Morphology of Epitaxial Tin(001) Grown by Magnetron Sputtering

BW Karr,I Petrov,DG Cahill,JE Greene

DOI: https://doi.org/10.1063/1.118675

1997-01-01

Abstract:The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650

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In Situ Scanning Tunneling Microscopy Studies of the Evolution of Surface Morphology and Microstructure in Epitaxial TiN(001) Grown by Ultra-High-vacuum Reactive Magnetron Sputtering

Brian W. Karr,I. Petrov,P. Desjardins,David G. Cahill,J. E. Greene

DOI: https://doi.org/10.1016/s0257-8972(97)00444-1

1997-01-01

Abstract:The group IV-B transition metal nitride TiN is widely employed as a wear-resistant coating on mechanical components and as a diffusion barrier in microelectronic devices. We use the epitaxial growth of TiN as a model system for insight on the evolution of surface morphology and microstructure in more complex polycrystalline films. Atomically-flat MgO(001) substrates, prepared by air annealing at 950 °C for 12 h, are verified by atomic force microscopy (AFM). Epitaxial TiN layers are grown by reactive magnetron sputter deposition in pure N2 at 650 -Ts ≤750 °C. Scanning tunneling microscopy (STM) results show that the development of surface morphology is dominated by growth mounds with an aspect-ratio of ≈ 0.006; both the roughness amplitude and average separation between mounds follow an approximate power law dependence on film thickness, tγ, with γ = 0.25 ±0.07. The films grow in a two-dimensional multilayer mode in which island edges exhibit dendritic geometries characteristic of limited step-edge mobility. Transmission electron microscopy (TEM) shows that the films are epitaxial with dislocation loops on 111 planes and 01misfit dislocations at the interface. Low-energy N2+ ion irradiation during film growth leads to surface smoothing with the smoothest layers, having a surface width of ≅0.22 nm, obtained with Vs = 43 V. Increasing Vs ≥43 V leads to surface roughening with decreased in-plane length scales.
Effects of High-Flux Low-Energy Ion Bombardment on the Low-Temperature Growth Morphology of Tin(001) Epitaxial Layers

BW Karr,DG Cahill,I Petrov,JE Greene

DOI: https://doi.org/10.1103/physrevb.61.16137

2000-01-01

Abstract:Ultrahigh vacuum scanning tunneling microscopy (STM) is used to characterize the surface morphology of TiN(001) epitaxial layers grown by de reactive magnetron sputtering at growth temperatures of T-s=650 and T-s=750 degrees C. An auxiliary anode is used to bias the N-2 plasma and produce a large flux of low-energy N-2(+) ions that bombard the Aim surface during growth: the ratio of the N-2(+) flux to the Ti growth flux is approximate to 25. At ion energies E-i near the threshold for the production of bulk defects (E-i=43 eV and T-s=650 degrees C), ion bombardment decreases the amplitude of the roughness, decreases the average distance between growth mounds, and reduces the sharpness of grooves between growth mounds. The critical island radius for second layer nucleation R-c is approximately 12 and 17 nm at growth temperatures of 650 and 750 degrees C respectively; at 650 degrees C, R-c is reduced to approximate to 10 nm by ion bombardment.
Nucleation Kinetics During Homoepitaxial Growth of Tin(001) by Reactive Magnetron Sputtering

MA Wall,DG Cahill,I Petrov,D Gall,JE Greene

DOI: https://doi.org/10.1103/physrevb.70.035413

IF: 3.7

2004-01-01

Physical Review B

Abstract:We use scanning tunneling microscopy to study the nucleation of homoepitaxial TiN layers grown on TiN(001) by ultrahigh vacuum reactive magnetron sputtering in pure N-2. Nucleation lengths are measured using in situ scanning tunneling microscopy as a function of temperature on two-dimensional islands as well as on large open terraces. At low growth temperatures, 500less than or equal toT(s)less than or equal to865 degreesC, nucleation is diffusion limited and we extract a surface diffusion energy of 1.4+/-0.1 eV. At higher temperatures, 865less than or equal toT(s)less than or equal to1010 degreesC, nucleation is limited by the formation rate of stable clusters for which we obtain an activation energy of 2.6+/-0.2 eV. Ab initio calculations combined with our experimental results suggest that the primary diffusing adspecies are TiNx molecules with x=2 and/or 3.
Nucleation Kinetics Versus Nitrogen Partial Pressure During Homoepitaxial Growth of Stoichiometric Tin(001): A Scanning Tunneling Microscopy Study

MA Wall,DG Cahill,I Petrov,D Gall,JE Greene

DOI: https://doi.org/10.1016/j.susc.2005.03.007

IF: 1.9

2005-01-01

Surface Science

Abstract:We grow homoepitaxial stoichiometric TiN(001) layers by ultra-high vacuum reactive magnetron sputtering in Ar/N2 mixtures and use scanning tunneling microscopy to study nucleation as a function of the N2 gas fraction fN2 and growth temperature Ts. The characteristic island size Rc necessary to nucleate a new layer decreases continuously with fN2, varying from 18.0 nm at Ts=740 °C with fN2=0.10 to 11.2 nm with fN2=1.00. Over the temperature range 600⩽Ts⩽860 °C, nucleation is diffusion limited with an activation energy Es of 1.1±0.1 eV for TiN(001) growth with fN2=0.10 and 1.4±0.1 eV in pure N2. We attribute the increase in Es to a higher steady-state N coverage resulting in an increase in the average x-value of the primary surface-diffusing species, TiNx admolecules.
Surface Morphology During Multilayer Epitaxial Growth of Ge(001).

JE VANNOSTRAND,SJ CHEY,MA HASAN,DG CAHILL,JE GREENE

DOI: https://doi.org/10.1103/physrevlett.74.1127

IF: 8.6

1995-01-01

Physical Review Letters

Abstract:The surface morphology of Ge(001) films grown by molecular beam epitaxy on a Ge(001) substrate is measured using scanning tunneling microscopy. Growth mounds are observed for single crystal films deposited at temperatures of 60-230\ifmmode^\circ\else\textdegree\fi{}C and film thicknesses of 5 nm to 1 \ensuremath{\mu}m. With increasing growth temperature, the average separation between mounds becomes increasingly well defined, increasing from less than 10 nm at 60\ifmmode^\circ\else\textdegree\fi{}C to nearly 200 nm at 230\ifmmode^\circ\else\textdegree\fi{}C. This regular arrangement of growth mounds is inconsistent with the self-affine growth morphology predicted by most kinetic roughening models.
Heteroepitaxial growth of TiN film on MgO (100) by reactive magnetron sputtering

Wei-Chun Chen,Chun-Yen Peng,Li Chang

DOI: https://doi.org/10.1186/1556-276x-9-551

2014-10-03

Nanoscale Research Letters

Abstract:TiN thin films were deposited on MgO (100) substrates at different substrate temperatures using rf sputtering with Ar/N2 ratio of about 10. At 700°C, the growth rate of TiN was approximately 0.05 μm/h. The structural and electrical properties of TiN thin films were characterized with x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall measurements. For all deposition conditions, XRD results show that the TiN films can be in an epitaxy with MgO with cube-on-cube orientation relationship of (001)TiN // (001)MgO and [100]TiN // [100]MgO. TEM with selected-area electron diffraction pattern verifies the epitaxial growth of the TiN films on MgO. SEM and AFM show that the surface of the TiN film is very smooth with roughness approximately 0.26 nm. The minimum resistivity of the films can be as low as 45 μΩ cm.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Scanning tunnelling microscopy studies of growth morphology in highly epitaxial c-axis oriented Pt thin film on (001) SrTiO3

X Chen,T Garrent,S.W Liu,Y Lin,Q.Y Zhang,C Dong,C.L Chen

DOI: https://doi.org/10.1016/S0039-6028(03)00954-3

IF: 1.9

2003-01-01

Surface Science

Abstract:A noble metal Pt thin film was successfully grown on (001) SrTiO3 substrate by using a DC-sputtering technique. The surface morphology and growth features of the as-grown Pt films were investigated by scanning tunnelling microscopy. Growth conditions, such as pre-sputtering, deposition ambience, and oxygen ratio are found to greatly affect the orientation, the crystallinity, and the epitaxial behavior of Pt films on (001) SrTiO3. Single-crystalline Pt films have been achieved by introducing a few percentage oxygen into the sputtering ambient. The in-plane-relationship of the c-axis oriented Pt thin films on (001) SrTiO3 was determined to be (001)Pt∥(001)SrTiO3 and [001]Pt∥[001]SrTiO3. Oxygen in the sputtering ambient was found to be a key factor to achieve the epitaxial Pt films.
Morphology And Microstructure Of Tensile-Strained Sige(001) Thin Epitaxial Films

Je Van Nostrand,Dg Cahill,I Petrov,Je Greene

DOI: https://doi.org/10.1063/1.366799

IF: 2.877

1998-01-01

Journal of Applied Physics

Abstract:Tensile-strained Si0.6Ge0.4 alloys are deposited on Ge(001) by molecular beam epitaxy, The morphology and microstructure of as-deposited (6.5-130 nm thick deposited at 325-508 degrees C) and annealed (2 min at 625 or 700 degrees C) epitaxial films are studied by in situ scanning tunneling microscopy, ex situ atomic force microscopy, and transmission electron microscopy. 6.5 nm thick films deposited at 325 and 410 degrees C are atomically flat with low densities of partial dislocations; stress relaxation of 6.5 nm thick films is limited by dislocation blocking, The surface morphology of thicker films grown at 410 degrees C is strongly influenced by the interactions of stacking faults and surface steps. Annealing of 13 nm thick films at 700 degrees C produces a severe roughening with the formation of a regular pattern of 50 nm deep surface pits bounded by {113} facets. (C) 1998 American Institute of Physics.
Surface Roughness and Pattern Formation During Homoepitaxial Growth of Ge(001) at Low Temperatures

JE VANNOSTRAND,SJ CHEY,DG CAHILL

DOI: https://doi.org/10.1116/1.587818

1995-01-01

Abstract:The evolution of surface roughness during growth of Ge(001) by molecular beam epitaxy at 155°C is characterized using in situ scanning tunneling microscopy. The range of film thickness studied spans more than three orders of magnitude, 0.1–200 nm. Beginning at a film thickness near 100 nm, a periodic pattern of growth mounds is observed. The average in-plane separation of growth features d evolves continuously with film thickness t, following a power law d=t0.42. The vertical roughness of the film does not follow a single power-law behavior over this range of film thickness.
Surface Morphology of GaAs(001) Grown by Solid- and Gas-Source Molecular Beam Epitaxy

JE VanNostrand,SJ Chey,DG Cahill,AE Botchkarev,H Morkoc

DOI: https://doi.org/10.1016/0039-6028(95)00939-6

IF: 1.9

1996-01-01

Surface Science

Abstract:Scanning tunneling microscopy is used to characterize the surface of homoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2° towards [110]. Films are grown using solid-source (A4) and gas-source (AsH3) arsenic at temperatures ranging from 500 to 650°C. The surface morphology of GaAs(001) is found to be extremely sensitive to growth temperature - for both solid- and gas-source molecular beam epitaxially grown films. Further, the presence of arsenic hydrides (hydrogen) reduces the surface roughness in the multilayer growth mode.
Microstructural Properties of Single Crystalline Pbte Thin Films Grown on Baf2(111) by Molecular Beam Epitaxy

JX Si,HZ Wu,TN Xu,CF Cao,ZC Huang

DOI: https://doi.org/10.1088/0256-307x/22/9/059

2005-01-01

Abstract:Single crystal PbTe thin films have been grown on BaF2 (111) by using solid source molecular beam epitaxy. The studies of evolution of the surface morphology with the increasing growth temperature from 375 to 525 degrees C by AFM show that PbTe epilayers exhibit smooth surface morphologies with atomic layer scale roughness and are crack free. It is found that for PbTe grown at 475 degrees C, the morphology is dominated by triangles and the rms roughness is 3.987nm. Compared to the rms roughnesses of 0.432nm and 0.759nm for the samples grown at 375 and 525 degrees C respectively, the surface of the PbTe layer grown at 475 degrees C is much rougher. This roughening transition is due to the interaction between the elastic relaxation and the plastic relaxation during the strain relaxation process. In contrast to the result of the morphology that the PbTe epitaxial layer grown at 375 degrees C has most smooth surface, as observed from the line width of x-ray diffraction curves at higher growth temperature improves the crystal quality of the single-crystalline PbTe layer.
Morphology Control of Epitaxial Monolayer Transition Metal Dichalcogenides

Akhil Rajan,Kaycee Underwood,Federico Mazzola,Philip D. C. King

DOI: https://doi.org/10.1103/PhysRevMaterials.4.014003

2019-10-08

Abstract:To advance fundamental understanding, and ultimate application, of transition-metal dichalcogenide (TMD) monolayers, it is essential to develop capabilities for the synthesis of high-quality single-layer samples. Molecular beam epitaxy (MBE), a leading technique for the fabrication of the highest-quality epitaxial films of conventional semiconductors has, however, typically yielded only small grain sizes and sub-optimal morphologies when applied to the van der Waals growth of monolayer TMDs. Here, we present a systematic study on the influence of adatom mobility, growth rate, and metal:chalcogen flux on the growth of NbSe2, VSe2 and TiSe2 using MBE. Through this, we identify the key drivers and influence of the adatom kinetics that control the epitaxial growth of TMDs, realising four distinct morphologies of the as-grown compounds. We use this to determine optimised growth conditions for the fabrication of high-quality monolayers, ultimately realising the largest grain sizes of monolayer TMDs that have been achieved to date via MBE growth.

Materials Science
Morphologies and Growth Mechanism of (tinb)c in TiNb-based Surface Reinforced Layer

Jianlei Zhu,Ying Jin,Lisheng Zhong,Suolao Li,Huijuan Cui,Chao Deng

DOI: https://doi.org/10.1016/j.mtcomm.2023.106251

IF: 3.8

2023-01-01

Materials Today Communications

Abstract:The TiNb-based surface-reinforced layer, which has a layered structure with various (TiNb)C particles, fabricated by in-situ solid-state diffusion carbonization reaction, (TiNb)C particles were investigated in three-dimensional space. The shape evolution and growth mechanism during fabrication were also discussed. To clarify the relationship between growth mechanism and the morphologies of the particles, the methods of low-temperature brittle fracture and stress corrosion cracking were adopted to investigate the morphological characteristics of particles in each layer. In the surface-reinforced layer, there are three kinds of particles with different sizes and diversified morphologies (quasi nano-sized near-spheroidal, micro-sized fusiform-like, and submicro-sized near-cubic), and the fusiform-like particles in the middle layer have lamellar structure. The results of EBSD indicate that the orientation relationship of each layer exhibits a random-directed-random relationship from outside to inside. The variation of size, morphologies, and orientation relationship is caused by the directed diffusion of carbon atoms and changes in the nucleation-growth mechanism. The analyses reveal that the growth mechanism of the (TiNb)C particles changes from spherical to lamellar and then back to spherical. The solid-state phase transformation condition induces the formation of the special middle part in the surface-reinforced layer, which has a lamellar structure and special < 110 > orientation relationship.
A Molecular Dynamics Simulation of TiN Film Growth on TiN(0 0 1)

Z. H. Xu,L. Yuan,D. B. Shan,B. Guo

DOI: https://doi.org/10.1016/j.commatsci.2010.11.030

IF: 3.572

2011-01-01

Computational Materials Science

Abstract:The growth of thin TiN films on the TiN(001) surface during reactive sputtering was simulated by molecular dynamics with the modified embedded-atom method potential. TiN3 is found to be the smallest epitaxial island and the film grows via the layer mode. Vacancy concentration in the deposited films decreases with increasing the substrate temperature and kinetic energy of incident atoms, resulting from the enhancement of the thermal diffusion and kinetic energy assisted athermal diffusion. To get the stoichiometric TiN film, the N:Ti flux ratio should be larger than unity and be increased with higher incident energy due to the weak adsorption of atomic N on TiN(001).
Epitaxial growth of TiN on (0001) semi-insulating 4H-SiC substrate by reactive sputtering

Hsueh-I Chen,Kun-An Chiu,Jing-Feng Lin,Kuan-Yu Lin,Wei-Chia Chen,Ping-Hsun Wu,Cheng-Jung Ko,Li Chang,Chun-Hua Chen

DOI: https://doi.org/10.1016/j.surfcoat.2022.128357

IF: 4.865

2022-05-01

Surface and Coatings Technology

Abstract:Growth of epitaxial TiN film on a semi-insulating single crystal (0001) SiC substrate has been achieved by DC magnetron reactive sputtering deposition. The effects of growth temperature and N2 flow ratio in Ar on film quality and growth rate were investigated. X-ray diffraction (XRD) characterization shows that all the deposited TiN films at 550 and 700 °C are heteroepitaxially grown on SiC with the epitaxial relationship between TiN and 4H-SiC in (111)TiN//(0001)SiC and [11¯0]TiN//[112¯0]4H-SiC. Increasing the N2 flow ratio from 4 to 8% results in improvement of the film quality and a decrease in the growth rate. The width of the X-ray rocking curve of TiN (111) reflection can reach a value as small as 249 arcsec and the resistivity of TiN film can be 21 μΩ·cm for deposition at 700 °C with 8% N2 flow ratio. Measurements by atomic force microscopy show that the surface roughness of the TiN film can be 1.1 nm. X-ray photoelectron spectroscopy reveals that TiN composition is nearly in stoichiometry for all the grown TiN films. Examinations by cross-sectional transmission electron microscopy show that TiN is directly grown on SiC and verify the epitaxial relationship from XRD.

physics, applied,materials science, coatings & films
Growth and mechanical anisotropy of TiN thin films

W.J. Meng,G.L. Eesley

DOI: https://doi.org/10.1016/0040-6090(95)06875-9

IF: 2.1

1995-12-01

Thin Solid Films

Abstract:We have grown TiN thin films on Si(100) and Si(111) substrates by ultra-high vacuum d.c. magnetron reactive sputtering. TiN grows on Si(111) epitaxially while almost completely textured growth of TiN on Si(100) is achieved. Elastic constants of the TiN film are determined by measuring the longitudinal sound velocity with a time-resolved transient piezoreflectance technique. The mechanical response of these crystallographically anisotropic TiNSi film/substrate assemblies was further studied by sub-micron depth-sensing indentation. Consistent with the observed film orientations, we find an anisotropic mechanical response. Measured indentation modulus and hardness as a function of indentation depth are consistent with existing theories.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
Growth, Structure, and Morphology of Van Der Waals Epitaxy Cr1+δTe2 Films.

Xiaodan Wang,Hua Zhou,Lihui Bai,Hui-Qiong Wang

DOI: https://doi.org/10.1186/s11671-023-03791-y

2023-01-01

Discover Nano

Abstract:The preparation of two-dimensional magnetic materials is a key process to their applications and the study of their structure and morphology plays an important role in the growth of high-quality thin films. Here, the growth, structure, and morphology of Cr1+dTe2 films grown by molecular beam epitaxy on mica with variations of Te/Cr flux ratio, growth temperature, and film thickness have been systematically investigated by scanning tunneling microscopy, reflection high-energy electron diffraction, scanning electron microscope, and X-ray photoelectron spectroscopy. We find that a structural change from multiple phases to a single phase occurs with the increase in growth temperature, irrespective of the Cr/Te flux ratios, which is attributed to the desorption difference of Te atoms at different temperatures, and that the surface morphology of the films grown at relatively high growth temperatures (= 300 ?) exhibits a quasi-hexagonal mesh-like structure, which consists of nano-islands with bending surface induced by the screw dislocations, as well as that the films would undergo a growth-mode change from 2D at the initial stage in a small film thickness (2 nm) to 3D at the later stage in thick thicknesses (12 nm and 24 nm). This work provides a general model for the study of pseudo-layered materials grown on flexible layered substrates.
Epitaxial growth and microstructure of TiN/CrO N periodic multilayers

Xuan Liu,Yuchun Tu,Yanyan Yuan,Lin Zhang,Rui Lan

DOI: https://doi.org/10.1016/j.ceramint.2022.06.043

IF: 5.532

2022-10-01

Ceramics International

Abstract:The effect of epitaxial growth on the mechanical properties of periodic multilayer coatings is an important research topic. The focus of this study is the microstructure and mechanical properties of TiN/CrO x N y periodic multilayer thin films consisting of modulated TiN layers. All samples were prepared by magnetron sputtering with varying sputtering powers for the TiN layer, but the CrO x N y layer remained constant. The grazing incidence X-ray reflectometry (GIXRR) and transmission electron microscopy (TEM) results demonstrate the well-defined periodic structure of the thin films, and an accumulating distortion was observed as more layers were added along the growth direction. The results show that the TiN/CrO x N y multilayers possessed a face-centred cubic (fcc) crystal structure and exhibited a (200) preferred orientation of TiN. The thickness of the TiN layers affected the crystalline orientation of the layers. Alternate-orientation epitaxial growth of CrO x N y layers along the TiN layers occurred when N2 was introduced. The introduction of nitrogen and the thickness of the TiN template layers significantly influenced the microstructure and crystallinity of the deposited nanomultilayers. The hardness of the multilayer films was determined by the nanoindentation. The TiN/CrO x N y periodic multilayer prepared from the TiN layer by direct current (DC) sputtering power had the highest nano hardness value, 28.7Gpa.

materials science, ceramics
Morphological Evolution of Tic from Octahedron to Cube Induced by Elemental Nickel

Jinfeng Nie,Yuying Wu,Pengting Li,Hui Li,Xiangfa Liu

DOI: https://doi.org/10.1039/c1ce06205k

IF: 3.756

2012-01-01

CrystEngComm

Abstract:TiC particles with various morphologies from octahedron to cube were synthesized and investigated by Field emission scanning electron microscopy (FESEM) in three-dimensional space. The morphological evolution of TiC grain and its growth mechanism were also discussed. TiC particles prefer an octahedral morphology (equilibrium shape) enclosed by eight {111} facets with minimized total surface free energy in Al-Ti-C alloy, while they tend to form a cube enclosed by six {100} facets under the influence of Ni in Al-Ni-Ti-C alloy. Due to the strong interaction between Ni-3d and C-2p orbitals, Ni atoms in the melt selectively absorb on {100} faces of the growing TiC crystal rather than on the polar {111} faces and reduce the specific surface energy of {100}. According to Wuff's theorem, the growth rate of {100} is lowered correspondingly, while the relative growth rate of {111} is accelerated. Thus, the higher growth rate along < 111 > direction will lead to the shrinkage of {111} faces gradually, while six {100} faces are reserved to form a TiC cube because of their lower growth rates. Furthermore, a similar morphology evolution to TiC crystals can also be found in Fe-and Co-containing melts. It is revealed that the crystal growth of TiC follows the same model under the effect of group VIII elements (Fe, Co and Ni).
Microstructure and Properties of (ti,al) N Coating

CHEN Li,WU En-xi,YIN Fei,WANG She-quan,WANG Xiu-quan

DOI: https://doi.org/10.3321/j.issn:1004-0609.2006.02.013

2006-01-01

The Chinese Journal of Nonferrous Metals

Abstract:The properties of magnetron sputtered TiN and(Ti,Al)N coatings grown on cemented carbide substrates were studied by electron probe microanalysis(EPMA),X-ray diffractometry(XRD),scanning electron(microscopy)(SEM),nanoindentation, energy dispersive X-ray spectroscopy(EDX),oxidation experiment and cutting tests.The results show that TiN coating is bell mouth columnar structures and(Ti,Al)N coating is fcc straight(columnar) structures.The(Ti,Al)N coating shows a fairly strong(200) preferred orientation because Ti atoms in the TiN lattice are substituted by Al atoms.The epitaxial growth is not found between(Ti,Al)N coating and substrate.The(Ti,Al)N coating becomes Al_2O_3/ TiO_2/(Ti,Al)N multilayer after oxidated at 800℃.The((Ti,Al)N) coating exhibits higher hardness,excellent cutting performance compared with TiN coating.

Morphology of Epitaxial Tin(001) Grown by Magnetron Sputtering

In Situ Scanning Tunneling Microscopy Studies of the Evolution of Surface Morphology and Microstructure in Epitaxial TiN(001) Grown by Ultra-High-vacuum Reactive Magnetron Sputtering

Effects of High-Flux Low-Energy Ion Bombardment on the Low-Temperature Growth Morphology of Tin(001) Epitaxial Layers

Nucleation Kinetics During Homoepitaxial Growth of Tin(001) by Reactive Magnetron Sputtering

Nucleation Kinetics Versus Nitrogen Partial Pressure During Homoepitaxial Growth of Stoichiometric Tin(001): A Scanning Tunneling Microscopy Study

Surface Morphology During Multilayer Epitaxial Growth of Ge(001).

Heteroepitaxial growth of TiN film on MgO (100) by reactive magnetron sputtering

Scanning tunnelling microscopy studies of growth morphology in highly epitaxial c-axis oriented Pt thin film on (001) SrTiO3

Morphology And Microstructure Of Tensile-Strained Sige(001) Thin Epitaxial Films

Surface Roughness and Pattern Formation During Homoepitaxial Growth of Ge(001) at Low Temperatures

Surface Morphology of GaAs(001) Grown by Solid- and Gas-Source Molecular Beam Epitaxy

Microstructural Properties of Single Crystalline Pbte Thin Films Grown on Baf2(111) by Molecular Beam Epitaxy

Morphology Control of Epitaxial Monolayer Transition Metal Dichalcogenides

Morphologies and Growth Mechanism of (tinb)c in TiNb-based Surface Reinforced Layer

A Molecular Dynamics Simulation of TiN Film Growth on TiN(0 0 1)

Epitaxial growth of TiN on (0001) semi-insulating 4H-SiC substrate by reactive sputtering

Growth and mechanical anisotropy of TiN thin films

Growth, Structure, and Morphology of Van Der Waals Epitaxy Cr1+δTe2 Films.

Epitaxial growth and microstructure of TiN/CrO N periodic multilayers

Morphological Evolution of Tic from Octahedron to Cube Induced by Elemental Nickel

Microstructure and Properties of (ti,al) N Coating