Enhanced performance of ultraviolet photodetector based on amorphous Ga2O3 films through formation of heterojunction with ZnO nanoparticles
Wei Mi,Liyuan Luo,Lin’an He,Di Wang,Liwei Zhou,Yan Zhu,Longfei Xiao,Mingsheng Xu,Xingcheng Zhang,Dongdong Qi,Chongbiao Luan,Jinshi Zhao
DOI: https://doi.org/10.1016/j.mssp.2024.108174
IF: 4.1
2024-04-01
Materials Science in Semiconductor Processing
Abstract:The responsivity of ultraviolet detector based on amorphous Ga2O3 has been significantly improved through the formation of heterojunction with ZnO nanoparticles (NPs). For the ultraviolet light of 254 nm, an enhanced responsivity of 47.8 A/W has been achieved with a photo-to-dark current ratio exceeding 104. It is worth noting that the obtained heterojunction device exhibits a low dark current less than 2.1 × 10−10 A at 10 V, which is about 527 times lower than that of the amorphous Ga2O3 device. The rise and decay time of the heterojunction device are 0.80 s/0.81 s and 0.16 s/1.54 s, respectively. The band alignment of the heterojunction between the amorphous Ga2O3 and ZnO NPs has been also studied in detail. The obtained results provide a cost-effective method for deep ultraviolet detection. The results demonstrate the effectiveness of a-Ga2O3/ZnO NPs heterojunction in enhancing the device performance and underscore the viability of cost-effective amorphous Ga2O3 in the fabrication of solar-blind photodetectors.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied