Room-temperature Ferromagnetism, Half-metallicity and Spin Transport in Monolayer CrSc2Te4-Based Magnetic Tunnel Junction Devices
Ruixue Yue,Xuemin Su,Xiaodong Lv,Bingwen Zhang,Shaolong Su,Haipeng Li,Shaoqiang Guo,Jian Gong
DOI: https://doi.org/10.1039/d4cp01660b
IF: 3.3
2024-06-21
Physical Chemistry Chemical Physics
Abstract:The discovery of novel two-dimensional (2D) half-metallic materials with robust ferromagnetic (FM) order and high Curie temperature (Tc) is attractive for the advancement of next-generation spintronic devices. Here, we proposed a stable 2D intrinsic FM half-metallicity, i.e., CrSc2Te4 monolayer, which was constructed by intercalating a monolayer of 1T-CrTe2-type sandwiched between two layers of 2H-ScTe2 monolayers. Our calculations reveal that it exhibits exceptional dynamical, thermal, and mechanical stability accompanied by a robust half-metallicity characterized by a wide bandgap of 1.02 eV and FM ordering with a high Tc of 326 K. Notably, these properties remain intact in almost the entire range of biaxial strain from -5% to 5%. Furthermore, our investigations demonstrate excellent spin transport capabilities, including an outstanding spin-filtering effect, and a remarkably high tunneling magnetoresistance ratio peaking at 6087.07%. The remarkable magnetic features of 2D CrSc2Te4 monolayer with root temperature FM, intrinsic half-metallicity, and 100% spin-polarization render it a promising candidate for the next-generation high-performance spintronic nanodevices as well as high-density magnetic recording and sensors.
chemistry, physical,physics, atomic, molecular & chemical