Laser Directly Written Junctionless In-plane-Gate Neuron Thin Film Transistors with AND Logic Function

Li Qiang Zhu,Guo Dong Wu,Ju Mei Zhou,Wei Dou,Hong Liang Zhang,Qing Wan
DOI: https://doi.org/10.1063/1.4789515
IF: 4
2013-01-01
Applied Physics Letters
Abstract:Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature by a laser scribing process. The neuron transistors are composed of a bottom indium-tin-oxide floating gate and multiples of in-plane control gates. The control gates, coupling with the floating gate, control the “on” and “off” of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost.
What problem does this paper attempt to address?