Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Stacking Fault and Unoccupied Densities of State Dependence of Electromagnetic Wave Absorption in Sic Nanowires

Thermal Conductivity of Si Nanowires with Faulted Stacking Layers

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Electromagnetic wave absorption property of SiC whiskers regulated by stacking faults and SiC@SiO 2 core-sheath microstructure

Cobalt Doping-Induced Strong Electromagnetic Wave Absorption in SiC Nanowires

Ab Initio Molecular Dynamics Simulation of the Effects of Stacking Faults on the Radiation Response of 3C-Sic

Unveiling Phonon Frequency-Dependent Mechanism of Heat Transport Across Stacking Fault in Silicon Carbide

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Unstable stacking faults in submicron/micron Al grammins in multi-SiCp/multi-Al nanocomposite

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Synthesis and Wave Absorption Characterization of Sic Nanowires/Expanded Graphite Composites

Strengthening Brittle Semiconductor Nanowires Through Stacking Faults: Insights from in Situ Mechanical Testing.

Ultraviolet-visible light photoluminescence induced by stacking faults in 3C-SiC nanowires.

In Situ Growth of Core-Sheath Heterostructural SiC Nanowire Arrays on Carbon Fibers and Enhanced Electromagnetic Wave Absorption Performance.

Covalent Interaction Enhanced Electromagnetic Wave Absorption in SiC/Co Hybrid Nanowires

Electromagnetic Wave Absorption Properties of Sic Coated Cnts Nano-Composites

Formation of stacking faults and the screw dislocation-driven growth: a case study of aluminum nitride nanowires.

Nano-twins and Stacking Faults Induced by Picosecond Laser Dicing with Low Fluence Strengthening Monocrystalline Silicon

Controllable Fabricating Dielectric-Dielectric SiC@C Core-Shell Nanowires for High-Performance Electromagnetic Wave Attenuation.

Electron-Beam-Induced Current Study Of Stacking Faults And Partial Dislocations In 4h-Sic Schottky Diode

Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC