Abstract:OVERVIEW A relatively new electrical mode, scanning microwave impedance microscopy (sMIM), measures a material’s change in permittivity and conductivity at the scale of tens of nanometers.[1] The use of atomic force microscopy (AFM) electrical measurement modes is a critical tool for the study of semiconductor devices and process development. More specifically, the application of AFM electrical modes is an important tool for characterizing semiconductor devices during process development and failure analysis. The AFM-based electrical measurement techniques, such as scanning capacitance microscopy (SCM) and scanning spreading-resistance microscopy,[2,3] have shown value for dopant profiling in semiconductor samples with sub-50 nm spatial resolution. However, there has been no single scanning probe technique capable of quantifying at submicron dimensions the local electrical properties of materials (dielectric constant and conductivity) with the sensitivity and dynamic range required by the semiconductor industry and research communities. Scanning microwave impedance microscopy provides the capability to directly probe a sample’s permittivity and conductivity at submicron geometries. Scanning microwave impedance microscopy provides the real and imaginary impedance (Re(Z) and Im(Z), respectively) of the probe-sample interface impedance. By measuring the reflected microwave signal as a sample of interest imaged with an AFM, one can capture in parallel the variations in permittivity and conductivity and, for EDFAAO (2017) 4:12-2

Recent Advances in Scanning Microwave Impedance Microscopy (smim) for Nano-Scale Measurements and Industrial Applications

Scanning Microwave Impedance Microscopy (smim) for Materials Characterization and Metrology

Scanning Microwave Impedance Microscopy (sMIM) in Electronic and Quantum Materials

Advances in Scanning Microwave Impedance Microscopy

USING SCANNING MICROWAVE IMPEDANCE MICROSCOPY ( sMIM )

Practical Quantitative Scanning Microwave Impedance Microscopy

Probing Biosensing Interfaces with Single Molecule Localization Microscopy (SMLM)

Nanoscale Scanning Microwave Impedance Microscopy on Advanced Functional Materials

Characterizing Non-Linear Microwave Behavior of Semiconductor Materials with Scanning Microwave Impedance Microscopy

Nanoscale Capacitance and Capacitance-Voltage Curves for Advanced Characterization of Electrical Properties of Si and GaN Structures Using Scanning Microwave Impedance Microscopy

Nano C-V Imaging of Semiconductor Devices with Scanning Microwave Impedance Microscopy

Microwave Atomic Force Microscopy Imaging for Nanometer-Scale Electrical Property Characterization.

Noninvasive Conductivity Imaging of 2d Materials and Devices by Microwave Impedance Microscopy

Scanning Microwave Impedance Microscopy: Room-Temperature and Low-Temperature Applications for Device and Material Characterization

Quantitative Measurements of Nanoscale Permittivity and Conductivity Using Tuning-Fork-based Microwave Impedance Microscopy.

Microwave Atomic Force Microscopy: Quantitative Measurement and Characterization of Electrical Properties on the Nanometer Scale

Quantitative Evaluation of Local Permittivity of Semiconductor Nanomaterials Using Microwave Atomic Force Microscopy

Johnson-noise-limited cancellation-free microwave impedance microscopy with monolithic silicon cantilever probes

Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Influence of Material Surface on the Measurement of Local Electrical Conductivity Using Microwave Atomic Force Microscopy

Multi Scan Mode Atomic Force Microscope with Improved Properties and High Applicability