Abstract:Recently, ion-doped HfO 2 thin films are highly desirable for the next-generation nonvolatile memories due to excellent compatibility with current complementary metal-oxide-semiconductor processes and robust ferroelectricity persisted down to the nanoscale. In this work, we study conduction mechanisms of 4 and 8 nm-thick La:HfO 2 ultrathin films sandwiched between Pt and (La 0.67 ,Sr 0.33 )MnO 3 (LSMO) electrodes based on band alignments of the Pt/La:HfO 2 /LSMO, measured by x-ray photoelectron spectroscopy, and temperature-dependent current-voltage curves from 50 to 300 K. In a 4 nm-thick La:HfO 2 thin-film capacitor, the conduction mechanism is found to be governed by direct tunneling at 50–100 K and phonon-assisted indirect tunneling when the temperature is further increased to 300 K in which the [Formula: see text] acceptors are served as localized states, facilitating hole hopping through the La:HfO 2 barrier. When the thickness is increased to 8 nm, the tunneling through a La:HfO 2 layer is suppressed, and the current-voltage character becomes rectifying, which is regulated by the dominated La:HfO 2 /LSMO interfacial barrier. The transport for a forward bias of the La:HfO 2 /LSMO barrier is found to be governed by thermionic-field emission, exhibiting a temperature-independent build-in potential of ∼2.77 V. For the reverse bias, the Fowler–Nordheim tunneling is observed. The revealing of conduction mechanisms in terms of band alignments sheds light on leakage problems and facilitates the design of HfO 2 -based ferroelectric devices with excellent insulating character for high-performance memory applications.

Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Time Dependent Dielectric Breakdown (TDDB) Characteristics of Metal–oxide–semiconductor Capacitors with HfLaO and HfZrLaO Ultra-Thin Gate Dielectrics

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

On the Current Conduction Mechanisms of Ceo2/La2o3 Stacked Gate Dielectric

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Sub-0.5 nm equivalent oxide thickness scaling for Si-doped Zr1-xHfxO2 thin film without using noble metal electrode

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

Improved Dielectric Properties of La2O3–ZrO2 Bilayer Films for Novel Gate Dielectrics

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Effect of the Chemical Oxide Layer Thickness on the Interfacial Quality of Ald-Grown Hfo2 on Silicon

Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Manipulating Leakage Behavior Via Thickness in Epitaxial BaZr0.35Ti0.65O3 Thin Film Capacitors

Conduction mechanisms of ferroelectric La:HfO 2 ultrathin films

Properties of HfLaO MOS Capacitor Deposited on SOI with Plasma Enhanced Atomic Layer Deposition

Electrical Characteristics and Conduction Mechanisms of Metal-Insulator-Metal Capacitors with Nanolaminated Al(2)O(3)-Hfo(2) Dielectrics