Abstract:Charge-sensitive infrared phototransistors (CSIPs) with a 16×4 μm2 active area, which are fabricated in a GaAs/AlGaAs double-quantum-well structure, are studied with an all-cryogenic spectrometer operated at 4.2 K. Extremely low level of background radiation makes reliable determination of detector characteristics at 4.2 K possible: The detection band is found to be centered at the wavelength λ=14.7 μm with a bandwidth (full width at maximum) Δλ=1 μm. The quantum efficiency (η), the current responsivity (R), the noise equivalent power (NEP), and the specific detectivity (D∗) are derived to be η=(2±0.5)%, R=4×104–4×106 A/W, NEP≅6.8×10−19 W/Hz1/2, and D∗≅1.2×1015 cm Hz1/2/W. The dynamic range of detection is demonstrated to exceed 106 (approximately attowatts to picowatts), but the upper limit of the radiation power is limited by the radiation source intensity. The intrinsic dynamic range of the detector is suggested to reach 1013 (approximately attowatts to microwatts). The detection speed is suggested to be around 3 ns (300 MHz). The sensitivity of CSIPS is so high that single-photon signals are discerned in the photocurrent as stepwise increases in given amplitude. The value of D∗ is by a few orders of magnitude higher than that of the state-of-the-art multi-quantum-well infrared photodetectors. The extremely high sensitivity will open up the possibility of developing ultrahigh-speed imaging and/or ultrahigh-resolution passive microscopy system in the long wavelength infrared region.

A Modified Scheme of Charge Sensitive Infrared Phototransistor

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Dual-color charge-sensitive infrared phototransistors with dynamic optical gate

A Sensitive Double Quantum Well Infrared Phototransistor

Highly Photoresponsive Charge-Sensitive Infrared Phototransistors With A Dynamically Controlled Optical Gate

Infrared Phototransistor Using Capacitively Coupled Two-Dimensional Electron Gas Layers

Linear array of charge sensitive infrared phototransistors for long wavelength infrared detection

Charge-sensitive Infrared Phototransistors: Characterization by an All-Cryogenic Spectrometer

Reset Operation of Quantum-Well Infrared Phototransistors

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

A Low Dark Current InGaAs/GaAs Very-Long-wavelength Quantum Well Infrared Photodetector

Effect of Tunable Dot Charging on Photoresponse Spectra of GaAs P-I-n Diode with InAs Quantum Dots

Highly Sensitive Midinfrared Phototransistor

Photoelectric properties of two-color GaAs/GaAlAs quantum well infrared photodetectors

A New Resonant Tunnelling Structure of Integrated Ingaas/Gaas Very-Long-Wavelength Quantumwell Infrared Photodetector

Improving the CSIP Performance

Temperature Dependence of Novel Single-Photon Detectors in the Long-Wavelength Infrared Range

Photocurrents of 14 Μm Quantum-Well Infrared Photodetectors

Charge Sampling Photodetector Based on Van Der Waals Heterostructures

Charge-transport Interfacial Modification Enhanced Ultraviolet (Uv)/near-Uv Phototransistor with High Sensitivity and Fast Response Speed

Metal Hole Arrays As Resonant Photo-Coupler for Charge Sensitive Infrared Phototransistors