Interface exchange coupling induced fourfold symmetry planar Hall effect in Fe 3 O 4 /NiO bilayers

ping li,w y cui,h l bai

DOI: https://doi.org/10.1016/j.ssc.2015.06.025

IF: 1.934

2015-01-01

Solid State Communications

Abstract:An unexpected fourfold symmetry planar Hall effect was observed in Fe3O4/NiO bilayers. As the thickness of the antiferromagnetic layer exceeds 37nm, the planar Hall effect of the bilayer further shifts to twofold symmetry, which is ascribed to the dying interfacial coupled effect with increasing antiferromagnetic NiO layer thickness. According to the fitting based on the Stoner–Wohlfarth model, it was notable that an extra cubic anisotropic field in the bilayer structure was obviously amplified by attenuating the thickness of the antiferromagnetic layer. First principle calculations reveal that the amplified cubic anisotropic field was ascribed to the synergistic effect from interfacial bonding structure and charge transfer.