mu m source with a power of only 500 mW. Our designed waveguide exhibits excellent overall performance for nonlinear optical applications such as all-optical signal processing in the MIR band. (C) 2018 Optical Society of America
Design of Mid-Infrared Nonlinear Silicon–germanium Waveguides for Broadband/discrete-Band Wavelength Conversion

Dongsheng Lyu,Qiang Jin,Shiming Gao

DOI: https://doi.org/10.1364/josab.35.000741

2018-01-01

Journal of the Optical Society of America B

Abstract:A dispersion-engineered silicon-germanium (Si0.8Ge0.2) waveguide is designed for mid-infrared (MIR) broadband or discrete-band wavelength conversion by using its advantages of high nonlinearity and tight mode-field confinement. The dispersion of this waveguide is engineered by optimizing the waveguide geometry. The zero-dispersion wavelength is tuned to about 2 mu m, and the dispersion curve is flattened to reduce the dispersion slope. In the MIR band, the 3 dB bandwidth for the four-wave mixing effect reaches 795 nm, and the peak conversion efficiency is -25.0 dB when the pump power is 500 mW, which can support the broadband all-optical wavelength conversion for next-generation MIR optical communications. Discrete-band wavelength conversion between the MIR (2.5-3.8 mu m) and telecommunication (1.30-1.72 mu m) bands is realized by using the pair of phase-matching wavelengths far away from the pump. Moreover, by choosing proper waveguide geometries, the signals in the band of 2.0-3.8 mu m can be efficiently converted to the idler with fixed wavelength of 1.55 mu m, which exhibits the potential to realize indirect detection by using telecommunication-band detectors to detect MIR signals. (C) 2018 Optical Society of America
Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Zhihua Tu,Daru Chen,Hao Hu,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.3390/app10228087

2020-01-01

Applied Sciences

Abstract:Optical communication using the 2 μm wavelength band is attracting growing attention for the sake of mitigating the information ‘capacity crunch’ on the way, where on-chip nonlinear waveguides can play vital roles. Here, silicon-rich nitride (SRN) ridge waveguides with different widths and rib heights are fabricated and measured. Linear characterizations show a loss of ~2 dB/cm of the SRN ridge waveguides and four-wave mixing (FWM) experiments with a continuous wave (CW) pump reveal a nonlinear refractive index of ~1.13 × 10−18 m2/W of the SRN material around the wavelength 1950 nm. With the extracted parameters, dimensions of the SRN ridge waveguides are optimally designed for improved nonlinear performances for the 2 μm band, i.e., a maximal nonlinear figure of merit (i.e., the ratio of nonlinearity to loss) of 0.0804 W−1 or a super-broad FWM bandwidth of 518 nm. Our results and design method open up new possibilities for achieving high-performance on-chip nonlinear waveguides for long-wavelength optical communications.
Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Bowei Dong,Xin Guo,Chong Pei Ho,Bo Li,Hong Wang,Chengkuo Lee,Xianshu Luo,Guo-Qiang Lo

DOI: https://doi.org/10.1109/jphot.2017.2692039

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:In this paper, we demonstrate silicon-on-insulator (SOI) channel waveguides with propagation loss and $r$ = 10 $\mu$$\text{m}$ bends with bending loss as low as 2 dB/cm and 0.02 dB/90 $^{\circ }$ in the broad wavelength range of 3.68–3.88 $\mu$ $\text{m}$. We also indicate the limitation of SOI waveguide loss in mid-infrared wavelength by analyzing loss mechanisms. Based on this high-performance mid-infrared waveguide, we systematically analyze the coupling efficiency of various directional couplers, which are critical and commonly used building blocks for on-chip light routing and power splitting. By varying coupling length and sweeping wavelength, the performance of directional coupler with various gap separations is meticulously investigated in 3.68–3.88 $\mu$ $\text{m}$. A experimental database for directional coupler with any power splitting ratio is provided. Our results offer a promising broadband platform for dense wavelength division multiplexing (DWDM) and applications that require precise control of coupling such as racetrack resonator in the mid-infrared region.
Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Wei Li,P. Anantha,Shuyu Bao,Kwang Hong Lee,Xin Guo,Ting Hu,Lin Zhang,Hong Wang,Richard Soref,Chuan Seng Tan

DOI: https://doi.org/10.1063/1.4972183

IF: 4

2016-01-01

Applied Physics Letters

Abstract:A germanium-based platform with a large core-clad index contrast, germanium-on-silicon nitride waveguide, is demonstrated at mid-infrared wavelength. Simulations are performed to verify the feasibility of this structure. This structure is realized by first bonding a silicon-nitride-deposited germanium-on-silicon donor wafer onto a silicon substrate wafer, followed by the layer transfer approach to obtain germanium-on-silicon nitride structure, which is scalable to all wafer sizes. The misfit dislocations which initially form along the interface between germanium/silicon can be removed by chemical mechanical polishing after layer transfer process resulting in a high-quality germanium layer. At the mid-infrared wavelength of 3.8 μm, the germanium-on-silicon nitride waveguide has a propagation loss of 3.35 ± 0.5 dB/cm and a bend loss of 0.14 ± 0.01 dB/bend for a radius of 5 μm for the transverse-electric mode.
Achieving Uniform Chromatic Dispersion over a Wide Wavelength Range in Highly Nonlinear Slot Waveguides

lin zhang,yang yue,yinying xiaoli,jian wang,raymond g beausoleil,alan e willner

DOI: https://doi.org/10.1364/fio.2009.fthe2

2009-01-01

Abstract:We show dispersion-flattened silicon slot waveguides with high nonlinearity for on-chip signal processing applications, which exhibits a flat near-zero dispersion within ±0.12 ps/nm/m over a 302-nm wavelength range with nonlinear coefficient γ up to 4300 /m/W at 1550 nm.
Low chromatic dispersion of ±16 ps/(nm·km) over a 550-nm wavelength range using a strip/slot hybrid silicon waveguide

lin zhang,yang yue,yinying xiaoli,raymond g beausoleil,alan e willner

DOI: https://doi.org/10.1364/cleo.2010.jthe42

2010-01-01

Abstract:We propose a dispersion-flattened silicon waveguide that exhibits a flat and near-zero dispersion within ±16 ps/nm/km over a 550-nm wavelength range. Averaged dispersion can be shifted from negative to positive with almost the same flatness.
Dispersion Optimization of Silicon Nitride Waveguides for Efficient Four-Wave Mixing

Yaping Hong,Yixiao Hong,Jianxun Hong,Guo-Wei Lu

DOI: https://doi.org/10.3390/photonics8050161

IF: 2.536

2021-01-01

Photonics

Abstract:Silicon nitride waveguides have emerged as an excellent platform for photonic applications, including nonlinear optical signal processing, owing to their relatively high Kerr nonlinearity, negligible two photon absorption, and wide transparent bandwidth. In this paper, we propose an effective approach using 3D finite element method to optimize the dispersion characteristics of silicon nitride waveguides for four-wave mixing (FWM) applications. Numerical studies show that a flat and low dispersion profile can be achieved in a silicon nitride waveguide with the optimized dimensions. Near-zero dispersion of 1.16 ps/km/nm and 0.97 ps/km/nm at a wavelength of 1550 nm are obtained for plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD) silicon nitride waveguides, respectively. The fabricated micro-ring resonator with the optimized dimensions exhibits near-zero dispersion of −0.04 to −0.1 ps/m/nm over a wavelength range of 130 nm which agrees with the numerical simulation results. FWM results show that near-zero phase mismatch and high conversion efficiencies larger than −12 dB using a low pump power of 0.5 W in a 13-cm long silicon nitride waveguide are achieved.
Soliton-induced mid-infrared dispersive wave in horizontally-slotted Si3N4 waveguide

Yuxi Fang,Changjing Bao,Zhi Wang,Hao Zhang,Zhongqi Pan,Yang Yue

DOI: https://doi.org/10.1109/access.2022.3182219

IF: 3.9

2022-01-01

IEEE Access

Abstract:The flexibility of producing two dispersive waves (DWs) in silicon nitride (Si3N4) slot waveguide is demonstrated, by tailoring the slot features and the corresponding phase-matching condition. DWs are generated at visible and mid-infrared (mid-IR) wavelength regions, respectively. We obtain a broadband low normal dispersion region from 2 to 5.25 μm, which offers particular advantages for DW generation at mid-IR wavelength region. The long-wave dispersive wave (LWDW) can cover beyond 4 μm. This is the first time to illustrate the freedom of Si3N4 slot waveguide for DWs generation ever reported. A broadband spectrum can be extended from 0.5 to 4.5 μm at -30 dB level by launching a 1-kW 1550-nm hyperbolic secant input pump pulse to a 1-cm proposed waveguide. The newly formed spectrum has a high degree of coherence. This approach provides more flexibility for frequency conversion, and has the advantages for biophotonics, optical sensing, chip-integrated spectroscopy, health and environmental monitoring.
Optical Signal Processing In Silicon Nano-Waveguides

Yikai Su,Qiang Li,Fangfei Liu,Ziyang Zhang,Min Qiu

DOI: https://doi.org/10.1109/OECCACOFT.2008.4610555

2008-01-01

Abstract:All-optical tunable delay, dense wavelength conversion, and non return-to-zero (NRZ) to alternate-mark-inversion (AMI) format conversion are experimentally demonstrated using silicon microrings with a 450 x 250 nm cross-section size.
2Μm Mid-Infrared Silicon-Rich Silicon Nitride/silicon Hybrid Nonlinear Waveguides

Zhihua Tu,Xiaowei Guan,Daru Chen,Hao Hu,Xiaoyan Wang,Shiming Gao

DOI: https://doi.org/10.1016/j.optcom.2020.126544

IF: 2.4

2020-01-01

Optics Communications

Abstract:A silicon-rich silicon nitride (SRN)/silicon hybrid waveguide is proposed for 2 mu m mid-infrared (MIR) nonlinear applications. In the 1950 nm band, the measured linear loss and nonlinear coefficient for TE mode are 18.6 dB/cm and 7.9 W-1 m(-1), respectively. In a 4-mm-long SRN/silicon hybrid waveguide, the four-wave mixing conversion efficiency reaches -52.3 dB and the 3-dB conversion bandwidth is predicted to be 78 nm when the pump power is only 159 mW. As the nonlinear losses increase with pump power increasing, the nonlinear performance of our hybrid waveguide would exceed that of silicon waveguide when pump power is large and thus our hybrid waveguide is of potential for 2 mu m MIR nonlinear applications.
Single-mode Dispersion-engineered Nonlinear Integrated Waveguides for Ultra-broadband Optical Amplification and Wavelength Conversion

Ping Zhao,Vijay Shekhawat,Marcello Girardi,Zonglong He,Victor Torres-Company,Peter A. Andrekson

2024-09-24

Abstract:Four-wave mixing has extensively been investigated for various applications such as communications, spectroscopy, metrology, quantum computing and bio-imaging. However, there is a clear desire to implement these functionalities in a small footprint nonlinear platform, being capable of efficient operation across a large optical bandwidth. Many such integrated platforms have been explored, but suffer from intrinsic significant performance degradation, because conventional approaches of nonlinear photonic waveguide geometry construction for dispersion engineering focus on waveguide cross section and result in always being multimode as a byproduct. Here we propose and demonstrate a methodology that utilizes not only the impact of the waveguide cross section on the modal and dispersion behavior of the waveguide but also includes the impact of the waveguide bend for cutting off high-order modes. This approach results in simultaneous single-mode operation and dispersion engineering for very broadband operation of four-wave mixing. While we implemented this in silicon nitride waveguides, which has emerged as a promising platform capable of continuous-wave optical parametric amplification, the design approach can be universally used with other platforms as well. By also considering both second- and fourth-order dispersion we achieve unprecedented amplification bandwidths of approximately 300 nm in super-low-loss silicon nitride nonlinear waveguides. In addition, penalty-free all-optical wavelength conversion of 100 Gbit/s data in a single optical carrier over 200 nm is realized, for the first time, without optical amplification of signal or idler waves. These single-mode hyper-dispersion-engineered nonlinear integrated waveguides can become practical building blocks in versatile nonlinear photonic devices and optical networks.

Optics
Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Xiaoyan Wang,Xiaowei Guan,Shiming Gao,Hao Hu,Leif K. Oxenlowe,Lars H. Frandsen

DOI: https://doi.org/10.1364/oe.27.023775

IF: 3.8

2019-01-01

Optics Express

Abstract:A silicon/silicon-rich nitride hybrid-core waveguide has been proposed and experimentally demonstrated for nonlinear applications to fill the gap between the pure silicon waveguide and the pure silicon nitride waveguide with respect to the nonlinear properties. The hybrid-core waveguide presented here leverages the advantages of the silicon and the silicon-rich nitride waveguide platforms, showing a large nonlinearity γ of 72 ± 5 W-1 m-1 for energy-efficient four-wave mixing wavelength conversion. At the same time, the drawbacks of the material platforms are dramatically mitigated, exhibiting a reduced two-photon absorption coefficient βTPA of 0.023 cm/GW resulting in an increased nonlinear figure-of-merit as large as 21.6. A four-wave-mixing conversion efficiency as large as -5.3 dB has been achieved with the promise to be larger than 0 dB. These findings are strong arguments supporting the silicon/silicon-rich nitride hybrid-core waveguide to be used for energy-efficient nonlinear photonic applications.
Dispersion Engineering of Suspended Silicon Photonic Waveguides for Broadband Mid-Infrared Wavelength Conversion

Xibin Li,Ping Zhou,Sailing He,Shiming Gao

DOI: https://doi.org/10.1364/josab.31.002295

2014-01-01

Abstract:Silicon photonics has much potential in the mid-infrared (MIR) band due to the broad low-loss window of silicon. The performance of wavelength conversion based on degenerate four-wave mixing is theoretically evaluated in suspended silicon waveguides, which are adopted to eliminate the strong absorption of silica in the MIR region. A theoretical model is formed for MIR wavelength conversion by taking the nonlinear loss into account, where three-photon absorption and related free-carrier absorption play dominant roles. The relationship of the dispersion and the waveguide dimensions is analyzed, and the dispersion is manipulated by tuning the cross section of the waveguide. The phase mismatch is effectively reduced, and a MIR band conversion bandwidth as broad as 706 nm is obtained with a conversion efficiency of −20.5 dB in an 8 mm long suspended silicon waveguide pumped by a light intensity as low as 0.1 GW/cm2.
Compact low loss silicon-on-insulator waveguide for broadband mid-infrared photonics

Bowei Dong,Xianshu Luo,Hong Wang,Chengkuo Lee,Guo-Qiang Lo

DOI: https://doi.org/10.1109/CLEOPR.2017.8118901

2017-01-01

Abstract:Near-infrared nanophotonics has been massively studied due to its promising ability in addressing the interconnect bottleneck problem [1] and achieving resonator-based sensors with high quality factor [2] [3]. Among the various material platforms that have been applied in near infrared nanophotonics, silicon-on-insulator (SOI) platform offers advantages such as high optical mode confinement, low loss, CMOS compatibility, and mature fabrication [4].
Tailoring Of Low Chromatic Dispersion Over A Broadband In Silicon Waveguides Using A Double-Slot Design

Changjing Bao,Yan Yan,Lin Zhang,Yang Yue,Alan E. Willner

DOI: https://doi.org/10.1364/CLEO_AT.2013.JTu4A.53

2013-01-01

Abstract:We propose horizontal double-slot silicon waveguide to tailor the dispersion and achieve flattened and low dispersion with a bandwidth of 878 nm from -17 to 23 ps/(km.nm). Supercontinuum in all-normal dispersion with 3 dB bandwidth of 188 nm is generated in double-slot waveguide.
Soliton-Induced Mid-Infrared Dispersive Wave in Horizontally-Slotted Si3N4 Waveguide

Y. U. X. FANG,C. H. A. N. G. J. I. N. G. BAO,Z. H. WANG,H. A. O. ZHANG,Z. H. O. N. G. Q. PAN,Y. A. N. G. YUE

DOI: https://doi.org/10.1109/ACCESS.2022.3182219

IF: 3.9

2022-01-01

IEEE Access

Abstract:The flexibility of producing two dispersive waves (DWs) in silicon nitride (Si3N4) slot waveguide is demonstrated, by tailoring the slot features and the corresponding phase-matching condition. DWs are generated at visible and mid-infrared (mid-IR) wavelength regions, respectively. We obtain a broadband low normal dispersion region from 2 to 5.25 mu m, which offers particular advantages for DW generation at mid-IR wavelength region. The long-wave dispersive wave (LWDW) can cover beyond 4 mu m. This is the first time to illustrate the freedom of Si3N4 slot waveguide for DWs generation ever reported. A broadband spectrum can be extended from 0.5 to 4.5 mu m at -30 dB level by launching a 1-kW 1550-nm hyperbolic secant input pump pulse to a 1-cm proposed waveguide. The newly formed spectrum has a high degree of coherence. This approach provides more flexibility for frequency conversion, and has the advantages for biophotonics, optical sensing, chip-integrated spectroscopy, health and environmental monitoring.
Development Status of Optical Waveguided Devices for Mid/Long-wave Infrared Region

LI Guoyi,WEI Yuxin,ZHOU Qiang,YANG Jianyi,WANG Minghua,JIANG Xiaoqing

DOI: https://doi.org/10.16818/j.issn1001-5868.2011.01.002

2011-01-01

Abstract:The design principles and applications of optical waveguided devices for mid/long-wave infrared region(LWIR)are illustrated.And the development status and progresses in this field are introduced,based on which,taking 10.6 μm Si-based waveguided components as the example,the methods for obaining low-loss waveguide are presented.
High quality waveguides for the mid-infrared wavelength range in a silicon-on-sapphire platform

Fangxin Li,Stuart D. Jackson,Christian Grillet,Eric Magi,Darren Hudson,Steven J. Madden,Yashodhan Moghe,Christopher OBrien,Andrew Read,Steven G. Duvall,Peter Atanackovic,Benjamin J. Eggleton,David J. Moss

DOI: https://doi.org/10.1364/OE.19.015212

2017-05-29

Abstract:We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8dB/cm at 1550nm, 1.1 to 1.4dB/cm at 2080nm and < 2dB/cm at = 5.18 microns.

Applied Physics,Optics

Ultrabroadband Low Dispersion Silicon-on-Nitride Waveguide in Mid-Infrared Region

Silicon-on-Nitride Waveguide with Ultralow Dispersion over an Octave-Spanning Mid-Infrared Wavelength Range

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Design of Mid-Infrared Nonlinear Silicon–germanium Waveguides for Broadband/discrete-Band Wavelength Conversion

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Achieving Uniform Chromatic Dispersion over a Wide Wavelength Range in Highly Nonlinear Slot Waveguides

Low chromatic dispersion of ±16 ps/(nm·km) over a 550-nm wavelength range using a strip/slot hybrid silicon waveguide

Dispersion Optimization of Silicon Nitride Waveguides for Efficient Four-Wave Mixing

Soliton-induced mid-infrared dispersive wave in horizontally-slotted Si<sub>3</sub>N<sub>4</sub> waveguide

Optical Signal Processing In Silicon Nano-Waveguides

2Μm Mid-Infrared Silicon-Rich Silicon Nitride/silicon Hybrid Nonlinear Waveguides

Single-mode Dispersion-engineered Nonlinear Integrated Waveguides for Ultra-broadband Optical Amplification and Wavelength Conversion

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Dispersion Engineering of Suspended Silicon Photonic Waveguides for Broadband Mid-Infrared Wavelength Conversion

Compact low loss silicon-on-insulator waveguide for broadband mid-infrared photonics

Tailoring Of Low Chromatic Dispersion Over A Broadband In Silicon Waveguides Using A Double-Slot Design

Soliton-Induced Mid-Infrared Dispersive Wave in Horizontally-Slotted Si3N4 Waveguide

Development Status of Optical Waveguided Devices for Mid/Long-wave Infrared Region

High quality waveguides for the mid-infrared wavelength range in a silicon-on-sapphire platform