Neuron-like Functionality of a Silicon Optical Transistor

Leo T. Varghese,Li Fan,Jian Wang,Yi Xuan,Andrew M. Weiner,Minghao Qi

DOI: https://doi.org/10.1364/cleo_at.2013.jtu4a.34

2013-01-01

Abstract:We demonstrate an all-silicon optical transistor that realizes NAND and NOR logic without the need to physically alter the device. The device is cascadable and may provide an efficient solid-state implementation of artificial neural networks.

What problem does this paper attempt to address?

(Invited) Silicon Nanocrystals for Optoelectronic Synaptic Devices

Xiaodong Pi

DOI: https://doi.org/10.1149/ma2020-01161057mtgabs

2020-01-01

ECS Meeting Abstracts

Abstract:Nowadays neuromorphic computing is regarded as one of the most promising solutions to the Von Neumann bottleneck due to its high intelligence and low energy consumption. The development of neuromorphic computing critically depends on synaptic devices, which simulate biological synapses in neural systems. The incorporation of light into synaptic devices has been recently inspired by the exciting development of optogenetics in neuroscience. Although optically stimulated synaptic devices with electrical output have been realized, the use of light as the output of synaptic devices under electrical stimulation has not been demonstrated. This may impede the full optoelectronic integration of artificial neural systems for neuromorphic computing. In this talk I shall introduce our recent work on using light-emitting silicon nanocrystals (Si NCs) [1] to fabricate electroluminescent synaptic devices [2,3]. These devices exhibit a series of important synaptic functionalities, including paired-pulse facilitation (PPF), transition from short-term plasticity (STP) to long-term plasticity (LTP) and spike-timing-dependent plasticity (STDP). In the meantime, logic functions such as "AND", "OR", "NAND" and "NOR" can also be realized by using these electroluminescent synaptic devices. References Y. Ni, S. Zhou, S. Y. Zhao, W. B. Peng, D. Yang and X. D. Pi, Silicon nanocrystals: unfading silicon materials for optoelectronics, Materials Science & Engineering R 138, 85-117 (2019). Y. Zhao, Y. Wang, W. Huang, H. Jin, P. W. Huang, H. Wang, K. Wang, D. S. Li, M. S. Xu, D. Yang and X. D. Pi, Developing near-infrared quantum-dot light-emitting diodes to mimic synaptic plasticity, Science China Materials 62, 1470–1478 (2019). Y. Zhao, Z. Y. Ni, H. Tan, Y. Wang, H. Jin, T. X. Nie, M. S. Xu, X. D. Pi and D. Yang, Electroluminescent synaptic devices with logic functions, Nano Energy 54, 383-389 (2018).
Artificial Neuron Based on Nonlinear Polarization Rotation in a Semiconductor Optical Amplifier

Qiang Li,Zhi Wang,Huiying Wang,Can Cui,Chongqing Wu

DOI: https://doi.org/10.1016/j.optcom.2018.11.074

IF: 2.4

2018-01-01

Optics Communications

Abstract:We experimentally demonstrated an optoelectronic artificial neuron model, which can perform sigmoid transfer function. The proposed optoelectronic circuit can mimic the behavior of continuous sigmoidal neuron based on the nonlinear polarization rotation (NPR) in a single semiconductor optical amplifier (SOA). Because the current-induced NPR is anti-parallel to the optical power-induced NPR, excitatory and inhibitory stimuli to the proposed artificial neuron can be implemented by optical injection and electrical modulation, respectively. The response of the proposed neuron to excitatory inputs and inhibitory inputs are related to the initial state of polarization (SOP), bias current and power of probe beam. By adjusting the initial SOP, the neuron can be more likely to be excited or inhibited.
Electroluminescent Synaptic Devices with Logic Functions

Shuangyi Zhao,Zhenyi Ni,Hua Tan,Yue Wang,Hao Jin,Tongxin Nie,Mingsheng Xu,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1016/j.nanoen.2018.10.018

IF: 17.6

2018-01-01

Nano Energy

Abstract:The incorporation of light into synaptic devices for neuromorphic computing with low energy consumption and high intelligence is greatly inspired by the development of optogenetics in neuroscience. However, the use of light as the outputs of synaptic devices has not been demonstrated yet, impeding the full optoelectronic integration of artificial neural systems. Here we demonstrate electroluminescent synaptic devices based on silicon nanocrystals (Si NCs) with optical outputs. These devices exhibit a series of important synaptic functionalities including paired-pulse facilitation (PPF), transition from short-term plasticity (STP) to long-term plasticity (LTP) and spike-timing-dependent plasticity (STDP). In the meantime, logic functions such as "AND", "OR", "NAND" and "NOR" are realized in the intercoupled Si-NC-based electroluminescent synaptic devices. The current results not only help realize the bidirectional conversion between electrical and optical signals in synaptic devices, but also contribute to the development of the in-memory computing capacity of synaptic devices.
Optical Diodes And Transistors On A Silicon Chip

Minghao Qi,Leo T. Varghese,Jian Wang,Li Fan,Yi Xuan,Ben Niu,Chookiat Tansarawiput,Justin C. Wirth,Andrew M. Weiner,Fuwan Gan,Xi Wang

DOI: https://doi.org/10.1364/cleo_qels.2013.qf1d.1

2013-01-01

Abstract:An add-drop filter with asymmetric coupling to bus waveguides, cascaded with a notch filter, achieves diode and transistor effects, and realizes NAND and NOR logic without physically altering the device, emulating the function of neurons. (C) 2013 Optical Society of America
Fully UV Modulated Artificial Synapses with Integrated Sensing, Storage and Computation

Shuyi Sun,Tao Zhang,Shuoqi Jin,Xinhua Pan,Jianguo Lu,Zhizhen Ye,Bin Lu

DOI: https://doi.org/10.1002/adfm.202401403

IF: 19

2024-01-01

Advanced Functional Materials

Abstract:Optical synaptic devices are considered a preferred substitute to electrical synapses for low-energy, high-efficiency neuromorphic computing (NC). However, most optical synapses irreversible optical response severely restricts their application scenarios. In this study, a fully photon-modulated synaptic device constructed from Si-doped beta-gallium oxide (beta-Ga2O3)/ZnO heterojunction is demonstrated. The device exhibits reversible conductance changes and mimics a range of synaptic behaviors, which are modulated by two different wavelengths (255 and 370 nm) of UV light. Owing to the device's plasticity, four types of logic functions including "AND", "OR", "NOR" and "NAND" are implemented in the device by optical stimulation. Furthermore, an artificial neural network (ANN) is simulated based on the device's excitatory and inhibitory characteristics, and an optical programming scheme is employed to enhance the network's performance, resulting in a high recognition rate of 95.5% for handwritten digits. The fully photon-modulated synapse development strategy and programming scheme, as presented in this work, advance the utilization of optical artificial synapses in ANN. In this work, a fully UV modulated artificial synapse is achieved through the Si-doped beta-Ga2O3/ZnO heterojunction. The device conductance response to light is non-volatile, which enables a range of synaptic plasticity. Furthermore, the application of logic gates and handwritten digit recognition are realized by the device, indicating its immense potential in neuromorphic computing (NC). image
Synaptic Silicon-Nanocrystal Phototransistors for Neuromorphic Computing

Lei Yin,Cheng Han,Qingtian Zhang,Zhenyi Ni,Shuangyi Zhao,Kun Wang,Dongsheng Li,Mingsheng Xu,Huaqiang Wu,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1016/j.nanoen.2019.103859

IF: 17.6

2019-01-01

Nano Energy

Abstract:The incorporation of augmentative functionalities into a single synaptic device is greatly desired to enhance the performance of neuromorphic computing, which has brain-like high intelligence and low energy consumption. This encourages the development of multi-functional synaptic devices with architectures that are capable of achieving demanded synaptic plasticity. Here we take advantage of the remarkable optical absorption of boron (B)-doped silicon nanocrystals (Si NCs) to make synaptic phototransistors, which can be stimulated by both optical and electrical spikes. The optical and electrical stimulations enable a series of important synaptic functionalities for the synaptic Si-NC phototransistors, well mimicking biological synapses. It is interesting that the synergy of the photogating and electrical gating of the synaptic Si-NC phototransistors leads to the implementation of aversion learning and logic functions. We show that a spiking neural network based on the synaptic Si-NC phototransistors may be trained for the recognition of handwritten digits in the modified national institute of standards and technology (MNIST) database with a recognition accuracy around 94%. The energy consumption of the synaptic Si-NC phototransistors may be rather low, which should help advance energy-efficient neuromorphic computing.
Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Lei Yin,Wen Huang,Rulei Xiao,Wenbing Peng,Yiyue Zhu,Yiqiang Zhang,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1021/acs.nanolett.0c00298

IF: 10.8

2020-01-01

Nano Letters

Abstract:Optoelectronic synaptic devices have been attracting increasing attention due to their critical role in the development of neuromorphic computing based on optoelectronic integration. Here we start with silicon nanomembrane (Si NM) to fabricate optoelectronic synaptic devices. Organolead halide perovskite (MAPbI3) is exploited to form a hybrid structure with Si NM. We demonstrate that synaptic transistors based on the hybrid structure are very sensitive to optical stimulation with low energy consumption. Synaptic functionalities such as excitatory post-synaptic current (EPSC), paired-pulse facilitation, and transition from short-term memory to long-term memory (LTM) are all successfully mimicked by using these optically stimulated synaptic transistors. The backgate-enabled tunability of the EPSC of these devices further leads to the LTM-based mimicking of visual learning and memory processes under different mood states. This work contributes to the development of Si-based optoelectronic synaptic devices for neuromorphic computing.
A MoS2-based coplanar neuron transistor for logic applications

S G Hu,Y Liu,H K Li,T P Chen,Q Yu,L J Deng

DOI: https://doi.org/10.1088/1361-6528/aa6b47

IF: 3.5

2017-05-26

Nanotechnology

Abstract:The human brain is an extremely complex system of 1010-1011 neurons. To construct brain-like neuromorphic hardware, the neuron unit should be implemented effectively. Here, we report a neuron transistor based on a MoS2 flake, which has summation and threshold functions similar to biological neurons and may act as a basic neuron unit in neuromorphic hardware. The neuron transistor is composed of a floating gate and two control gates. A heavily doped silicon substrate serves as the floating gate, while the two control gates are capacitively coupled with the floating gate. The neuron transistor can be well controlled by the two control gates individually or simultaneously. The drain current can be modulated by the input voltages at the control gates. While the current response of the neuron transistor has a large dependence on the magnitude of the input signal, it shows little dependence on the frequency of the input signal. To demonstrate the potential neuromorphic application of the neuron transistor, functions including abacus-like function, AND logic and OR logic are realized in the neuron transistor.
Photogated Synaptic Transistors Based on the Heterostructure of 4H-Sic and Organic Semiconductors for Neuromorphic Ultraviolet Vision

Xiao Liu,Wen Huang,Cuihong Kai,Lei Yin,Yue Wang,Xiaoping Liu,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1021/acsaelm.2c01390

IF: 4.494

2023-01-01

ACS Applied Electronic Materials

Abstract:Neuromorphic vision that integrates the functionalities of sensing, memory, and processing may provide an important approach to overcome the drawbacks of a conventional artificial visual system such as data redundancy and high-power consumption. It has exhibited considerable potential to mimic the functionalities of human vision even beyond the visible-light range. In this work, we show an ultraviolet (UV)-responsive synaptic transistor based on the heterostructure of 4H-SiC and organic semiconductors. Benefiting from the heterostructure design and photogating effect, the non -volatility of the synaptic transistor is achieved. Various biological synaptic functionalities are successfully mimicked by the synaptic transistor. The electrical energy consumption of the device per synaptic event is only 0.55 fJ, which is comparable to the energy consumption of a biological synapse. Furthermore, the dynamic learning and forgetting process of the image of a letter is simulated by using an array of the devices, demonstrating the potential of the UV-responsive synaptic devices for neuromorphic UV vision with the capability of the image recognition and memory.
AlGaN/GaN-Based Optoelectronic Synaptic Devices for Neuromorphic Computing

Cuihong Kai,Yue Wang,Xiaoping Liu,Xiao Liu,Xuqing Zhang,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1002/adom.202202105

IF: 9

2023-01-01

Advanced Optical Materials

Abstract:Neuromorphic computing promises to overcome the Von Neumann bottleneck of traditional computers. Optoelectronic synaptic devices are greatly desired given their potential applications in neuromorphic computing. In this work, optoelectronic synaptic devices with long-term memory are fabricated. The devices are based on a GaN/AlGaN/AlN/GaN heterojunction and a SiNx charge trapping layer. Synaptic functionalities including excitatory postsynaptic current, paired pulse facilitation, and transition from short-term memory to long-term memory are realized. The retention time of long-term memory may be more than 10 years, demonstrating the reliable charge storage of the devices. Logic functions are also realized by synergizing the photogating and electrical gating of the devices. The responsivity and specific detectivity are 2.64 x 10(5) A W-1 and 1.79 x 10(16) Jones at the optical power density of 1.4 mW cm(-2), respectively. In addition, the devices have a reconfigurable switch of 1000 cycles with working temperature up to 200 degrees C.
Optical Implementation of Neural Learning Algorithms Based on Cross-gain Modulation in a Semiconductor Optical Amplifier

Qiang Li,Zhi Wang,Yansi Le,Chonghui Sun,Xiaojia Song,Chongqing Wu

DOI: https://doi.org/10.1117/12.2245976

2016-01-01

Abstract:Neuromorphic engineering has a wide range of applications in the fields of machine learning, pattern recognition, adaptive control, etc. Photonics, characterized by its high speed, wide bandwidth, low power consumption and massive parallelism, is an ideal way to realize ultrafast spiking neural networks (SNNs). Synaptic plasticity is believed to be critical for learning, memory and development in neural circuits. Experimental results have shown that changes of synapse are highly dependent on the relative timing of pre- and postsynaptic spikes. Synaptic plasticity in which presynaptic spikes preceding postsynaptic spikes results in strengthening, while the opposite timing results in weakening is called antisymmetric spike-timing-dependent plasticity (STDP) learning rule. And synaptic plasticity has the opposite effect under the same conditions is called antisymmetric anti-STDP learning rule. We proposed and experimentally demonstrated an optical implementation of neural learning algorithms, which can achieve both of antisymmetric STDP and anti-STDP learning rule, based on the cross-gain modulation (XGM) within a single semiconductor optical amplifier (SOA). The weight and height of the potentitation and depression window can be controlled by adjusting the injection current of the SOA, to mimic the biological antisymmetric STDP and anti-STDP learning rule more realistically. As the injection current increases, the width of depression and potentitation window decreases and height increases, due to the decreasing of recovery time and increasing of gain under a stronger injection current. Based on the demonstrated optical STDP circuit, ultrafast learning in optical SNNs can be realized.
Boolean Computation in Single‐Transistor Neuron

Hanxi Li,Jiayang Hu,Yishu Zhang,Anzhe Chen,Li Lin,Ge Chen,Yance Chen,Jian Chai,Qian He,Hailiang Wang,Shiman Huang,Jiachao Zhou,Yang Xu,Bin Yu

DOI: https://doi.org/10.1002/adma.202409040

IF: 29.4

2024-10-17

Advanced Materials

Abstract:This work demonstrates an in situ reconfigurable "computing neuron" prototype with wafer‐scale fabrication distinguished from a widespread collapsed integrator artificial neuron. The ambipolar nature can be further adapted to construct highly efficient soft‐XOR‐based neural networks. Brain neurons exhibit far more sophisticated and powerful information‐processing capabilities than the simple integrators commonly modeled in neuromorphic computing. A biological neuron can in fact efficiently perform Boolean algebra, including linear nonseparable operations. Traditional logic circuits require more than a dozen transistors combined as NOT, AND, and OR gates to implement XOR. Lacking biological competency, artificial neural networks require multilayered solutions to exercise XOR operation. Here, it is shown that a single‐transistor neuron, harnessing the intrinsic ambipolarity of graphene and ionic filamentary dynamics, can enable in situ reconfigurable multiple Boolean operations from linear separable to linear nonseparable in an ultra‐compact design. By leveraging the spatiotemporal integration of inputs, bio‐realistic spiking‐dependent Boolean computation is fully realized, rivaling the efficiency of a human brain. Furthermore, a soft‐XOR‐based neural network via algorithm‐hardware co‐design, showcasing substantial performance improvement, is demonstrated. These results demonstrate how the artificial neuron, in the ultra‐compact form of a single transistor, may function as a powerful platform for Boolean operations. These findings are anticipated to be a starting point for implementing more sophisticated computations at the individual transistor neuron level, leading to super‐scalable neural networks for resource‐efficient brain‐inspired information processing.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Optically Modulated Nanofluidic Ionic Transistor for Neuromorphic Functions

Jiao Wang,Yanan Jiang,Tianyi Xiong,Jiahao Lu,Xiulan He,Ping Yu,Lanqun Mao

DOI: https://doi.org/10.1002/anie.202418949

2024-11-28

Angewandte Chemie International Edition

Abstract:Neuromorphic systems that can emulate the behavior of neurons have garnered increasing interest across interdisciplinary fields due to their potential applications in neuromorphic computing, artificial intelligence and brain-machine interfaces. However, the optical modulation of nanofluidic ion transport for neuromorphic functions has been scarcely reported. Herein, inspired by biological systems that rely on ions as signal carriers for information perception and processing, we present a nanofluidic transistor based on a metal-organic framework membrane (MOFM) with optically modulated ion transport properties, which can mimic the functions of biological synapses. Through the dynamic modulation of synaptic weight, we successfully replicate intricate learning-experience behaviors and Pavlovian associate learning processes by employing sequential optical stimuli. Additionally, we demonstrate the application of the International Morse Code with the nanofluidic device using patterned optical pulse signals, showing its encoding and decoding capabilities in information processing process. This study would largely advance the development of nanofluidic neuromorphic devices for biomimetic iontronics integrated with sensing, memory and computing functions.

chemistry, multidisciplinary
Photonic Synaptic Device Capable of Optical Memory and Logic Operations

Shuchao Qin,Yujie Liu,Xiaomu Wang,Yongbing Xu,Yi Shi,Rong Zhang,Fengqiu Wang

DOI: https://doi.org/10.1364/cleo_si.2017.sw4k.7

2017-01-01

Abstract:We demonstrate an optically-driven artificial synapse based on a graphene hybrid phototransistor. Both optical memory function (long-term plasticity) and logic operations are achieved, which adds important new capabilities to photonics enabled neuromorphic computing.
Laser Directly Written Junctionless In-plane-Gate Neuron Thin Film Transistors with AND Logic Function

Li Qiang Zhu,Guo Dong Wu,Ju Mei Zhou,Wei Dou,Hong Liang Zhang,Qing Wan

DOI: https://doi.org/10.1063/1.4789515

IF: 4

2013-01-01

Applied Physics Letters

Abstract:Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature by a laser scribing process. The neuron transistors are composed of a bottom indium-tin-oxide floating gate and multiples of in-plane control gates. The control gates, coupling with the floating gate, control the “on” and “off” of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost.
Programmable Optoelectronic Synaptic Transistors Based on MoS2/Ta2NiS5 Heterojunction for Energy‐Efficient Neuromorphic Optical Operation

Junru An,Nan Zhang,Fan Tan,Xingyu Zhao,Chunlu Chang,Mario Lanza,Shaojuan Li

DOI: https://doi.org/10.1002/smll.202403103

IF: 13.3

2024-05-24

Small

Abstract:This article presents an all‐2D vdW heterojunction‐based programmable optoelectronic synaptic transistor. The device implements reconfigurable, multilevel NVM states through sequential modulation of multiple optical and electrical stimuli to achieve broadband, energy‐efficient, hetero‐synaptic functionality, including biological emotions, withdrawal reactions, and logic functions. The optoelectronic synaptic transistors with various functions, broad spectral perception, and low power consumption are an urgent need for the development of advanced optical neural network systems. However, it remains a great challenge to realize the functional diversification of the systems on a single device. 2D van der Waals (vdW) materials can combine unique properties by stacking with each other to form heterojunctions, which may provide a strategy for solving this problem. Herein, an all‐2D vdW heterojunction‐based programmable optoelectronic synaptic transistor based on MoS2/Ta2NiS5 heterojunctions is demonstrated. The device implements reconfigurable, multilevel non‐volatile memory (NVM) states through sequential modulation of multiple optical and electrical stimuli to achieve broadband (532–808 nm), energy‐efficient (17.2 fJ), hetero‐synaptic functionality in a bionic manner. The intrinsic working mechanisms of the photogating effect caused by band alignment and the interfacial trapping defect modulation induced by gate voltage are revealed by Kelvin‐probe force microscopy (KPFM) measurements and carrier transport analysis. Overall, the (opto)electronic synaptic weight controllability for combined in‐sensor and in‐memory logic processors is realized by the heterojunction properties. The proposed findings facilitate the technical realization of generic all 2D hetero‐synapses for future artificial vision systems, opto‐logical systems, and Internet of Things (IoT) entities.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Solid-State Oxide-Ion Synaptic Transistor for Neuromorphic Computing

Philipp Langner,Francesco Chiabrera,Nerea Alayo,Paul Nizet,Luigi Morrone,Carlota Bozal-Ginesta,Alex Morata,Albert Tarancòn

2024-08-01

Abstract:Neuromorphic hardware facilitates rapid and energy-efficient training and operation of neural network models for artificial intelligence. However, existing analog in-memory computing devices, like memristors, continue to face significant challenges that impede their commercialization. These challenges include high variability due to their stochastic nature. Microfabricated electrochemical synapses offer a promising approach by functioning as an analog programmable resistor based on deterministic ion-insertion mechanisms. Here, we developed an all-solid-state oxide-ion synaptic transistor employing $\text{Bi}_2\text{V}_{0.9}\text{Cu}_{0.1}\text{O}_{5.35}$ as a superior oxide-ion conductor electrolyte and $\text{La}_\text{0.5}\text{Sr}_\text{0.5}\text{F}\text{O}_\text{3-$\delta$}$ as a variable resistance channel able to efficiently operate at temperatures compatible with conventional electronics. Our transistor exhibits essential synaptic behaviors such as long- and short-term potentiation, paired-pulse facilitation, and post-tetanic potentiation, mimicking fundamental properties of biological neural networks. Key criteria for efficient neuromorphic computing are satisfied, including excellent linear and symmetric synaptic plasticity, low energy consumption per programming pulse, and high endurance with minimal cycle-to-cycle variation. Integrated into an artificial neural network (ANN) simulation for handwritten digit recognition, the presented synaptic transistor achieved a 96% accuracy on the MNIST dataset, illustrating the effective implementation of our device in ANNs. These findings demonstrate the potential of oxide-ion based synaptic transistors for effective implementation in analog neuromorphic computing based on iontronics.

Emerging Technologies,Applied Physics
All‐Optical Nonlinear Neuron Based on Metallic Quantum Wells

Junru Niu,Hua Shao,Yiming Feng,Bingtao Gao,Yiyun Zhang,Ying Li,Hongsheng Chen,Haoliang Qian

DOI: https://doi.org/10.1002/adom.202300223

IF: 9

2023-04-25

Advanced Optical Materials

Abstract:An effectual all‐optical nonlinear neuron is proposed for implementing the sigmoid activation function in optical neural networks. The device uses a double‐ring resonator and metallic quantum wells exhibiting a large and ultrafast Kerr nonlinearity. It achieves a sigmoid activation function with a high modulation depth of 18.78 dB and a rapid transition rate of 13 GW cm−2 per 3 dB. Optical nonlinear neuron, as an essential implementation method for optical interconnection, could greatly promote the development of optical neuron networks, which appears to be a promising alternative to electronic neural networks that are limited by computing speed and the end of Moore's law. However, restricted by weak nonlinearities, the modulation performance of optical nonlinear neuron networks is much lower compared to their electronic counterparts. Therefore, an effectual all‐optical nonlinear neuron is proposed by combining a double‐ring resonator with field‐enhancement and metallic quantum wells (MQWs) with a large Kerr nonlinear response. Based on the large and ultrafast Kerr nonlinearity provided by MQWs, the device can achieve a modulation extinction ratio of 18.78 dB and a transition rate of 13 GW cm−2 per 3 dB. The work may provide a new route for integrated, ultrafast, and high‐efficient optical nonlinear neurons for on‐chip neuron networks.

materials science, multidisciplinary,optics
All-optical logic gate NAND using semiconductor optical amplifiers with simulation

K. Mukherjee,A. Raja,K. Maji

DOI: https://doi.org/10.1007/s12596-019-00555-9

IF: 2.1

2019-08-16

Journal of Optics

Abstract:Hybrid encoding technique for the representation of the binary states of information, four-wave mixing in semiconductor optical amplifier (SOA) as frequency generator and cross-polarization rotation effect in semiconductor optical amplifier as a frequency converter are used to design all-optical universal logic gate NAND. The devices can perform ultrafast operation and easily integrable. The simulated results of the proposed logic gate ensure feasibility of the proposals.

optics
Optically Stimulated Synaptic Devices Based on Silicon-Tin Alloyed Thin Film

Wen Rui Xu,Nasir Ilyas,Hong Zhuo Gao,Wei Li,Xiang Dong Jiang

DOI: https://doi.org/10.1117/12.2606806

2021-01-01

Abstract:The implementation of biological synapses onto a hardware platform is an important step toward neuromorphic electronics. However, to replicate biological functions, electronic synapses still have to be reliant on the electric field, or the output of synaptic devices is photonic rather than an electronic synapse. Therefore, the development of optoelectronic synapses with optically stimulated fidelity and flexibility for information sensing and memory processes is a big step toward next-generation computing systems. Herein, the implementation of optical sensing and synaptic functionalities combined has been demonstrated in an artificial optoelectronic synapse based on a silicon-tin alloyed film. The synaptic device can mimic versatile light-stimulated synaptic neuromorphic functions, including excitatory postsynaptic current (ESPC), paired-pulse facilitation (PPF), short-term plasticity (STP), long-term plasticity (LTP), and learning experience. Furthermore, the mimicry of the human visual system is achieved based on these synaptic neuromorphic functions. In addition, the silicon-tin thin film with increased optical absorption provides photonic memory (PM) function under very low light intensity, showing great potential in light-stimulated neuromorphic applications.

Neuron-like Functionality of a Silicon Optical Transistor

(Invited) Silicon Nanocrystals for Optoelectronic Synaptic Devices

Artificial Neuron Based on Nonlinear Polarization Rotation in a Semiconductor Optical Amplifier

Electroluminescent Synaptic Devices with Logic Functions

Optical Diodes And Transistors On A Silicon Chip

Fully UV Modulated Artificial Synapses with Integrated Sensing, Storage and Computation

Synaptic Silicon-Nanocrystal Phototransistors for Neuromorphic Computing

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

A MoS2-based coplanar neuron transistor for logic applications

Photogated Synaptic Transistors Based on the Heterostructure of 4H-Sic and Organic Semiconductors for Neuromorphic Ultraviolet Vision

AlGaN/GaN-Based Optoelectronic Synaptic Devices for Neuromorphic Computing

Optical Implementation of Neural Learning Algorithms Based on Cross-gain Modulation in a Semiconductor Optical Amplifier

Boolean Computation in Single‐Transistor Neuron

Optically Modulated Nanofluidic Ionic Transistor for Neuromorphic Functions

Photonic Synaptic Device Capable of Optical Memory and Logic Operations

Laser Directly Written Junctionless In-plane-Gate Neuron Thin Film Transistors with AND Logic Function

Programmable Optoelectronic Synaptic Transistors Based on MoS2/Ta2NiS5 Heterojunction for Energy‐Efficient Neuromorphic Optical Operation

Solid-State Oxide-Ion Synaptic Transistor for Neuromorphic Computing

All‐Optical Nonlinear Neuron Based on Metallic Quantum Wells

All-optical logic gate NAND using semiconductor optical amplifiers with simulation

Optically Stimulated Synaptic Devices Based on Silicon-Tin Alloyed Thin Film