Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Quantum Efficiency Of Zno Nanowire Nanolasers

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Largely Enhanced Efficiency In Zno Nanowire/P-Polymer Hybridized Inorganic/Organic Ultraviolet Light-Emitting Diode By Piezo-Phototronic Effect

Aligned growth of ZnO nanowires and lasing in single ZnO nanowire optical cavities

PHOTOLUMINESCENCE EMITTING PROPERTIES OF SINGLE ZnO NANOWIRE STUDIED BY SCANNING NEAR-FIELD OPTICAL MICROSCOPE

An Evanescent Coupling Approach for Optical Characterization of ZnO Nanowires

Photoluminescence and Low-Threshold Lasing of ZnO Nanorod Arrays.

Photoluminescence and Lasing Properties of Catalyst-Free ZnO Nanorod Arrays Fabricated by Pulsed Laser Deposition

Non-Linear Optical Properties of Zinc Oxide Nanowires

Synthesis of ZnO Nanowires by Nanoparticle-Assisted Pulsed-Laser Deposition and Optical Characteristics of Single ZnO Nanowire

High‐Density, Ordered Ultraviolet Light‐Emitting ZnO Nanowire Arrays

Pulsed-Laser Treatment of Solution-Grown Zno Nanowires in Nitrogen: Enhancing in Electrical Conduction and Field Emission

Spatially Confined Light Output of A Crystalline Zinc Oxide Nanonet Laser

Multiphoton Route to ZnO Nanowire Lasers

High Performance Plasmonic Nanolasers with External Quantum Efficiency Exceeding 10%

Optical Properties of Zno Nanowires Grown by Thermal Evaporation

Optical and Excitonic Properties of Crystalline ZnS Nanowires: Toward Efficient Ultraviolet Emission at Room Temperature

Low-threshold Two-Photon Pumped ZnO Nanowire Lasers.

Structural, Photoluminescence, and Field Emission Properties of Vertically Well-Aligned Zno Nanorod Arrays

Near Band Edge Photoluminescence Of Zno Nanowires: Optimization Via Surface Engineering

Aligned growth of ZnO nanowires by NAPLD and their optical characterizations