Te-Induced Modulation Of The Mo/Hfo2 Interface Effective Work Function

Ka Xiong,Pietro Delugas,Jacob C. Hooker,Vincenzo Fiorentini,John Robertson,Dameng Liu,Geoffrey Pourtois

DOI: https://doi.org/10.1063/1.2870078

IF: 4

2008-01-01

Applied Physics Letters

Abstract:First principles calculations of the impact of Te local doping on the effective work function of a Mo/HfO2 interface are presented. The undoped interface has a p-type effective work function. We find that interstitial Te and Te in the metal both make the effective work function more p-type. More importantly, Te substituting for O or Hf in the dielectric near the interface-energetically stable for all growth conditions-decreases the effective work function, making it more n-type. (c) 2008 American Institute of Physics.