Stacking-dependent Electronic Structure of Bilayer Silicene

Huixia Fu,Jin Zhang,Zijing Ding,Hui Li,Sheng Meng
DOI: https://doi.org/10.1063/1.4870534
IF: 4
2014-01-01
Applied Physics Letters
Abstract:Bilayer silicene (BLS) is a class of material that possibly holds both topological and superconducting properties; however, its structure is not fully understood. By scanning stacking modes and lattice constants using first principles calculations, several meta-stable configurations are identified, including a slightly faulted-AA packing structure, named slide-2AA. Different from the metallic properties of conventional AA and AB stacking forms, band structure of slide-2AA bilayer presents a sizeable indirect energy gap of ∼1.16 eV. A metal-semiconductor phase transition along the sliding pathway with a small energy barrier is also observed, indicating its electronic properties can be easily tuned by applying small shear force along the BLS surface plane. Such unique quantitative relationship of structure and electronic properties has profound implications in nanoelectronics and electromechanical devices.
What problem does this paper attempt to address?