Abstract:The development of good-conductivity p-type β-Ga2O3 is crucial for the realization of its devices and applications. In this study, nitrogen-doped p-type β-Ga2O3 films with the characteristics of enhanced conductivity were fabricated through the thermal oxidation of GaN in a N2O atmosphere. To obtain insights into the underlying mechanism of the thermally activated transformation process, additional measurements of the oxidized films were performed at temperatures of 1000, 1050, and 1100 °C. Room-temperature photoluminescence (PL) spectra showed a moderate ultraviolet emission peak at 246 nm, confirming the generation of gallium oxide with a band gap of approximately 5.0 eV. The characteristics of polycrystalline and anisotropic growth were confirmed via normalized X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected-area electron diffraction (SAED) patterns. The amount of incorporated nitrogen was analyzed via secondary ion mass spectrometry (SIMS) to examine the effects of oxidation temperature. Furthermore, the ionization energy of the acceptor in the films oxidized at 1000, 1050, and 1100 °C was calculated and analyzed using temperature-dependent Hall test results. The results indicated that nitrogen doping played a significant role in determining p-type electrical properties. The activation energy of polycrystalline β-Ga2O3, prepared via the thermal oxidation of GaN in the N2O atmosphere, was estimated to be 147.175 kJ·mol−1 using an Arrhenius plot. This value was significantly lower than that obtained via both the dry and wet oxidation of GaN under O2 ambient conditions, thus confirming the higher efficiency of the thermal oxidation of GaN in a N2O atmosphere.

Oxidation Study of GaN Using X-Ray Photoemission Spectroscopy

The oxidation of GaN epilayers in dry oxygen

The Oxidation of Gallium Nitride Epilayers in Dry Oxygen

Evolution of Surface-Assisted Oxidation of GaAs (100) by Gas-Phase N2O, NO, and O2 under Near-Ambient Pressure Conditions

Oxidation of GaN: An ab initio thermodynamic approach

Photoemission Study of Sulfur and Oxygen Adsorption on GaN()

Further Characterization of the Polycrystalline p-Type β-Ga2O3 Films Grown through the Thermal Oxidation of GaN at 1000 to 1100 °C in a N2O Atmosphere

Structural Properties of Β-Ga2o3 Formed by Dry Thermal Oxidization Process on GaN

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Photoemission of the Oxidation of Cerium Overlayers on GaSb(110) Surface

Kinetically Versus Thermodynamically Controlled Factors Governing Elementary Pathways of GaP(111) Surface Oxidation

Photoinduced Surface Oxidation of GaN Nanowires Facilitates Hydrogen Evolution

High reactivity of H2O vapor on GaN surfaces

Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C

Strong selective oxidization on two-dimensional GaN: a first principles study.

Study on Oxidation of Gd Film Grown on Ni(110) Surface by Synchrotron Radiation Photoemission

Morphology Dependence Of Interfacial Oxidation States Of Gallium Arsenide Under Near Ambient Conditions

Structural and optical study of irradiation effect in GaN epilayers induced by 308MeV Xe ions

Photon-Assisted Oxidation of the Gaas(100) Surface Using Water at 90 K

Electrical and optical properties of g-GaN/Al 0.5 Ga 0.5 N 2D/3D heterojunction under surface oxidation via first-principles

Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy