Linear array of charge sensitive infrared phototransistors for long wavelength infrared detection
Hengliang Wang,Yidi Zhu,Shenyang Huang,Lijian Zhang,Liping Zhu,Hongtao Xu,Pingping Chen,Wei Lu,Zhenghua An
DOI: https://doi.org/10.1063/5.0007724
IF: 4
2020-06-08
Applied Physics Letters
Abstract:Infrared has been deeply involved in frontier research, modern technologies, and human society, which requires sensitive infrared detection and sensing, in particular, array imaging. A charge-sensitive infrared phototransistor (CSIP) device is made of a GaAs/AlGaAs double quantum well and has been shown to exhibit much larger infrared photoresponsivity than conventional infrared photodetectors, attributable to its built-in amplification mechanism of large transconductance. In this work, we propose and demonstrate a linear array architecture of long wavelength CSIPs with each pixel directly addressable via its reset gate. The performance of a prototype 1 × 8 linear array of CSIPs is studied at 5 K, and each pixel shows a large photoresponsivity of > 50 A / W at the peak wavelength of λ = 11 μ m, nearly two orders higher than conventional detectors. Using a home-made multi-channel pulse generator, the array is operated at a typical frame rate of ∼ 5 ms, without the necessity of using cryogenic readout circuits. Besides, the fabrication of the proposed CSIP array requires only state-of-the-art planar technology; our work, therefore, provides a promising solution to realize very sensitive and small-scale array infrared imaging for sensitive long-wavelength infrared applications.
physics, applied