Abnormal Dielectric Properties and Phase Transition in Bi0.783(Mo0.65V0.35)O4 Scheelite-Related Structured Ceramic

Di Zhou,Wen-Bo Li,Li-Xia Pang,Zhen-Xing Yue,Guang-Sheng Pang,Xi Yao

DOI: https://doi.org/10.1039/c4ra15951a

IF: 4.036

2015-01-01

RSC Advances

Abstract:In the present work, an interesting phase transition at 150 °C in ordered scheelite structured Bi0.783(Mo0.65V0.35)O4 ceramic was observed for the first time.

What problem does this paper attempt to address?

Abnormal Dielectric Properties and Phase Transition in Bi₀.₇₈₃(Mo₀.₆₅V₀.₃₅)O₄ Scheelite-Related Structured Ceramic

Di Zhou,Wenbo Li,Li‐Xia Pang,Zhenxing Yue,Guangsheng Pang,Xi Yao

IF: 4.036

2015-01-01

RSC Advances

Abstract:In the present work, an interesting phase transition at 150 °C in ordered scheelite structured Bi₀.₇₈₃(Mo₀.₆₅V₀.₃₅)O₄ ceramic was observed for the first time. This phase transition was believed to be related to the ordered arrangement of A site defects (or A site cations Bi³⁺). X-ray diffraction (XRD) and Raman spectra were employed to study the structure. Thermal expansion data showed that a sudden decrease in cell volume was observed during the phase transition, which resulted in a sharp increase in dielectric permittivity and loss over a wide frequency range (100 Hz to 7.5 GHz). Far-infrared reflectivity and THz spectra were used to study the intrinsic dielectric properties. It was found that the Bi–O stretches contributed mainly to the polarization. This study extended the design of A site ordered scheelite structured materials and the knowledge of their phase transitions.
Phase Evolution, Phase Transition, Raman Spectra, Infrared Spectra, And Microwave Dielectric Properties Of Low Temperature Firing (K0.5xbi1-0.5x)(Moxv1-X)O-4 Ceramics With Scheelite Related Structure

Di Zhou,Li-Xia Pang,Jing Guo,Hongbin Wang,Xi Yao,Clive Randall

DOI: https://doi.org/10.1021/ic201862e

IF: 4.6

2011-01-01

Inorganic Chemistry

Abstract:In the present work, the (K0.5xBi1-0.5x)(MoxV1-x)O-4 ceramics (0 <= x <= 1.00) were prepared via the solid state reaction method and sintered at temperatures below 830 degrees C. At room temperature, the BiVO4 scheelite monoclinic solid solution was formed in ceramic samples with x < 0.10. When x lies between 0.1-0.19, a BiVO4 scheelite tetragonal phase was formed. The phase transition from scheelite monoclinic to scheelite tetragonal phase is a continuous, second order ferroelastic transition. High temperature X-ray diffraction results showed that this phase transition can also be induced at high temperatures about 62 degrees C for x = 0.09 sample, and has a monoclinic phase at room temperature. Two scheelite tetragonal phases, one being a BiVO4 type and the other phase is a (K,B)(1/2)MoO4 type, coexist in the compositional range 0.19 < x < 0.82. A pure (K,Bi)(1/2)MoO4 tetragonal type solid solution can be obtained in the range 0.82 <= x <= 0.85. Between 0.88 <= x <= 1.0, a (K,Bi)(1/2)MoO4 monoclinic solid solution region was observed. Excellent microwave dielectric performance with a relative dielectric permittivity around 78 and Qf value above 7800 GHz were achieved in ceramic samples near the ferroelastic phase boundary (at x = 0.09 and 0.10).
Novel B-site Scheelite Structure Ceramic Bi(Ge0.5Mo0.5)O4 and Its Dielectric Properties

Diming Xu,Haowei Zhang,Lixia Pang,Fayaz Hussain,Tao Zhou,Shi-Kuan Sun,Zhijiao Chen,Di Zhou

DOI: https://doi.org/10.1111/jace.19282

IF: 4.186

2023-01-01

Journal of the American Ceramic Society

Abstract:Scheelite structure phase inorganic oxides show their irreplaceable role in numerous application areas due to their clear structure and superior properties, especially in dielectrics. Scheelite structure phase BiVO4 has been permanently studied but substitutions, modifications, and explorations of novel phases persist hitherto and inspire more interest. In this work, we report a novel Scheelite structure phase of Bi(Ge0.5Mo0.5)O-4 and a detailed study of both structural analysis and dielectric properties investigation. Bi(Ge0.5Mo0.5)O-4 adopts the monoclinic Scheelite structure, identical to BiVO4, with a dielectric permittivity of & SIM; 35, Qf value of & SIM;20 000 GHz, and TCF value of -46 ppm/& DEG;C. No secondary ferroelastic transition was seen in Bi(Ge0.5Mo0.5)O-4 till 600 & DEG;C, close to its synthetical temperature. The results indicate the success of discovering a new Scheelite structure phase and its prior engineering potential in modifying and substituting BiVO4 over the dielectric area, photocatalyst, ion conductor, and so forth.
Phase Transition, Raman Spectra, Infrared Spectra, Band Gap And Microwave Dielectric Properties Of Low Temperature Firing (Na0.5xbi1-0.5x)(Moxv1-X)O-4 Solid Solution Ceramics With Scheelite Structures

Di Zhou,Li-Xia Pang,Hong Wang,Jing Guo,Xi Yao,Clive A. Randall

DOI: https://doi.org/10.1039/c1jm14004c

2011-01-01

Journal of Materials Chemistry

Abstract:A scheelite based structure that could host the solid solution (Na0.5xBi1-0.5x)(MoxV1-x)O-4 (0.0 <= x <= 1.0) was prepared via the solid state reaction method. All the compositions can be sintered well below a temperature of 800 degrees C. A structural phase transition occurs from the monoclinic scheelite structure to a tetragonal scheelite structure at x = 0.10 at room temperature. This structural transition is related to a displacive ferroelastic-paraelastic phase transition. This phase transition was also confirmed by in situ high temperature XRD and Raman studies, and a room temperature infrared spectra study. The compositions near the phase boundary possessed high dielectric permittivities (>70), and large Qf values (>80 000 GHz) with variable temperature coefficients of frequency and capacitance. For example, a temperature stable dielectric made as a composite with compositions of x = 0.05 and x = 0.10 was designed and co-sintered at 720 degrees C for 2 h to produce a dielectric with a permittivity of similar to 77.3, a Qf value between 8 000 GHz-10 000 GHz, and a temperature coefficient of <+/-20 ppm/degrees C at 3.8 GHz over a temperature range of 25-110 degrees C. This material is a candidate for dielectric resonators and low temperature co-fired ceramics technologies. Near the phase boundary at x = 0.10 in the monoclinic phase region, the samples show strong absorption in the visible light region and we determine a band gap energy of about 2.1 eV, which means that it might also be useful as a visible light irradiation photocatalyst.
Morphotropic Phase Boundary, Polymorphic Phases and Enhanced Electrostrain/piezoelectricity in Ag1-xKxNbO3 Solid-Solution Ceramics

Ye Tian,Ye Jia,Xinyi Wang,Lei Li,Jia Geng,Tong Wang,Yonghao Xu,Li Jin,Yizheng Bao,Chen,Leiyang Zhang,Ming Ma,Xiaoyong Wei,Wanyin Ge

DOI: https://doi.org/10.1016/j.jeurceramsoc.2023.03.031

IF: 5.7

2023-01-01

Journal of the European Ceramic Society

Abstract:Ag1_xKxNbO3(AKNx (x <= 0.12) ceramics were prepared to understand the relationship of structure-properties driven by compositions and temperatures. The results suggested that this binary system possessed a morpho-tropic phase boundary (MPB) consisted of ferrielectric and ferroelectric phases with iso-symmetry at room temperature, in which domains switching together with electric-field-induced irreversible phase transition achieved a much higher electrostrain (Smax= 0.4%) than other compositions. But this MPB was destroyed after poling, leading to inferior piezoelectricity. A phase diagram was drawn after analyzing in situ XRD and dielectric data, where an almost vertical ferrielectric/antiferroelectric <-> polymorphic ferroelectric MPB line starting from a triple point was proposed. As temperature increased, the piezoelectricity significant enhanced near ferroelectric orthorhombic <-> monoclinic phase boundary, while the highest piezoelectricity was achieved near the mono-clinic <-> paraelectric phase boundary with d33 = 200 pC/N. The enhanced piezoelectricity is intimately related to the ferroelectric monoclinic possessing Pm symmetry.
Ferroelastic Phase Transition Compositional Dependence for Solid-Solution [(li0.5bi0.5)xbi1−x][moxv1−x]o4 Scheelite-Structured Microwave Dielectric Ceramics

D. Zhou,W. G. Qu,C. A. Randall,L. X. Pang,H. Wang,X. G. Wu,J. Guo,G. Q. Zhang,L. Shui,Q. P. Wang,H. C. Liu,X. Yao

DOI: https://doi.org/10.1016/j.actamat.2010.11.014

IF: 9.4

2010-01-01

Acta Materialia

Abstract:A compositional dependence on the ferroelastic phase transition in scheelite solid-solution [(Li0.5Bi0.5)xBi1−x][MoxV1−x]O4 ceramics was characterized by the microwave dielectric data over the temperature range 10–420K. As x values increased from 0.0 to 0.125, a dielectric temperature-dependent anomaly consistent with a phase transition decreased linearly from 528K for the pure BiVO4 end member to 264K for the solid-solution composition at x=0.125. With further increasing x, the transition temperature decreased sharply to approximately 45K and became stable for x⩾0.52. The phase transition point for pure tetragonal (Li0.5Bi0.5)MoO4 ceramics is approximately 43K. As the x value increases, the Raman band of the [(Li0.5Bi0.5)xBi1−x][MoxV1−x]O4 ceramics at room temperature broadens and overlaps. Ferroelastic domain structures were observed as a function of composition with diffraction contrast imaging and high-resolution imaging with transmission electron microscopy. Structure–property relations are inferred from the microscopy observations and the Raman spectra.
Phase evolution and microwave dielectric properties of xBi(2/3)MoO₄-(1 -x)BiVO₄ (0.0 ≤ x ≤ 1.0) low temperature firing ceramics.

Di Zhou,Wen-Bo Li,Li-Xia Pang,Jing Guo,Ze-Ming Qi,Tao Shao,Xi Yao,Clive A Randall

DOI: https://doi.org/10.1039/c3dt53447b

IF: 4

2014-01-01

Dalton Transactions

Abstract:In the present work, a full range of compositions of xBi(2/3)MoO(4)-( 1 -x) BiVO4 (0.0 <= x <= 1.0) was prepared by the solid state reaction method. All the ceramic compositions could be readily densified to below 850 degrees C. As the x value increased, the monoclinic scheelite structure continuously changed to a tetragonal structure at x = 0.10, which means the ferroelastic phase transition temperature was lowered to near room temperature. In the compositional range 0.50 <= x < 0.70, a novel ordered scheelite phase was formed, most likely through A-site vacancy ordering. For compositions x >= 0.70, a composite two-phase region consisting of the ordered scheelite and Bi-2/3MoO4 phases was formed. High microwave permittivity around 75 and Qf values around 8000 GHz could be obtained in the compositions near the phase boundaries between monoclinic and tetragonal scheelite phases. The intrinsic microwave dielectric properties were extrapolated from the far infrared reflectivity spectra, and it was found that the polarization was dominated by the Bi-O stretches when x <= 0.10.
Microwave dielectric properties of scheelite structured low temperature fired Bi(In1/3Mo2/3)O4 ceramic

Lixia Pang,Di Zhou,Jing Guo,Zeming Qi,Tao Shao

DOI: https://doi.org/10.1016/j.ceramint.2012.11.021

IF: 5.532

2013-01-01

Ceramics International

Abstract:A Bi(In(1/M)vvO(2/3))04 ceramic was prepared via the solid state reaction method. The pure monoclinic phase was formed at around 650 C. Ceramic samples with relative densities above 97% were obtained when sintering temperature was around 840 C. The best microwave dielectric properties were achieved in the Bi(1n113Mo213)04 ceramic sintered at 840 C for 2 h with permittivity similar to 25.2, Qf of 40,000 GHz and temperature coefficient of resonance frequency 65 ppm/ C at 8.2 GHz. The temperature dependence of microwave dielectric properties was also studied in a wide temperature range from 250 degrees C to degrees+120 C. The Qf value increased with the decrease of temperature and reached a maximum of 150,000 GHz at 250 C. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
Crystal Structure And Microwave Dielectric Behaviors Of Ultra-Low-Temperature Fired X(Ag0.5bi0.5)Moo4-(1-X)Bivo4 (0.0 <= X <= 1.0) Solid Solution With Scheelite Structure

Di Zhou,Li-Xia Pang,Ze-Ming Qi

DOI: https://doi.org/10.1021/ic501306n

IF: 4.6

2014-01-01

Inorganic Chemistry

Abstract:x(Ag0.5Bi0.5)MoO4-(1 - x)BiVO4 (0.0 <= x <= 1.0) ceramics were prepared by using the solid-state reaction technique. Ceramics with x < 0.10 had a monoclinic scheelite structure, while those with >= 0.10 were tetragonal scheelite solid solutions. This indicates that the phase transformation temperature of BiVO4 was lowered through the formation of a solid solution. The thermal expansion data of the x = 0.08 sample showed that the thermal expansion coefficient was increased suddenly from +8 to +15 ppm/ degrees C at about 60.6 degrees C due to the phase transition. Similarly, a maximum value of microwave dielectric permittivity was revealed at about 65 degrees C for the x = 0.08 sample. All of the ceramics could be well sintered below 700 degrees C. Good microwave dielectric behaviors, with relative permittivity > 75 and Q(f) > 9000 GHz, were obtained in ceramics with compositions near x = 0.10. Both the THz data and the infrared spectra were used to study the intrinsic dielectric behavior of the materials at microwave frequencies.
Crystal structure, impedance and broadband dielectric spectra of ordered scheelite-structured Bi(Sc1/3Mo2/3)O4 ceramic

Di Zhou,Li-Xia Pang,Dawei Wang,Huan-Huan Guo,Fan Yang,Zeming Qi,Chun Li,Biao-Bing Jin,Ian M. Reaney

DOI: https://doi.org/10.1016/j.jeurceramsoc.2017.12.044

IF: 5.7

2018-01-01

Journal of the European Ceramic Society

Abstract:Bi(Sc1/3Mo2/3)O4 ceramics were prepared via solid state reaction method. It crystallized with an ordered scheelite-related structure (a = 16.9821(9) Å, b = 11.6097(3) Å, c = 5.3099(3) Å and β = 104.649(2)°) with a space group C12/C1, in which Bi3+, Sc3+ and Mo6+ are −8, −6 and −4 coordinated, respectively. Bi(Sc1/3Mo2/3)O4 ceramics were densifiedat 915 °C, giving a permittivity (εr) ∼24.4, quality factor (Qf, Q = 1/dielectric loss, f = resonant frequency) ∼48, 100 GHz and temperature coefficient of resonant frequency (TCF) ∼ −68 ppm/°C. Impedance spectroscopy revealed that there was only a bulk response for conductivity with activation energy (Ea) ∼0.97 eV, suggesting the compound is electrically and chemically homogeneous. Wide band dielectric spectra were employed to study the dielectric response of Bi(Sc1/3Mo2/3)O4 from 20 Hz to 30 THz. εr was stable from 20 Hz to the GHz region, in which only ionic and electron displacive polarization contributed to the εr.
Crystal Structure and Microwave Dielectric Behaviors of Scheelite Structured (1-X)bivo4-xla2/3moo4 (0.0 ≤ X ≤ 1.0) Ceramics with Ultra-Low Sintering Temperature

Li-Xia Pang,Di Zhou,Wei-Guo Liu,Ze-Ming Qi,Zhen-Xing Yue

DOI: https://doi.org/10.1016/j.jeurceramsoc.2017.10.051

IF: 5.7

2017-01-01

Journal of the European Ceramic Society

Abstract:In the present work, a novel (1-x)BiVO4-xLa2/3MoO4 scheelite related solid solution ceramics were prepared via solid state reaction method. As revealed by X-ray diffraction data, the crystal structure changed continuously from monoclinic to tetragonal phase at x=0.10 and then the tetragonal solid solution was kept in a wide composition range up to x=0.70. Both the Raman and far infrared spectra supported this phenomenon. When x value reached 0.9, the ceramic sample was found to composed of both scheelite tetragonal and monoclinic La2/3MoO4 phases. Large microwave permittivity value between 68±0.2–73±0.3 can be achieved in compositions with 0.02≤x≤0.10 with high Qf value about 10,000±500GHz. This series of solid solution ceramics might be candidate for both dielectric resonator and low temperature co-fired ceramic technology.
Structure, Phase Evolution, And Microwave Dielectric Properties Of (Ag0.5bi0.5)(Mo0.5w0.5)O-4 Ceramic With Ultra Low Sintering Temperature

Di Zhou,Wen-Bo Li,Jing Guo,Li-Xia Pang,Ze-Ming Qi,Tao Shao,Hui-Dong Xie,Zhen-Xing Yue,Xi Yao

DOI: https://doi.org/10.1021/ic5004808

IF: 4.6

2014-01-01

Inorganic Chemistry

Abstract:In the present work, the microwave dielectric ceramic (Ag0.5Bi0.5)(Mn0.5W0.5)O-4 was prepared by using the solid-state reaction method. (Ag0.5Bi0.5)(Mn0.5W0.5)O-4 was found to crystallize in the scheelite structure, in which Ag+ and Bi3+ occupy the A site randomly with 8-coordination while Mo6+ and W6+ occupy the B site with 4-coordination, at a sintering temperature above 500 degrees C, with lattice parameters a = b = 5.29469(2) angstrom and c = 11.62114(0) angstrom, space group I4(1)/a (No. 88), and acceptable R-p = 9.38, R-wp = 11.2, and R-exp = 5.86. High-performance microwave dielectric properties, with permittivity similar to 26.3, Q(f) value similar to 10000 GHz, and temperature coefficient similar to+20 ppm/degrees C, were obtained in the sample sintered at 580 degrees C. Its chemical compatibility with aluminum at its sintering temperature was revealed and confirmed by both X-ray and energy dispersive spectrometer analysis This ceramic could be a good candidate for ultralow-temperature cofired ceramics.
Phase evolution, phase transition, and microwave dielectric properties of scheelite structured xBi(Fe 1/3Mo 2/3)O 4-(1-x) BiVO 4 (0.0 ≤ x ≤ 1.0) low temperature firing ceramics

Di Zhou,Lixia Pang,Jing Guo,Zeming Qi,Tao Shao,Xi Yao,Clive A. Randall

DOI: https://doi.org/10.1039/c2jm34603f

2012-01-01

Journal of Materials Chemistry

Abstract:In the present work, the xBi(Fe1/3Mo2/3)O-4-(1-x)BiVO4 (0.0 <= x <= 1.0) ceramics were prepared via the solid state reaction method. All the ceramics can be densified at low sintering temperatures around 820 degrees C. At room temperature, the BiVO4 type scheelite monoclinic solid solution was formed in ceramic samples with a composition of x <= 0.10. When x lies between 0.1 and 0.7, a BiVO4 scheelite tetragonal phase is formed at room temperature. In the range 0.7 <= x < 0.9, the ceramic samples were found to be composites consisting of BiVO4 type tetragonal and Bi(Fe1/3Mo2/3)O-4 type monoclinic scheelite phases, and when x >= 0.9, the Bi(Fe1/3Mo2/3)O-4 type monoclinic scheelite solid solution was formed. In the BiVO4 type monoclinic solid solution region, the phase transition to tetragonal phase was studied by in situ Raman and Far-Infrared spectroscopies and by thermal expansion analysis. All of these methods indicated that the phase transition temperature almost linearly decreased from 255 degrees C for pure BiVO4 to about -9 degrees C for x = 0.1 sample. High performance microwave dielectric properties with a high permittivity of about 74.8, high Qf values above 11 500 GHz, and a small temperature coefficient of resonant frequency within +20 ppm per degrees C in a wide temperature range of 20-140 degrees C can be obtained in the composite ceramic sample with 60 mol% x = 0.10 composition and 40 mol% x = 0.02 composition. The xBi(Fe1/3Mo2/3)O-4-(1-x)BiVO4 (0.0 <= x <= 1.0) ceramics might provide useful candidate materials for microwave integrated capacitive devices, such as filters, antennas, etc.
Structural Evolution, Electrical Properties and Electric-Field-induced Changes of (0.8− X )pbtio 3 – X BiFeO 3 –0.2bazro 3 System Near the Morphotropic Phase Boundary

Yongxing Wei,Changqing Jin,Pin Ye,Peng Li,Yiming Zeng,Gang Xu

DOI: https://doi.org/10.1007/s00339-016-0736-x

2017-01-01

Applied Physics A

Abstract:The crystal structures, piezoelectric property, dielectric transition and electric-field-induced changes in the structures and dielectric constant of (0.8−x)PbTiO3–xBiFeO3–0.2BaZrO3 (0.3 ≤ x ≤ 0.4) ceramics near the morphotropic phase boundary have been studied. All the ceramics could be indexed on the base of a tetragonal symmetry. The increasing concentration of BiFeO3 induces a reduction in the c/a ratio, ranged from 1.022 for x = 0.3 to 1.007 for x = 0.4. Accordingly, the piezoelectric coefficient (d33) reaches a maximum value at x = 0.34 (d33, 138 pC/N). A relaxor-type dielectric anomaly could be found for all the ceramics. The temperature of the maximum dielectric constant (T m) at 1 MHz and the degree of the diffuseness for the dielectric anomaly (δ) increase with BiFeO3 concentration, from 544 and 96 K for x = 0.3 to 574 and 154 K for x = 0.4. After poling, the ceramic for x = 0.34 shows an increase in the c/a ratio and an obvious decrease in the dielectric constant.
Phase transitions and microwave dielectric behaviors of the (Bi1‐xLi0.5xY0.5x)(V1‐xMox)O4 ceramics

Li‐Xia Pang,Di Zhou,Xiao‐Gang Yao,Hui‐Xing Lin,Chen Chen,Zhong‐Qi Shi,Fayaz Hussain,Moustafa Adel Darwish,Tao Zhou,Shi‐Kuan Sun,Qi‐Xin Liang,Ya‐Wei Chen

DOI: https://doi.org/10.1111/jace.18998

IF: 4.186

2023-01-24

Journal of the American Ceramic Society

Abstract:Microwave dielectric ceramics with intrinsic low sintering temperatures are potential candidates for low temperature co‐fired ceramics technology (LTCC). In the present work, the (Li0.5Y0.5)MoO4 ceramic with tetragonal scheelite structures was selected to improve microwave dielectric properties of BiVO4 ceramics. As proved by X‐ray diffraction (XRD) results, scheelite structured solid solution ceramics were formed with x value ≤ 0.1 in the (Bi1‐xLi0.5xY0.5x)(V1‐xMox)O4. In‐situ XRD results further confirmed that addition of (Li0.5Y0.5)MoO4 also lowered transition temperature from distorted monoclinic to tetragonal scheelite structure. When x value increased further, zircon phase was detected by XRD. Room and high temperature Raman spectra also supported the XRD results. Differences of thermal expansion coefficients of both monoclinic and tetragonal scheelite phases lead to an abnormality at phase transition temperature. Good microwave dielectric properties with permittivity above 70 and Qf (Q = quality factor = 1/dielectric loss and f = frequency) value above 8,000 GHz were obtained in the (Bi1‐xLi0.5xY0.5x)(V1‐xMox)O4 solid solution ceramics with x value ≤ 0.1 sintered below 800°C. However, permittivity peak values at phase transition temperatures lead to large positive or negative temperature coefficient of resonant frequency (TCF) and this needs to be modified via composite technologies in the future. This article is protected by copyright. All rights reserved

materials science, ceramics
Phase Composition, Crystal Structure, Infrared Reflectivity and Microwave Dielectric Properties of Temperature Stable Composite Ceramics (scheelite and Zircon-Type) in BiVO4–YVO4 System

Di Zhou,Wen-Bo Li,Hai-Hong Xi,Li-Xia Pang,Guang-Sheng Pang

DOI: https://doi.org/10.1039/c4tc02728k

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:(1 − x)BiVO4–xYVO4 (x ≤ 0.65) ceramics were prepared using the solid state reaction method. Bi–O oscillations were proved to dominate the microwave dielectric polarizations.
Microwave dielectric properties and Raman spectroscopy of Scheelite solid solution [(Li0.5Bi0.5)1-xCax] MoO4 ceramics with ultra-low sintering temperatures

Di Zhou,Hongbin Wang,Qiuping Wang,XinGuang Wu,Jing Guo,Gaoqun Zhang,Li Shui,Xi Yao,Clive A. Randall,Lixia Pang,Hanchen Liu

DOI: https://doi.org/10.1142/S1793604710001354

IF: 1.4901

2011-01-01

Functional Materials Letters

Abstract:A Scheelite solid solution was formed based on [(Li0.5Bi0.5)(1-x)Ca-x]MoO4 ceramics and prepared via a solid state reaction method in the range 0.0 <= x <= 1.0. High performance microwave dielectric properties were obtained in the [(Li0.5Bi0.5)(0.15)Ca-0.85]MoO4 ceramic sintered at 760 degrees C with a relative permittivity of 14.1, a Qf value of 24,000GHz (at 10.0GHz), and a temperature coefficient value of +10.7 ppm/degrees C and the [(Li0.5Bi0.5)(0.1)Ca-0.9]MoO4 ceramic sintered at 850 degrees C with a relative permittivity of 12.7, a Qf value of 41,300GHz (at 10.3 GHz), and a temperature coefficient value of -16.5 ppm/degrees C. X-ray diffraction, Raman spectroscopy and the classical damped oscillator model were applied to study the relationship between the microwave dielectric properties and structures.
Ultra‐Low Firing High‐k Scheelite Structures Based on [(li0.5bi0.5)xbi1−x][moxv1−x]o4 Microwave Dielectric Ceramics

Di Zhou,Clive A. Randall,Hong Wang,Li-Xia Pang,Xi Yao

DOI: https://doi.org/10.1111/j.1551-2916.2010.03689.x

IF: 4.186

2010-01-01

Journal of the American Ceramic Society

Abstract:In this work, dense ceramic samples across the solid solution of the [(Li0.5Bi0.5)xBi1−x][MoxV1−x]O4 system are prepared using the solid‐state reaction process. The monoclinic phase region could be obtained for 0≤x<0.098 and the scheelite tetragonal solid solution region could be obtained for 0.098<x≤1. When x=0.098, the boundary composition [(Li0.5Bi0.5)0.098Bi0.902][Mo0.098V0.902]O4 could be readily sintered at 650°C and also have excellent microwave properties with a high relative permittivity of 81, and a Q×f value of 8000 GHz and a low temperature coefficient of +9.7 ppm/°C. This ceramic is chemically compatible with both Al and Cu electrode materials at its sintering temperature. It can be an excellent candidate for ultra‐low‐temperature co‐fired ceramic technology and is the highest permittivity microwave material found to date with sintering considerations as low as 650°C.
Microwave Dielectric Properties of Low Firing Scheelite-Related (na0.5la0.5)moo4 Ceramic

Haihong Xi,Di Zhou,Huidong Xie,Wenbo Li

DOI: https://doi.org/10.1016/j.matlet.2014.12.020

IF: 3

2015-01-01

Materials Letters

Abstract:In this paper, the (Na0.5La0.5)MoO4 ceramic with a scheelite structure was prepared via a solid state reaction method and its microwave dielectric properties were reported for the first time. The (Na0.5La0.5)MoO4 ceramic sintered at 740°C for 2h possessed a low dielectric permittivity of 11.0, a quality factor (Qf value) of 25,050GHz and a temperature coefficient of −59ppm/oC at 8.83GHz. The (Na0.5La0.5)MoO4 ceramic is chemically compatible with Ag electrode material at its sintering temperature. It can be a promising microwave dielectric material for low-temperature co-fired ceramics technology (LTCC).
Temperature independent low firing [Ca0.25(Nd1-xBix)0.5]MoO4 (0.2 ≤ x ≤ 0.8) microwave dielectric ceramics

Li-Xia Pang,Di Zhou,Zhen-Xing Yue

DOI: https://doi.org/10.1016/j.jallcom.2018.12.125

IF: 6.2

2019-01-01

Journal of Alloys and Compounds

Abstract:A scheelite structured [Ca0.25(Nd1-xBix)0.5]MoO4 (0.2 ≤ x ≤ 0.8) ceramics were prepared via solid state reaction method. All the ceramics can be well densified below 780 °C. As x value increased from 0.2 to 0.8, microwave dielectric permittivity increased from 14.0 to 27.8, Qf (Q = quality factor = 1/dielectric loss; f = resonant frequency) value decreased from 42,000 GHz to 19,000 GHz, and TCF shifted from −50 ppm/oC to +18 ppm/oC. The best microwave dielectric properties with permittivity between 23.54 and 23.56, Qf value between 24,000 GHz–21,000 GHz and TCF value ∼ −8 ppm/oC in wide temperature range 25 °C–130 °C were obtained in x = 0.6 ceramic. This work showed that Bi played an important role to modify the TCF from negative to positive value in scheelite materials and this result further accelerate the application of scheelite materials in low temperature co-fired ceramics (LTCC) technology.

Abnormal Dielectric Properties and Phase Transition in Bi0.783(Mo0.65V0.35)O4 Scheelite-Related Structured Ceramic

Abnormal Dielectric Properties and Phase Transition in Bi₀.₇₈₃(Mo₀.₆₅V₀.₃₅)O₄ Scheelite-Related Structured Ceramic

Phase Evolution, Phase Transition, Raman Spectra, Infrared Spectra, And Microwave Dielectric Properties Of Low Temperature Firing (K0.5xbi1-0.5x)(Moxv1-X)O-4 Ceramics With Scheelite Related Structure

Novel B-site Scheelite Structure Ceramic Bi(Ge0.5Mo0.5)O4 and Its Dielectric Properties

Phase Transition, Raman Spectra, Infrared Spectra, Band Gap And Microwave Dielectric Properties Of Low Temperature Firing (Na0.5xbi1-0.5x)(Moxv1-X)O-4 Solid Solution Ceramics With Scheelite Structures

Morphotropic Phase Boundary, Polymorphic Phases and Enhanced Electrostrain/piezoelectricity in Ag1-xKxNbO3 Solid-Solution Ceramics

Ferroelastic Phase Transition Compositional Dependence for Solid-Solution [(li0.5bi0.5)xbi1−x][moxv1−x]o4 Scheelite-Structured Microwave Dielectric Ceramics

Phase evolution and microwave dielectric properties of xBi(2/3)MoO₄-(1 -x)BiVO₄ (0.0 ≤ x ≤ 1.0) low temperature firing ceramics.

Microwave dielectric properties of scheelite structured low temperature fired Bi(In1/3Mo2/3)O4 ceramic

Crystal Structure And Microwave Dielectric Behaviors Of Ultra-Low-Temperature Fired X(Ag0.5bi0.5)Moo4-(1-X)Bivo4 (0.0 <= X <= 1.0) Solid Solution With Scheelite Structure

Crystal structure, impedance and broadband dielectric spectra of ordered scheelite-structured Bi(Sc1/3Mo2/3)O4 ceramic

Crystal Structure and Microwave Dielectric Behaviors of Scheelite Structured (1-X)bivo4-xla2/3moo4 (0.0 ≤ X ≤ 1.0) Ceramics with Ultra-Low Sintering Temperature

Structure, Phase Evolution, And Microwave Dielectric Properties Of (Ag0.5bi0.5)(Mo0.5w0.5)O-4 Ceramic With Ultra Low Sintering Temperature

Phase evolution, phase transition, and microwave dielectric properties of scheelite structured xBi(Fe 1/3Mo 2/3)O 4-(1-x) BiVO 4 (0.0 ≤ x ≤ 1.0) low temperature firing ceramics

Structural Evolution, Electrical Properties and Electric-Field-induced Changes of (0.8− X )pbtio 3 – X BiFeO 3 –0.2bazro 3 System Near the Morphotropic Phase Boundary

Phase transitions and microwave dielectric behaviors of the (Bi1‐xLi0.5xY0.5x)(V1‐xMox)O4 ceramics

Phase Composition, Crystal Structure, Infrared Reflectivity and Microwave Dielectric Properties of Temperature Stable Composite Ceramics (scheelite and Zircon-Type) in BiVO4–YVO4 System

Microwave dielectric properties and Raman spectroscopy of Scheelite solid solution [(Li0.5Bi0.5)1-xCax] MoO4 ceramics with ultra-low sintering temperatures

Ultra‐Low Firing High‐k Scheelite Structures Based on [(li0.5bi0.5)xbi1−x][moxv1−x]o4 Microwave Dielectric Ceramics

Microwave Dielectric Properties of Low Firing Scheelite-Related (na0.5la0.5)moo4 Ceramic

Temperature independent low firing [Ca0.25(Nd1-xBix)0.5]MoO4 (0.2 ≤ x ≤ 0.8) microwave dielectric ceramics