Nano-twins and Stacking Faults Induced by Picosecond Laser Dicing with Low Fluence Strengthening Monocrystalline Silicon

Yiqin Huang,Liang Cao,Wenlong Zhang,Tao Hang,Ming Li,Yunwen Wu
DOI: https://doi.org/10.1016/j.matlet.2022.133719
IF: 3
2023-01-01
Materials Letters
Abstract:Laser dicing of ultra-thin wafers has attracted more attention with the growing demand for ultra-thin dies in highly integrated packages. 25 mu m thickness dies were prepared by picosecond laser dicing with different flu-ences and the enhancement effect at low fluence was investigated. The sidewall near the frontside was divided into three zones: (1) the resolidified layer/particles; (2) heat affected zone (HAZ) composed of monocrystalline silicon with the diamond structure (Si-I) under stress; (3) pristine silicon. At higher fluence, there were only edge dislocations in HAZ. More crystallographic defects especially numerous stacking faults and nano-twins were introduced into the HAZ's edge at low fluence to inhibit the motion of dislocations and thus strengthen silicon substrate effectively, which gained new insights into HAZ.
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