Abstract:MoS2 and related transition metal dichalcogenides (TMDs) have recently been reported to exhibit extensive applications in nanoelectronics and catalysis due to their unique physical and chemical properties. However, one practical challenge for the MoS2-based applications arises from easiness of oxygen contamination which is likely to degrade performance. To this end, understanding states and related energetics of adsorbed oxygen is critical. Herein, we identify various states of oxygen species adsorbed on MoS2 surface with first-principles calculations. We reveal a "dissociative" mechanism through which a physisorbed oxygen molecule trapped at a sulfur vacancy can split into two chemically bound oxygen atoms, namely a top-anchoring oxygen and a substituting oxygen both of which show no adsorbate induced states in bandgap. The electron and hole mass show an asymmetric effect in response of oxygen species with the hole mass being more sensitive to oxygen content due to a strong hybridization of oxygen states in valence band edge of MoS2. Alternation of oxygen content allows modulation of work function up to 0.5 eV, enabling reduced Schottky barriers in MoS2/metal contact. These results show that oxygen doping on MoS2 is a promising method for sulfur vacancy healing, carrier mass controlling, contact resistance reduction, and anchoring of surface electron dopants. Our study suggests that tuning the chemical composition of oxygen is viable for modulating the electronic properties of MoS2 and likely other chalcogen incorporated-TMDs, which offers promise for new optoelectronic applications.

Tuning the Electronic Properties of Bondings in Monolayer MoS2 Through (au, O) Co-Doping

Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

Co Doped MoS2 As Bifunctional Electrocatalyst for Hydrogen Evolution and Oxygen Reduction Reactions

Synthesis And Electrochemical Properties Of Co Doped Mno2 Framework With Nanofibrous Structure

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

Identification of Co-O-Mo Active Centers on Co-Doped MoS2 Electrocatalyst

Identification of Co–O–Mo Active Centers on Co-Doped MoS<sub>2</sub> Electrocatalyst

How Doped MoS2 Breaks Transition-Metal Scaling Relations for CO2 Electrochemical Reduction

Role of Vacancies in Tuning the Electronic Properties of Au-MoS2 Contact

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Tuning Electronic and Optical Properties of Monolayer MoS2 by Transition Metal and Nitrogen Co-Doping

Periodic Modulation of the Doping Level in Striped Mos2 Superstructures

Substitutional Doping: In Situ Oxygen Doping of Monolayer MoS 2 for Novel Electronics (Small 42/2020)

Wafer-Scale Oxygen-Doped MoS2 Monolayer.

Tuning the Interfacial Electronic Structure of MoS2 by Adsorption of Cobalt Phthalocyanine Derivatives

Unraveling States, Energetics, and Kinetics of Adsorbing Oxygen Species above MoS2

Investigation of Sulfur Doping in Mn-Co Oxide Nanotubes on Surface-Enhanced Raman Scattering Properties

Tuning the Interfacial Electronic Structure of MoS 2 by Adsorption of Cobalt Phthalocyanine Derivatives

Wafer‐Scale Oxygen‐Doped MoS 2 Monolayer

MoO3 with the Synergistic Effect of Sulfur Doping and Oxygen Vacancies: The Influence of S Doping on the Structure, Morphology, and Optoelectronic Properties